IXFH24N50Q - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V

VGS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 24N50Q 24 A

26N50Q 26 A

IDM TC= 25°C, Note 1 24N50Q 96 A

26N50Q 104 A

IAR TC= 25°C 24N50Q 24 A

26N50Q 26 A

EAR TC= 25°C 30 mJ

EAS TC= 25°C 1.5 J

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns

TJ≤ 150°C, RG = 2 Ω

PDTC= 25°C 300 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.063 in) from case for 10 s 300 °C

MdMounting torque 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, High dv/dt

Features

zIXYS advanced low Qg process

zInternational standard packages

zLow RDS (on)

zUnclamped Inductive Switching (UIS)

rated

zFast switching

zMolding epoxies meet UL 94 V-0

flammability classification

Advantages

zEasy to mount

zSpace savings

zHigh power density

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDSS VGS = 0 V, ID = 250 µA 500 V

VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS TJ = 25°C25µA

VGS = 0 V TJ = 125°C1mA

RDS(on) VGS = 10 V, ID = 0.5 ID25 24N50Q 0.23 Ω

Note 2 26N50Q 0.20 Ω

DS98512G(03/03)

HiPerFETTM

Power MOSFETs

Q-Class

TO-247 AD (IXFH)

(TAB)

G = Gate, D = Drain,

S = Source, TAB = Drain

TO-268 (D3) (IXFT) Case Style

(TAB)

G

S

VDSS ID25 RDS(on)

IXFH/IXFT 24N50Q 500 V 24 A 0.23 ΩΩ

ΩΩ

Ω

IXFH/IXFT 26N50Q 500 V 26 A 0.20 ΩΩ

ΩΩ

Ω

trr ≤ ≤

≤ ≤

≤ 250 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

gfs VDS = 10 V; ID = 0.5 • ID25, Note 2 14 24 S

Ciss 3900 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 500 pF

Crss 130 pF

td(on) 28 ns

trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 ns

td(off) RG = 2 Ω (External), 55 ns

tf16 ns

Qg(on) 95 nC

Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 nC

Qgd 40 nC

RthJC 0.42 K/W

RthCK (TO-247) 0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISVGS = 0 V 24N50Q 24 A

26N50Q 26 A

ISM Repetitive; Note1 24N50Q 96 A

26N50Q 104 A

VSD IF = IS, VGS = 0 V, 1.3 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr 250 ns

QRM IF = IS, -di/dt = 100 A/ µs, VR = 100 V 0.85 µC

IRM 8A

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1 2 3

Min Recommended Footprint

TO-268 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

A12.7 2.9 .106 .114

A2.02 .25 .001 .010

b 1.15 1.45 .045 .057

b21.9 2.1 .75 .83

C .4 .65 .016 .026

D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

E113.3 13.6 .524 .535

e 5.45 BSC .215 BSC

H 18.70 19.10 .736 .752

L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC

L4 3.80 4.10 .150 .161

Note 1. Pulse width limited by TJM

2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXFH 24N50Q IXFT 24N50Q

IXFH 26N50Q IXFT 26N50Q

TC - Degrees C

-50 -25 0 25 50 75 100 125 150

ID - Amperes

0

5

10

15

20

25

30

VGS - Volts

02468

ID - Amperes

0

10

20

30

40

50

TJ - Degrees C

25 50 75 100 125 150

RDS(ON) - Normalized

0.8

1.2

1.6

2.0

2.4

ID = 13A

VDS - Volts

0 4 8 121620

ID - Amperes

0

10

20

30

40

50

VDS - Volts

0 4 8 12 16 20

ID - Amperes

0

10

20

30

40

50

60

5V

TJ = 125OC

VGS = 10V

TJ = 25OC

6V

5V

6V

VGS=10V

9V

8V

7V

VGS=10V

9V

8V

7V

ID = 26A

TJ = 25oC

ID - Amperes

0 102030405060

RDS(ON) - Normalized

0.8

1.2

1.6

2.0

2.4

2.8

TJ = 125oC

VGS = 10V

TJ = 125oC

IXF_26N50Q

TJ = 25oC

IXF_24N50Q

Fig.1 Output Characteristics @ Tj = 25°C Fig.2 Output Characteristics @ Tj = 125°C

Fig.3 RDS(on) vs. Drain Current Fig.4 Temperature Dependence of Drain

to Source Resistance

Fig.5 Drain Current vs. Case Temperature Fig.6 Drain Current vs Gate Source Voltage

IXFH 24N50Q IXFT 24N50Q

IXFH 26N50Q IXFT 26N50Q

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

VSD - Volts

0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID - Amperes

0

5

10

15

20

25

30

35

40

45

50

Pulse Width - Seconds

10-5 10-4 10-3 10-2 10-1 100101

R(th)JC - K/W

0.00

0.01

0.10

1.00

VDS - Volts

0 5 10 15 20 25 30 35 40

Capacitance - pF

100

1000

10000

Gate Charge - nC

0 20406080100120

VGS - Volts

0

2

4

6

8

10

12

Crss

Coss

Ciss

VDS = 250 V

ID = 13 A

IG = 10 mA

f = 1MHz

TJ = 125OC

Single Pulse

D=0.01

D=0.02

D=0.05

D=0.1

D=0.2

D=0.5

TJ = 25OC

Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves

Fig.9 Drain Current vs Drain to Source Voltage

Fig.10 Transient Thermal Impedance

IXFH 24N50Q IXFT 24N50Q

IXFH 26N50Q IXFT 26N50Q