1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
30
2N3903, 2N3904 Switching Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Version 2004-01-20
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
2N3903, 2N3904
Collector-Emitter-voltage B open VCE0 40 V
Collector-Base-voltage E open VCE0 60 V
Emitter-Base-voltage C open VEB0 6 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) IC600 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 55…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA VCEsat
VCEsat
–
––
–200 mV
300 mV
Base saturation voltage – Basis-Sättigungsspannung
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA VBEsat
VBEsat
–
––
–850 mV
950 mV
Collector cutoff current – Kollektorreststrom
VCE = 30 V, VEB = 3 V ICEV – – 50 nA
Emitter cutoff current – Emitterreststrom
VCE = 30 V, VEB = 3 V IEBV – – 50 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 31
General Purpose Transistors 2N3903, 2N3904
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 0.1 mA 2N3903
2N3904 hFE
hFE
20
40 –
––
–
VCE = 1 V, IC = 1 mA 2N3903
2N3904 hFE
hFE
35
70 –
––
–
VCE = 1 V, IC = 10 mA 2N3903
2N3904 hFE
hFE
50
100 –
–150
300
VCE = 1 V, IC = 50 mA 2N3903
2N3904 hFE
hFE
30
60 –
––
–
VCE = 1 V, IC = 510 mA 2N3903
2N3904 hFE
hFE
15
30 –
––
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 10 mA,
f = 100 MHz 2N3903
2N3904 fT
fT
250 MHz
300 MHz –
––
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 100 kHz CCB0 – – 4 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 100 kHz CEB0 – – 8 pF
Noise figure – Rauschzahl
VCE = 5 V, IC = 100 :A
RG = 1 kS f = 10 Hz ...15.7 kHz 2N3903
2N3904 F
F–
––
–6 dB
5 dB
Switching times – Schaltzeiten
turn-on time ICon = 10 mA,
IBon = - IBoff = 1 mA ton ––70
turn-off time toff – – 250
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren 2N3905, 2N3906
