MCT2, MCT2E OPTOCOUPLERS SOES023 - MARCH 1983 - REVISED OCTOBER 1995 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS D D D D D D D Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio Base Lead Provided for Conventional Transistor Biasing High-Voltage Electrical Isolation . . . 1.5-kV, or 3.55-kV Rating Plastic Dual-In-Line Package High-Speed Switching: tr = 5 s, tf = 5 s Typical Designed to be Interchangeable with General Instruments MCT2 and MCT2E MCT2 OR MCT2E . . . PACKAGE (TOP VIEW) ANODE CATHODE NC 1 6 2 5 3 4 BASE COLLECTOR EMITTER NC - No internal connection absolute maximum ratings at 25C free-air temperature (unless otherwise noted) Input-to-output voltage: MCT2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV MCT2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 kV Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V Input-diode continuous forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA Input-diode peak forward current (tw 1 ns, PRF 300 Hz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Continuous power dissipation at (or below) 25C free-air temperature: Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW Phototransistor (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW Total, infrared-emitting diode plus phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 100C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. This value applies when the base-emitter diode is open-circulated. 2. Derate linearly to 100 C free-air temperature at the rate of 2.67 mW/C. 3. Derate linearly to 100 C free-air temperature at the rate of 3.33 mW/C. Copyright 1995, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 MCT2, MCT2E OPTOCOUPLERS SOES023 - MARCH 1983 - REVISED OCTOBER 1995 electrical characteristics at 25C free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS V 30 V IE = 100 A, VR = 3 V IB = 0, IF = 0 7 V Phototransistor operation VCE = 10 V, IB = 0, IF = 10 mA Photodiode operation VCB = 10 V, IE = 0, IF = 10 mA Phototransistor operation VCE = 10 V, IB = 0, IF = 0 1 50 nA Photodiode operation VCB = 10 V, IE = 0, IF = 0 0.1 20 nA VCE = 5 V, IC = 100 A, A IF = 0 MCT2 1.25 1.5 V 0.25 4 V Collector-emitter breakdown voltage Input diode static reverse current Off-state collector current UNIT 70 Emitter-collector breakdown voltage IC(off) MAX IF = 0 IF = 0 V(BRECO) IR On-state collector current TYP IE = 0, IB = 0, Collector-base breakdown voltage IC(on) MIN IC = 10 A, IC =1 mA, V(BR)CBO V(BR)CEO HFE Transistor static forward current transfer ratio VF VCE(sat) Input diode static forward voltage rIO Input-to-output internal resistance Cio Input-to-output capacitance Collector-emitter saturation voltage 10 MCT2E 2 Vin-out = 0, See Note 4 5 mA 20 A 250 100 IF = 20 mA IC = 2 mA, IB = 0, IF = 16 mA Vin-out = 1.5 kV for MCT2, 3.55 kV for MCT2E, See Note 4 A 300 1011 f = 1 MHz, 1 pF NOTE 4: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together. switching characteristics PARAMETER tr tf Rise time tr tf Rise time 2 Fall time Fall time TEST CONDITIONS MIN TYP MAX UNIT Phototransistor operation VCC = 10 V,, RL = 100 , IC(on) = 2 mA,, See Test Circuit A of Figure 1 5 s Photodiode operation VCC = 10 V, RL = 1 k, IC(on) 20 A, See Test Circuit B of Figure 1 1 s POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 MCT2, MCT2E OPTOCOUPLERS SOES023 - MARCH 1983 - REVISED OCTOBER 1995 PARAMETER MEASUREMENT INFORMATION 47 + - VCC = 10 V 47 Input Input 0V Output (see Note B) RL = 100 Input tr tf Output 90% 10% 10% + - TEST CIRCUIT A PHOTOTRANSISTOR OPERATION Output (see Note B) 90% VOLTAGE WAVEFORMS VCC = 10 V RL = 1 k TEST CIRCUIT B PHOTODIODE OPERATION NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZO = 50 , tr 15 ns, duty cycle 1%, tw = 100 s. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr 12 ns, Rin 1 M, Cin 20 pF. Figure 1. Switching Times POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 MCT2, MCT2E OPTOCOUPLERS SOES023 - MARCH 1983 - REVISED OCTOBER 1995 TYPICAL CHARACTERISTICS COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT vs INPUT-DIODE FORWARD CURRENT 60 100 IB = 0 TA = 25C See Note A 50 I C - Collector Current - mA I C - Collector Current - mA 40 VCE = 10 V IB = 0 TA = 25C 10 4 1 0.4 0.1 40 Max Continuous Power Dissipation 30 IF = 40 mA 20 IF = 30 mA IF = 20 mA 10 0.04 0.01 0.1 IF = 20 mA 0 0.4 1 4 10 40 IF - Input-Diode Forward Current - mA 100 0 2 4 6 8 10 12 14 16 18 20 VCE - Collector-Emitter Voltage - V NOTE A: Pulse operation of input diode is required for operation beyond limits shown by dotted lines. Figure 3 Figure 2 ON-STATE COLLECTOR CURRENT (RELATIVE TO VALUE AT 25C) vs FREE-AIR TEMPERATURE 1.6 VCE = 0.4 V to 10 V IB = 0 IF = 10 mA See Note B On-State Collector Current (Relative to Value at TA = 25 C) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 - 75 - 50 - 25 0 25 50 75 100 125 TA - Free-Air Temperature - C NOTE B: These parameters were measured using pulse techniques, tw = 1 ms, duty cycle 2 %. Figure 4 4 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 MCT2, MCT2E OPTOCOUPLERS SOES023 - MARCH 1983 - REVISED OCTOBER 1995 MECHANICAL INFORMATION The package consists of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The case can withstand soldering temperature with no deformation and device performance characteristics remain stable when operated in high-humidity conditions. Unit weight is approximately 0.52 grams. 9,40 (0.370) 8,38 (0.330) C L C L 7,62 (0.300) T.P. 6 5 4 6,61 (0.260) 6,09 (0.240) 5,46 (0.215) 2,92 (0.115) 1,78 (0.070) 0,51 (0.020) Index Dot (see Note B) 1 2 3 (see Note C) 105 90 1,78 (0.070) MAX 6 Places Seating Plane 0,305 (0.012) 0,203 (0.008) 1,01 (0.040) MIN 3,81 (0.150) 3,17 (0.125) 2,29 (0.090) 1,27 (0.050) 2,54 (0.100) T.P. (see Note A) 0,534 (0.021) 0,381 (0.015) 6 Places NOTES: A. Leads are within 0,13 (0.005) radius of true position (T.P.) with maximum material condition and unit installed. B. Pin 1 identified by index dot. C. Terminal connections: 1. Anode (part of the infrared-emitting diode) 2. Cathode (part of the infrared-emitting diode) 3. No internal connection 4. Emitter (part of the phototransistor) 5. Collector (part of the phototransistor) 6. Base (part of the phototransistor) D. The dimensions given fall within JEDEC MO-001 AM dimensions. E. All linear dimensions are given in millimeters and parenthetically given in inches. Figure 5. Mechanical Information POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 PACKAGE OPTION ADDENDUM www.ti.com 8-Apr-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty MCT2 OBSOLETE PDIP N 6 TBD Call TI Call TI MCT2E OBSOLETE PDIP N 6 TBD Call TI Call TI Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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