MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCT OBER 1995
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
D
Gallium Arsenide Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
D
High Direct-Current Transfer Ratio
D
Base Lead Provided for Conventional
Transistor Biasing
D
High-Voltage Electrical Isolation . . .
1.5-kV, or 3.55-kV Rating
D
Plastic Dual-In-Line Package
D
High-Speed Switching:
tr = 5 µs, tf = 5 µs Typical
D
Designed to be Interchangeable with
General Instruments MCT2 and MCT2E
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†
Input-to-output voltage: MCT2 ± 1.5 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCT2E ± 3.55 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-base voltage 70 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 1) 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-collector voltage 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-base voltage 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode reverse voltage 3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode continuous forward current 60 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode peak forward current (tw ≤ 1 ns, PRF ≤300 Hz) 3 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) 200 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 2) 200 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total, infrared-emitting diode plus phototransistor (see Note 3) 250 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA –55°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –55°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100 °C free-air temperature at the rate of 2.67 mW/°C.
3. Derate linearly to 100 °C free-air temperature at the rate of 3.33 mW/°C.
Copyright 1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
6
5
4
ANODE
CATHODE
NC
BASE
COLLECTOR
EMITTER
MCT2 OR MCT2E ...PACKAGE
(TOP VIEW)
NC – No internal connection
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CBO Collector-base breakdown voltage IC = 10 µA, IE = 0, IF = 0 70 V
V(BR)CEO Collector-emitter breakdown voltage IC =1 mA, IB = 0, IF = 0 30 V
V(BRECO) Emitter-collector breakdown voltage IE = 100 µA, IB = 0, IF = 0 7 V
IRInput diode static reverse current VR = 3 V 10 µA
I
C(on)
On-state collector current Phototransistor
operation VCE = 10 V, IB = 0, IF = 10 mA 2 5 mA
C(on)
Photodiode operation VCB = 10 V, IE = 0, IF = 10 mA 20 µA
I
C(off)
Off-state collector current Phototransistor
operation VCE = 10 V, IB = 0, IF = 0 1 50 nA
C(off)
Photodiode operation VCB = 10 V, IE = 0, IF = 0 0.1 20 nA
HFE
Transistor static forward current transfer ratio
VCE = 5 V,
IC100 µA
MCT2 250
H
FE
Transistor
static
forward
current
transfer
ratio
I
C =
100
µ
A
,
IF = 0 MCT2E 100 300
VFInput diode static forward voltage IF = 20 mA 1.25 1.5 V
VCE(sat) Collector-emitter saturation voltage IC = 2 mA, IB = 0, IF = 16 mA 0.25 4 V
rIO Input-to-output internal resistance Vin-out = ±1.5 kV for MCT2,
±3.55 kV for MCT2E,
See Note 4 1011 Ω
Cio Input-to-output capacitance Vin-out = 0,
See Note 4 f = 1 MHz, 1 pF
NOTE 4: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together.
switching characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
trRise time
Phototransistor o
p
eration
V
CC
= 10 V, I
C(on)
= 2 mA,
5
µs
tfFall time
Phototransistor
operation
CC ,
RL = 100 Ω,
C(on) ,
See Test Circuit A of Figure 1
5
µ
s
trRise time
Photodiode o
p
eration
VCC = 10 V, IC
(
on
)
20 µA,
1
µs
tfFall time
Photodiode
operation
CC
RL = 1 kΩ,
C(on) µ
See Test Circuit B of Figure 1
1
µ
s
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT A
PHOTOTRANSISTOR OPERATION
+
–VCC = 10 V
Input
Output
(see Note B)
RL = 100 Ω
47 Ω
+
–VCC = 10 V
Input
Output
(see Note B)
RL = 1 kΩ
47 Ω
trtf
90%
10%
90%
10%
Output
Input
0 V
TEST CIRCUIT B
PHOTODIODE OPERATION
VOLTAGE WAVEFORMS
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZO = 50 Ω, tr ≤ 15 ns, duty cycle
1%,
tw = 100 µs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ≤ 12 ns, Rin ≥ 1 MΩ, Cin ≤ 20 pF.
Figure 1. Switching Times
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.04
0.01
0.1
0.1 0.4 1 4 10 40 100
– Collector Current – mA
COLLECTOR CURRENT
vs
INPUT-DIODE FORWARD CURRENT
0.4
1
4
10
40
100
IC
IF – Input-Diode Forward Current – mA
VCE = 10 V
IB = 0
TA = 25°C
Figure 2 Figure 3
30
20
10
00 2 4 6 8 10 12
40
50
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE
60
14 16 18 20
– Collector Current – mA
IC
VCE – Collector-Emitter Voltage – V
Max Continuous
Power Dissipation
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 20 mA
IB = 0
TA = 25°C
See Note A
NOTE A: Pulse operation of input diode is required for operation
beyond limits shown by dotted lines.
0.8
0.4
0.2
0
1.2
1.4
1.6
1
0.6
–75 –50 –25 0 25 50 75 100 125
TA – Free-Air Temperature – °C
VCE = 0.4 V to 10 V
IB = 0
IF = 10 mA
See Note B
NOTE B: These parameters were measured using pulse
techniques, tw = 1 ms, duty cycle ≤ 2 %.
ON-STATE COLLECTOR CURRENT
(RELATIVE TO VALUE AT 25°C)
vs
FREE-AIR TEMPERATURE
(Relative to Value at
On-State Collector Current
A°= 25 C)T
Figure 4
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL INFORMATION
The package consists of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor mounted
on a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The case can withstand
soldering temperature with no deformation and device performance characteristics remain stable when
operated in high-humidity conditions. Unit weight is approximately 0.52 grams.
CL
C
0,534 (0.021)
0,381 (0.015)
6 Places
Seating Plane
L7,62 (0.300) T.P.
6,61 (0.260)
6,09 (0.240)
0,305 (0.012)
0,203 (0.008) 3,81 (0.150)
3,17 (0.125)
5,46 (0.215)
2,92 (0.1 15)
1,78 (0.070)
0,51 (0.020)
2,29 (0.090)
1,27 (0.050)
2,54 (0.100) T.P.
(see Note A)
1,01 (0.040) MIN
1,78 (0.070) MAX
6 Places
9,40 (0.370)
8,38 (0.330)
Index Dot
(see Note B)
105°
90°
1 2 3
6 5 4
(see Note C)
NOTES: A. Leads are within 0,13 (0.005) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. Terminal connections:
1. Anode (part of the infrared-emitting diode)
2. Cathode (part of the infrared-emitting diode)
3. No internal connection
4. Emitter (part of the phototransistor)
5. Collector (part of the phototransistor)
6. Base (part of the phototransistor)
D. The dimensions given fall within JEDEC MO-001 AM dimensions.
E. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 5. Mechanical Information
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
MCT2 OBSOLETE PDIP N 6 TBD Call TI Call TI
MCT2E OBSOLETE PDIP N 6 TBD Call TI Call TI
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 8-Apr-2005
Addendum-Page 1
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,
enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or service without notice. Customers should obtain the latest relevant information before placing
orders and should verify that such information is current and complete. All products are sold subject to TI’ s terms
and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using TI components. To minimize the risks associated with customer products
and applications, customers should provide adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,
copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process
in which TI products or services are used. Information published by TI regarding third-party products or services
does not constitute a license from TI to use such products or services or a warranty or endorsement thereof.
Use of such information may require a license from a third party under the patents or other intellectual property
of the third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of information in TI data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for
such altered documentation.
Resale of T I products or services with statements different from or beyond the parameters stated by TI for that
product or service voids all express and any implied warranties for the associated TI product or service and
is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.
Following are URLs where you can obtain information on other Texas Instruments products and application
solutions:
Products Applications
Amplifiers amplifier.ti.com Audio www.ti.com/audio
Data Converters dataconverter.ti.com Automotive www.ti.com/automotive
DSP dsp.ti.com Broadband www.ti.com/broadband
Interface interface.ti.com Digital Control www.ti.com/digitalcontrol
Logic logic.ti.com Military www.ti.com/military
Power Mgmt power.ti.com Optical Networking www.ti.com/opticalnetwork
Microcontrollers microcontroller.ti.com Security www.ti.com/security
Telephony www.ti.com/telephony
Video & Imaging www.ti.com/video
Wireless www.ti.com/wireless
Mailing Address: Texas Instruments
Post Office Box 655303 Dallas, Texas 75265
Copyright 2005, Texas Instruments Incorporated
