Advanced Power MOSFET IRLS30A FEATURES -?--f-f Oo Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10uA (Max.) @ Vps = 100V Lower Ropgjon): 0.1012 (Typ.) Absolute Maximum Ratings lp = 14A TO-220 Ta 1.Gate 2. Drain 3. Source Symbol Characteristic Value Units Voss Drain-to-Source Voltage 100 Vv lo Continuous Drain Current (T.=25C) 14 A Continuous Drain Current (T.=100C) 9.9 lom Drain Current-Pulsed (1) 49 A Ves Gate-to-Source Voltage +20 Vv Eas Single Pulsed Avalanche Energy (2) 261 mJ lar Avalanche Current (1) 14 A Ear Repetitive Avalanche Energy (1) 6.2 mJ dv/dt Peak Diode Recovery dv/dt (3) 6.5 V/ns Total Power Dissipation (T.=25C) 62 W Po Linear Derating Factor 0.41 w/c Operating Junction and Ty, Tste -55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering C TL Purposes, 1/8. from case for 5-seconds 300 Thermal Resistance Symbol Characteristic Typ. Max. Units Rosc Junction-to-Case -- 2.41 Recs Case-to-Sink 0.5 -- C/W Roya Junction-to-Ambient -- 62.5 Rev. B FAIRCHILD ee SEMICONDUCTOR 1999 Fairchild Semiconductor CorporationIRLS30A N-CHANNEL POWER MOSFET Electrical Characteristics (T,=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max. Units Test Condition BVpss_| Drain-Source Breakdown Voltage | 100| -- -- Ve] Ves=0V,Ip=250nA ABV/AT, | Breakdown Voltage Temp. Coeff. | -- | 0.1 | -- | V/C] lp=250nA See Fig 7 Vasith) | Gate Threshold Voltage 10] - | 20] V_ | Vps=5V,|p=250nA | Gate-Source Leakage , Forward -- --_| 100 nA Vgg=20V ss Gate-Source Leakage, Reverse -- -- |-100 Vas=-20V -- -- 10 Vps=100V loss Drain-to-Source Leakage Current _ ~ 400 LA Vae=80V, To=150C R Static Drain-Source Voce SV [ce7A 4 son)! On-State Resistance ~ p> [012 os Ots Forward Transconductance - [10.2] -- Vps=40V, Ip=7A (4) Ciss Input Capacitance - | 580 | 755 . Vas=0V,Vps=25V, Ff =1 MHz Coss | Output Capacitance ~ [1401175] pF ; - See Fig 5 Crss Reverse Transfer Capacitance - | 60 |] 75 t Turn-On Delay Time - | 10 | 30 era y Vpp=50V,Ip=14A, t, Rise Time - | 11 | 30 , ns | Rg=6Q tuotp | Turn-Off Delay Time - | 29 | 70 ; ; See Fig 13 (4) (5) t Fall Time - | 15 | 40 Q, Total Gate Charge - 116.9] 24 Vps=80V,Ves=5V, Qos Gate-Source Charge - | 2.7] - | ne | ip=14A Qga Gate-Drain (. Miller. ) Charge - | 9.7 -- See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max.| Units Test Condition Ig Continuous Source Current -- -- 14 A Integral reverse pn-diode Ism Pulsed-Source Current (1) | -- -- | 49 in the MOSFET Vsp Diode Forward Voltage (4) |] -- ~- | 15 | V_ | 1) =25C, lo=14A,Vec=0V ter Reverse Recovery Time -- [109] -- ns | Ty=25C,|-=14A Qi Reverse Recovery Charge - [0.41] -- uC | di-/dt=100A/us (4) Notes; 1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2) L=2mH, |,g=14A, Vpp=25V, Rg=27Q, Starting T,=25C 4) Pulse Test: Pulse Width = 250us, Duty Cycle < 2% ( ( (3) Isp <14A, di/dt < 350A/us, Vpp< BVpgg, Starting T,=25C ( ( 5) Essentially Independent of Operating Temperature ee FAIRCHILD Ed SEMICONDUCTORN-CHANNEL POWER MOSFET IRLS30A Fig 1. Output Characteristics I, , Drain Current [A] Fig 2. Transfer Characteristics Ree + [2] @ Nebes : . 1. Vg =OV 2.%,=0V . ps Pulse 2.7, =25C - 3. 250 1s Pulse Test 1 1 10 1? 10- 6 8 10 V, Drain-Source Voltage hA Vos 1 Gate-Sounce Voltage fv] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 0.20 : : : 2 i aa | | 10 | ~ - : arb : fi IBC: : : : 1. y, =0V | 25% | ne 2, 20s Bilse Test ~ 0.00 \ i 1 i 1 i 1 wmihil i isi ti iii, 0 5 a 5 @ 04 06 O08 10 12 14 16 #18 20 22 I, Drain Grrent [A] Va 1 Somoe-Drain Veltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage Gas Get Ga (Gs= shembad ) PRO aguas 6b gol. Cy. i Gras Ga Be Lo. i | . T 8 @Nttes : 1, =A 0 1 1 1 1 1 1 0 3 6 9 rR 5b 18 ee FAIRCHILD Ed SEMICONDUCTORIRL530A POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 1.2 3.0 Ww pf tinier < 3 ~ = BBP bovee eee Mg ee scececbascee es esas sadescececcecneescaf sce eceeesenas oe" *s m "Ss wy : = tts os ob oe oF 10m sa, Ta | : ~ @ Netes : a . : Ho F msec He : 3k eee 2. T, =15 C : : 3, Single Pulse : : : aot 0 i i i i i ie 19 ig 25 Es) B 100 15 150 15 V,, 7 Drain-Source Voltage [V] T,, Case Temperature [c] Fig 11. Thermal Response 0 n . g 0 L e -D=0.5 a 10 ~ = d c a @ Notes : : : : : fi 0, 2eert - . . : _ - . Sof. & C _ 1. Z.. (t)=2.41 C/W Max. rey . ne toa : ase | if 2 0 GY 2, Duty Factor, D=t//t, ay L sl 0 oo : 3. To Pon Soc fe ~ 10* Fo oT, 7 o Fl rt 3 fae efi R single pulse t, o| n* o 10 10-4 10 10? 1077 10 107 t, , Square Wave Pulse Duration [sec] ee FAIRCHILD SEMICONDUCTORPOWER MOSFET IRL530A Fig 12. Gate Charge Test Circuit & Waveform . Current Regulator . 12V T 7 1OV = Vos Vos ct DUT L 3mA t R, R, oO WV W- Charge urrent Sampling (Ig) |Current Sampling (Ip) Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms out Vin : a 10V seh siete ton loge Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L BVpss L Eas= 7 Ly las SO Vos > LHP - BVpgs -- Vpp Vary t, to obtain os Ip BVpss | - - - - required peak I, ro Ing | - - - - ) Cc = Vop Ip (t) DUT Vop Vos (t) 5V j~<_ +, | Time ee FAIRCHILD SEMICONDUCTORIRL530A POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT | + ( | : *) Vos l {- Is Q So L Driver Vas $ T R El Same Type co 4) as DUT IF Vop Vos dv/dt controlled by . Rg. I, controlled by Duty Factor . D. ce] Vv D- Gate Pulse Width (D GS ) ~ Gate Pulse Period 10V river | Ipqm, Body Diode Forward Current S tol XO RM Body Diode Reverse Current Vos (DUT ) Body Diode Recovery dv/dt Ve Vop \ 4 f tT Body Diode Forward Voltage Drop ee FAIRCHILD Ed SEMICONDUCTORTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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