Issue 1 - April 2008 1
© Zetex Semiconductors plc 2008 www.zetex.com
ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive
• SO8 package
Applications
• DC-DC Converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device marking
ZXMN6A25
V(BR)DSS RDS(on) (Ω) ID(A)
0.050 @ VGS=10V 7.0 60
0.070 @ VGS=4.5V
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A25N8TA 7 12 500
D
S
G
DS
S
S
G
Top view
D
D
D
ZXMN6A25N8
Issue 1 - April 2008 2
© Zetex Semiconductors plc 2008 www.zetex.com
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-Source voltage VDSS 60 V
Gate-Source voltage VGS ± 20 V
Continuous Drain current @ VGS= 10V; TA=25°C (b)
@ VGS= 10V; TA=70°C (b)
@ VGS= 10V; TA=25°C (a)
@ VGS= 10V; TL=25°C (a)(d)
ID 5.7
4.5
4.3
7.0
A
Pulsed Drain current (c) IDM 25.7 A
Continuous Source current (Body diode) (b) IS 4.1 A
Pulsed Source current (Body diode) (c) ISM 25.7 A
Power dissipation at TA =25°C (a)
Linear derating factor
PD 1.56
12.5
W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor
PD 2.8
22.2
W
mW/°C
Power dissipation at TL =25°C (d)
Linear derating factor
PD 4.14
33.1
W
mW/°C
Operating and storage temperature range Tj, Tstg -55 to 150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient (a) RθJA 80 °C/W
Junction to ambient (b) RθJA 45 °C/W
Junction to lead (d) RθJL 30.2 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A25N8
Issue 1 - April 2008 3
© Zetex Semiconductors plc 2008 www.zetex.com
Thermal characteristics
100m 1 10
1m
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
ID Drain Current (A)
VDS Drain-Source Voltage (V) 0 20406080100120140160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25mm x 25mm
1oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMN6A25N8
Issue 1 - April 2008 4
© Zetex Semiconductors plc 2008 www.zetex.com
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage
V(BR)DSS 60 V
ID =250μA, VGS=0V
Zero gate voltage drain
current
IDSS 1.0 µA
VDS=60V, VGS=0V
Gate-Body leakage IGSS 100 nA
VGS=±20V, VDS=0V
Gate-Source threshold
voltage
VGS(th) 1 3 V
ID=250μA, VDS=VGS
Static Drain-Source
on-state resistance (*)
RDS(on) 0.050
0.070
Ω VGS= 10V, ID= 3.6A
VGS= 4.5V, ID= 3.0A
Forward
Transconductance (*) (†)
gfs 10.2
S VDS= 15V, ID= 4.5A
Dynamic (†)
Input capacitance Ciss 1063 pF
Output capacitance Coss 104 pF
Reverse transfer
capacitance
Crss 64 pF
VDS= 30V, VGS=0V
f=1MHz
Switching (‡) (†)
Turn-on-delay time td(on) 3.8 ns
Rise time tr 4.0 ns
Turn-off delay time td(off) 26.2 ns
Fall time tf 10.6 ns
VDD= 30V, VGS= 10V
ID= 1A
RG ≅ 6.0Ω,
Gate charge Qg 11.0 nC
VDS= 30V, VGS= 5V
ID= 4.5A
Total gate charge Qg 20.4 nC
Gate-Source charge Qgs 4.1 nC
Gate-Drain charge Qgd 5.1 nC
VDS= 30V, VGS= 10V
ID= 4.5A
Source–Drain diode
Diode forward voltage (*) VSD 0.85 0.95 V IS= 5.5A,VGS=0V
Reverse recovery time (‡) trr 22.0 ns
Reverse recovery charge(‡) Qrr 21.4 nC
IS= 2.2A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
ZXMN6A25N8
Issue 1 - April 2008 5
© Zetex Semiconductors plc 2008 www.zetex.com
Typical characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
2345
0.01
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1 1 10
0.01
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
4.5V
10V
4V
3.5V
VGS
2.5V
3V
Output Characteristics
T = 25°C
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
4V
3.5V
3V
2V
4.5V
10V
2.5V
Output Characteristics
T = 150°C
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Drain Current (A)
VGS Gate-Source Voltage (V)
Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID = 4.5A
VGS(th)
VGS = VDS
ID = 250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
4.5V
10V
3V
4V
3.5V
2.5V
On-Resistance v Drain Current
T = 25°C
VGS
RDS(on) Drain-Source On-Resistance (Ω)
ID Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
ZXMN6A25N8
Issue 1 - April 2008 6
© Zetex Semiconductors plc 2008 www.zetex.com
Typical characteristics
0.1 1 10
0
200
400
600
800
1000
1200
1400
1600
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
VDS - Drain - Source Voltage (V)
0 5 10 15 20 25
0
2
4
6
8
10
ID = 4.5A
VDS = 30V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
VGS Gate-Source Voltage (V)
Test circuits
ZXMN6A25N8
Issue 1 - April 2008 7
© Zetex Semiconductors plc 2008 www.zetex.com
Package outline SO8
SO8 Package Information
Inches Millimeters Inches Millimeters DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC
A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51
D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20 U 0° 8° 0° 8°
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50
L 0.016 0.050 0.40 1.27 - - - - -
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
ZXMN6A25N8
Issue 1 - April 2008 8
© Zetex Semiconductors plc 2008 www.zetex.com
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex
with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach
of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these
circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete” Production has been discontinued
Datasheet status key:
“Draft version” This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
Zetex sales offices
Europe
Zetex GmbH
Kustermann-Park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
© 2008 Published by Zetex Semiconductors plc
