SILICONIX INC , 18E D M@@ 6254735 00L442eL b IRFF330/331/332/333 N-Channel Enhancement Mode Transistors SX Siliconix incorporated PRODUCT SUMMARY PART | Visraypss | fpsvo' ip NUMBER ey oO (A) IRFF330 400 1.0 3.5 IRFF331 350 1.0 3.5 IRFF332 400 15 3.0 IRFF333 350 1.56 3.0 T3494 -04% TO-205AF BOTTOM VIEW. 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25C Unless Otherwise Noted) IRFF PARAMETERS/TEST CONDITIONS SYMBOL | 330 331 332 333. | UNITS Drain-Source Voltage. Vos 400 350 400 350 Vv Gate-Source Voltage Ves 20 20 +20 +20 Continuous Drain Current To = 25C Ip 3.5 3.5 3.0 3.0 To = 100C 2.2 2.2 1.9 1.9 A Pulsed Drain Current? lom 14 14 12 12 Avalanche Current (See Figure 9) la. 3.6 3.5 3.0 3.0 Power Dissipation To = 26C Pp 25 25 25 25 WwW To = 100C 10 10 10 10 Operating Junction & Storage Temperature Range | Ty, Tstg -55 to 150 C Lead Temperature ('/,," from case for 10 sec.) Tt 300 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Rinc 5.0 K/W Junction-to-Ambient Ring 175 Pulse width limited by maximum junction temperature (refer to transient thermal impedance data, Figure 11). 4-241SILICONIX INC L6E D M@ 8254735 0014822 9 my IRFF330/331/332/333 T-39-09 SEB Sion: incorporated ELECTRICAL CHARACTERISTICS (Ty = 25C Unless Otherwise Noted) ' UMITS PARAMETER SYMBOL TEST CONDITIONS TYP MIN MAX ] UNIT STATIC senses [AESEE | Yoree | teen Outon oun isl J. Gate Threshold Voltage Vase) Vos = Vas, Ip = 250 DA 2.0 4.0 Gate-Body Leakage lass Vos = OV. Vas = 20V +100 | nA Zoro Gata Voltage Drain Current Iss Vos = Vianioss: Vag = OV 250 | pA Vos = 0.8 X Viegjoss: Vas = OV, Ty = 126C 1000 On-State Drain IRFE330, 331 loom Vos = 5V, Vas = 10V 3.6 A Current! IRFF332, 333 . 3.0 Drain-Source On-State | IRFF330, 331 Ves = 10V. Ip = 2A 0.75 1.0 Resistance! IRFF332, 333 Tos(oey : 1.00 18 1 oO IRFF330, 331 Vas = 10V, Ip 2 2A 15 2.0 {RFF332, 333 Ty = 126C 19 3.0 Forward Transconductancet Sts Vos = 15 Vi. Ip = 2A 40 2.0 s DYNAMIC Input Capacitance Cissy 760 Output Capacitance Coss Vas * OV, Vos = 25V,f = 1 MHz 160 pF Reverse Transfer Capacttance Css 70 Total Gate Charge? Q, 22 15 36 Gate-Source Charge? Qn Vos = 0.6 X Visnjoss, Ves = 10Vjlp = 35A | 3.4 2 53 nc Gate-Drain Charge? Qua "1 87 | 2 Turm-On Delay Time? taron) 11 30 Rise Tims? t Vop = 176 V, R, = 86.0 12 35 ns Tur-Ott Delay Time? tary Ip S22 A, Vom = 10V, Rg = 75.0 45 55 Fail Time? % 22 35 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Te = 25C) Continuous Current IRFF330, 331 Ig 3.5 IRFF332, 333 3.0 A Pulsed Current? IRFF330, 331 long 4 IRFF332, 333 12 Forward Vottaget IRFF330, 331 Vsp le = Is, Veg = OV 1.6 Vv IRFF332, 333 1.5 Raverse Recovery Time tr Ip = I, dig/dt = 100 A/ps 250 ns Raversa Recovery Charge Qn 16 ne 1Putse test: Pulse Width < 300 piseo, Duty Cycle < 2%. 2independent of operating temperature, Putse width limited by maximum Junction temperature (refer to transient thermal! Impedance data, Figure 11). 4-242SILICONIX INC L6E D MM 6254735 0014823 T mm SF Siliconix IRFF330/331/332/333 TYPICAL CHARACTERISTICS (25C Unless Otherwise Specified) _ T- 3 9-09 Figure 1. Output Characteristics . Figure 2. Transfer Characteristics 5 T To= -55C 35C , 125C Vac=9, 10V 4 < = he 5 } 3 3 z z j & ze t & v 1 2 2 1 5V 4V 0 0 2 4 6 8 10 0 2 4 6 8 10 Vos - DRAIN-TO-SOURCE VOLTAGE (V) Vas - GATE-TO-SOQURCE VOLTAGE (Vv) Figure 3. Transconductance Figure 4. On-Resistance 10 2.5 ag = Ww 8 To= -55C- 2.0 2 Lamon Oo < a z < Vas=10V 8 8 7 25C b 1.8 Ss 3 4 f 125C Z 10 t= 20V a . 7 = ra t 5 x 2 2 8g 0.5 Tr 0 0 Q 2 4 6 8 10 0 2.5 .0 7.6 10.0 12.6 15.0 Ip ~ DRAIN CURRENT (A) Ip - DRAIN CURRENT (A) Figure Capacitance Figure 6. Gate Charge 1250 16,0 = G 12.5 @ 12. 1000 5 Ww = 10.0 2 750 QO & g 5 8 7.6 < a@ 00 3 Coss i, 5.0 \ & oO og 250 c l 2.6 rss a Go 0 > 0 Q 10 20 30 40 50 0 10 16 20 25 30 Vos - DRAIN-TO-SOURCE VOLTAGE (Vv) Qg - TOTAL GATE CHARGE (nC) 4-243z = wae ee ae SILICONIX INC GE D mm 8254735 0014824 1 IRFF330/331/332/333 $F Siliconix . incorporated TYPICAL CHARACTERISTICS (Cont'd) T- 39-09 Figure 7, On-Resistance vs. Junction Temperature Figure 8. Source-Drain Diode Forward Voltage 2.25 100 T = 25 = e 2.00 4 ' = < QO 1.75 b Zn a x 9 tr BE 1.60 & ay 3 wy 3 um ~=10 Ze 1.26 2 9 3 1,00 9 z t B 0.75 2 0.650 1 -0 = -70 30 70 110 160 0 1 2 3 4 5 Ty - JUNCTION TEMPERATURE (C) Vsp - SOURCE-TO-DRAIN VOLTAGE (V) THERMAL RATINGS Figure 9. Maximum Avalanche and Drain Current vs. Case Temperature Figure 10, Safe Operating Area 100 = 5 10 = IRFF330 {RFF331 iy > 3 c 5 S & a RN = c a z a 7 =. 1 IRFF92,IRFF933 SS = 1 2 0.1 0 0.05 0 25 50 7 100 125 150 2 10 100 1000 2000 Te - CASE TEMPERATURE (C) Vos - DRAIN-TO-SOURCE VOLTAGE (Vy) . Operation In this area may be limited by Foston) Figure 11. Normalized Effective Transient Thermal Impedance, Junction-to-Case 2 0.1 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 0.01 105 to+ 10 10? 107 1 SQUARE WAVE PULSE DURATION (sec) 4-244