LITE-ON SEMICONDUCTOR DUAL ESD PROTECTION DIODES L30ESDxVC3-2 STAND-OFF VOLTAGE - 5~24 Volts POWER DISSIPATION - 300 WATTS GENERAL DESCRIPTION SOT23 The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage suppressor designed to protect components which are connected to data and transmission lines against Electro Static Discharge (ESD). It clamps the voltage just above the logic level supply for positive transients , and to a diode drop below ground for negative transients. It can work as bi-directional suppressor by connecting only pin 1 to 2. F G I DIM. SOT23 MIN. MAX. A B 0.89 0.30 0.51 C D 0.085 E 1.20 0.85 1.70 2.75 F FEATURES G H 2 Unidirectional ESD protection. Max. peak pulse power : Ppp = 300W at tp = 8/20 us Ultra low leakage current : IRM < 1uA @ VBR ESD protection > 25KV per MIL-STD-883C, Method 3015-6: Class 3. 2.10 0.0 I L S 1.40 0.18 3.04 1.60 1.05 2.10 2.75 0.1 0.6 typ. 0.35 0.65 All Dimensions in millimeter IEC 61000-4-2, level 4 ( ESD ),>15KV(air) ;>8KV(contact ). Ultra small SMD plastic packages 3 PIN ASSIGNMENT APPLICATION 1 2 Computers and peripherals Communication system Portable electronics Cellular handsets and accessories. 1,2 Cathode 3 Ground Marking & Orientation MECHANICAL DATA Case Material: "Green" molding compound UL flammability classification 94V-0 (No Br.Sb, Cl) Terminals: Lead Free Plating (Matte Tin Finish), solderable per J-STD-002 and JESD22-B/02. Moisture Sensitivity: Leve 1 per J-STD-020C Component in accordance to RoHs 2002/95/EC Marking: L30ESD5V0C3-2, XX XX: LT C5 L30ESD12V0C3-2, XXX XX: VCC YM L30ESD24V0C3-2, XXX XX: VCO YM MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit Peak pulse Power ( 8/20us Waveform) PPPM 300 W Operating Junction Temperature Range TJ -55 to + 125 Tstg -55 to + 150 TL 260 Storage Temperature Range Soldering Temperature, t max = 10s REV. 1, Sep-2009, KSIR03 RATING AND CHARACTERISTIC CURVES L30ESDxVC3-2 ELECTRICAL CHARACTERISTICS (Tj= 25 unless otherwise noticed) L30ESD5V0C3-2 Parameter Symbol Conditions MIn Typ Max Unit Reverse standoff voltage VDRM --- --- --- 5 V Reverse leakage current IRM VDRM = 5V --- --- 1 uA Peak pulse Current Ipp tp = 8/20us --- --- 17 A Breakdown voltage VBR IR = 1 mA 6.4 --- 7.2 V Diode capacitance CJ VR = 0 V , f = 1MHz --- 156 160 pF Clamping Voltage VCL Ipp= 1 A, tp = 8/20us --- ---- 9.8 V Clamping Voltage VCL Ipp= 15 A, tp = 8/20us --- ---- 20 V Forward voltage drop VF IF = 200 mA --- --- 1.25 V Symbol Conditions MIn Typ Max Unit Reverse standoff voltage VDRM --- --- --- 12 V Reverse standoff voltage IRM VDRM = 12 V --- --- 1 uA Peak pulse Current Ipp tp = 8/20us --- --- 12 A Breakdown voltage VBR IR = 1 mA 14.2 --- 15.8 V Diode capacitance CJ VR = 0 V , f = 1MHz --- 78 100 pF Clamping Voltage VCL Ipp= 1 A, tp = 8/20us --- --- 19 V Clamping Voltage VCL Ipp= 12 A, tp = 8/20us --- --- 25 V Forward Voltage VF IF=200 mA --- --- 1.25 V Symbol Conditions MIn Typ Max Unit Reverse standoff voltage VDRM --- --- --- 24 V Reverse leakage current IRM VDRM = 5V --- --- 1 uA Peak pulse Current Ipp tp = 8/20us --- --- 4 A Breakdown voltage VBR IR = 1 mA 26.7 --- 29.6 V Diode capacitance CJ VR = 0 V , f = 1MHz --- 30 60 pF Clamping Voltage VCL Ipp= 1 A, tp = 8/20us --- --- 36 V Clamping Voltage VCL Ipp= 4 A, tp =8/20us --- --- 43 V Forward voltage drop VF IF = 200 mA --- --- 1.25 V L30ESD12VC3-2 Parameter L30ESD24VC3-2 Parameter RATING AND CHARACTERISTIC CURVES L30ESDxVC3-2 120 100% 80 Percent of Peak Pulse Current % Percent of Peak Pulse Current (%) 100% Ipp: 8us -1 e 50% Ipp: 20us 40 90% 10% 0 10 20 30 40 60 ns Time (us) Figure 1. 8/20 us pulse waveform according to IEC 61000-4-5 Figure 2. ESD pulse waveform according to IEC 61000-4-2 TJ =25, tp (us) = 8/20 us exponentially decay waveform 1.2 1000 Ppp / Ppp (25) Peak pulse Power (W) 10000 Time (ns) tr = 0.7 ~1 ns 30 ns 0 100 0.8 0.4 0 10 1 10 100 1000 0 10000 25 Pulse Time (us) 50 75 100 Junction Temperature () 125 Figure 4. Peak pulse power versus TJ Figure 3. Power Dissipation versus Pulse Time 180 10.0 TJ =25, f=1MHz, Vosc=100 mV 160 120 IR / IR (25) Capacitance (pF) 140 100 5V 80 1.0 60 40 12V 20 24V 0 0.1 0.0 1.0 2.0 3.0 4.0 Reverse Voltage (V) Figure 5. Typical Junction Capactiance 5.0 0 30 60 90 120 Junction Temperature () Figure 6. Reverse Leakage Current versus TJ 150 RATING AND CHARACTERISTIC CURVES L30ESDxVC3-2 I/O1 +/-8KV ESD Contact discharge V (i/o) Figure 7. ESD Test Configuration L30ESD5V0C3-2 V (i/o) V (i/o) Figure 8. Clamped +8 kV ESD voltage waveform Figure 9. Clamped -8 kV ESD voltage waveform L30ESD12VC3-2 V (i/o) V (i/o) Figure 10. Clamped +8 kV ESD voltage waveform Figure 11. Clamped -8 kV ESD voltage waveform L30ESD24VC3-2 V (i/o) Figure 12. Clamped +8 kV ESD voltage waveform V (i/o) Figure 13. Clamped -8 kV ESD voltage waveform Specifications mentioned in this publication are subject to change without notice.