Product Specification www.jmnic.com
Silicon PNP Power Transistors 2SA1659 2SA1659A
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4370/4370A
·High transition frequency fT
APPLICATIONS
·High voltage applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1659 -160
VCBO Collector-base voltage 2SA1659A Open emitter -180 V
2SA1659 -160
VCEO Collector-emitter voltage
2SA1659A Open base -180 V
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -1.5 A
IB Base current -0.15 A
PC Collector dissipation TC=25℃ 20 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -55~150 ℃
JMnic
Product Specification www.jmnic.com
JMnic
Silicon PNP Power Transistors 2SA1659 2SA1659A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1659 -160
V(BR)CEO Collector-emitter
breakdown voltage 2SA1659A IC=10mA ; IB=0 -180 V
VCEsat Collector-emitter saturation voltage IC=-0.5A;IB=-50mA -1.5 V
VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -1.0 V
ICBO Collector cut-off current VCB=-160V;IE=0 -1
μA
IEBO Emitter cut-off current VEB=-5V; IC=0 -1
μA
hFE DC current gain IC=-0.1A ; VCE=-5V 70 240
fT Transition frequency IC=-0.1A ; VCE=-10V 100 MHz
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF
hFE classifications
O Y
70-140 120-240
Product Specification www.jmnic.com
JMnic
Silicon PNP Power Transistors 2SA1659 2SA1659A
PACKAGE OUTLINE
Fig.2 Outline dimensions
