Io = 200 mA
VR = 30 Volts
RoHS Device
RB521S-30
SMD Schottky Barrier Diode
Page 1
QW-BB044
REV:A
A
mA
V
1
200
30
IO
VR
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+150
+150
TSTG
Tj
Storage temperature
Junction temperature
Mean rectkfying current
DCReverse voltage
Peak forward surge current
Parameter Conditions Symbol Min Typ
Max
Unit
µA
V
30
0.5
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 200 mA
Maximum Rating (at TA=25°C unless otherwise noted)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Comchip Technology CO., LTD.
Dimensions in inches and (millimeter)
SOD-523
0.014(0.35)
0.010(0.25)
0.051(1.30)
0.043(1.10)
0.033(0.85)
0.030(0.75)
0.067(1.70)
0.059(1.50)
0.008(0.20)
REF
0.006(0.15)
0.003(0.08)
0.031(0.77)
0.020(0.51)
0.003(0.07)
0.001(0.01)
Features
- Low reverse current.
- Low forward voltage.
- Designed for mounting on small surface.
- Extremely thin package.
- Majority carrier conduction.
Mechanical data
- Case: SOD-523 standard package,
Molded plastic.
- Terminals: solderable per
MIL-STD-750,method 2026.
- Marking code: cathode band & C
- Mounting position: Any
- Weight: 0.0012 gram(approx.).
Circuit Diagram
Comchip
S M D D i o d e S p e c i a l i s t
-55
RATING AND CHARACTERISTIC CURVES (RB521S-30)
SMD Schottky Barrier Diode
Page 2
REV:A
Capacitance Between Terminals, (PF)
Reverse Voltage, (V)
0
20
40
60
80
100
0 25 50 75 100 125
Ambient Temperature, (°C)
Power Dissipation, (mV)
Fig.4 - Power Derating curve
Fig. 3 - Capacitance characteristics
0 10 15
1
10
100
520
Reverse Current, ( uA )
Reverse voltage, (V)
1
0.1
10
0 10 20 25 30
Fig. 2 - Reverse characteristics
1000
100
15
5
150
Comchip Technology CO., LTD.
Fig.1- Forward Characteristics
Forward Current, (mA)
Forward Voltage, (mV)
0 400
10
1000
0.1
100 200 300 500 600
0.01
1
100
QW-BB044
Comchip
S M D D i o d e S p e c i a l i s t
O
TA=100 C
O
TA=25 C
TA=25°C
f = 1 MHz
TA=100°C
TA=25°C
SMD Schottky Barrier Diode
Page 3
REV:A
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
.......
.......
.......
.......
..... ..
.......
End Start
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Comchip Technology CO., LTD.
QW-BB044
Index hole
d
E
F W
A
P
P0
P1
B
Polarity
B C dD D2D1
SOD-523
SYMBOL
A
(mm)
(inch) 2.142 ± 0.016
2.00 ± 0.10
1.50 + 0.10 54.40 ± 0.40 13.00 ± 0.20
4.00 ± 0.10 2.00 ± 0.10
178 ± 1.00
0.059 0.004+7.008 ± 0.039 0.512 ± 0.008
SYMBOL
(mm)
(inch) 0.079 ± 0.004 0.158 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.05
0.138 ± 0.002
SOD-523
0.90 ± 0.10
0.035 ± 0.004
1.94 ± 0.10
0.076 ± 0.004
0.73 ± 0.10
0.029 ± 0.004
9.50 ± 1.00
0.374 ± 0.039
8.00 0.30 /+–0.10
0.315 0.012 /+–0.004
Comchip
S M D D i o d e S p e c i a l i s t
SMD Schottky Barrier Diode
Page 4
REV:A
Part Number
RB521S-30
Marking Code
C
Marking Code
Comchip Technology CO., LTD.
C
QW-BB044
Suggested PAD Layout
SIZE
(inch)
0.055
(mm)
1.40
0.60
0.70
0.024
0.028
SOD-523
2.00 0.079
E0.80 0.031
Standard Packaging
Case Type Qty Per Reel
(Pcs)
3,000
SOD-523
Reel Size
(inch)
7
A
B
C
D
A
C
B
E
D
Comchip
S M D D i o d e S p e c i a l i s t
