TEXAS INSTR {OPTO} I FEBRUARY 1968 REVISED OCTOBER 1984 150 W at 25C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Min fhte of 30 kHz Min fT of 4 MHz Designed for Use in Power Amplifier and Switching Applications device schematic 0-3 PACKAGE THE COLLECTOR IS IN ELECTRICAL _ CONTACT WITH THE CASE absolute maximum ratings at 25C case temperature (unless otherwise noted) 2N3713 2N3714 | 2N3715 Vv current current current case temperature {sae Nota 2) temperature (see Note 3) temperature mm case areas at case temperature : storage temperature range NOTES: 1. This value applies for ty = 0.3 ms, duty cycle < 10%. 2. Derate linearly to 200C case temperature at the rate of 0.855 W/C. 3. Derate linearly to 200C free-air temperature at the rate of 22.9 mW/C. 4 t *JEDEC registered data. - 1283 TEXAS we INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 2 > Q 2 N 2-3 {~ 8961726 TEXAS INSTR COPTO) zc 36571 oD | eR 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SILICON POWER TRANSISTORS . . , JT -33-03 4 (_TEXAS INSTR LOPTO} d N@ S33DIAB 2-4 8961726 TEXAS INSTR COPTO) 62C 36572 D 7-33-13 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SILICON POWER TRANSISTORS Lt electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS 2n3713 2N3714 UNIT : MIN TYP MAX | MIN TyP MAX ICEO IcEv bre VBE VcEisat) electrical characteristics at 25C case temperature (unless otherwise noted} PARAMETER TEST CONDITIONS 2N3715 2N3716 UNIT MIN_ TYP MAX | MIN TYP MAX IcEO Icev bEE VBE VCE(sat) ' , CB = , = = NOTES: -4. These parameters must be measured using pulse techniques, tw = 300 ys, duty cycle < 2%. -S. These parameters are measured with valtage-sensing contacts separate from the current-carrying contacts and located within 1,6 mm (0.0625 inch) from the device body. . 6. fife is the frequency at which the magnitude of the small-signal forward current transfer is 0.707 of its low-frequency value.- For these devices, the reference measurement is made at 1 kHz. . TEXAS % INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 be DE Pese1ret 0036572 2 TTEXAS INSTR LOPTOF b2 DE face172 0036573 4 Tr f 8961726 TEXAS INSTR COPTO) 62C 36573. OD ee oe . 7T33-/3 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SILICON POWER TRANSISTORS ee thermal characteristics PARAMETER MIN TYP MAX | UNIT Resc 1.17 | CWW Rela 43.7 | CAW resistive-load switching characteristics at 25C case temperature PARAMETER . TEST CONDITIONST MIN TYP MAX | UNIT ton tc =1A, Ip1 = 0.14, lag = -0.1A, 450 ns toff Vee (oft) = 3.7 Vv, RL = 202, ~ SeeFigure1 350 ns tVoltage and current values shown are nominal; exact values vary slightly with transistor parameters. PARAMETER MEASUREMENT INFORMATION OUTPUT INPUT n @ 5 a 2 N TEST CIRCUIT eve oo wd INPUT | . -1V \ | ton p ts totf I | 1 ; 0% \ ouTPUT 90% VOLTAGE WAVEFORMS NOTES: A. The input waveform is supplied by a generator with the following characteristics: ty < 15 ns, t< 15ns, Zour = 502, tw = 10ps, duty cycle < 2%. . Waveforms are monitored on an oscilloscope with the following characteristics: ty < 16ns, Rip = 10 MQ, Cin < 11.5 pF. . Resistors must be noninductive types. . The d-c power supplies may require additional bypassing in order to minimize ringing. vag FIGURE 1. RESISTIVE-LOAD SWITCHING 1283 ij . TEXAS % . 2-5 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265be 3=DE jetb17eb OO36b574 & I TEXAS INSTR {0PTO} _ . - 8961726 TEXAS INSTR COPTO) 62C 36574 OD ae 733-/3 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS - 2N3713, 2N3714 2N3715, 2N3716 STATIC FORWARD CURRENT TRANSFER RATIO STATIC FORWARD CURRENT TRANSFER RATIO vs . VS COLLECTOR CURRENT COLLECTOR CURRENT 100 p-- a 240 a g Vce=4V 2 VcE=4V e See Notes 4 and 5 e See Notes 4 and 5 5 go rorage 5 200 3 PT = 150C y r IN 3 Lon wn Te 7 150C Tc = 100C Pant E | N F raat MY Feo To = 100C 8 60} To= 26C Yer 5 I TH N = Ty = TW ~ ax 8 Wh tes ~ 55 \ 8 120) at a = E 40 Hd YW r HH \ ; | ly Tc = 25 c] N 2 ON 5 80 4 i - ' 32 8 Yah e LTT [HT To= 85C : 2 GZ Ly 2 -T | Le gO g 0p > = sob eo tf @ 40 < rm w Le oq = oO 0 & 0.01 9.04 0.1 04 1 4 10 0.01 0,04 0.1 04 1 4 10 IcCollecter CurrentA . IcCollector CurrentA FIGURE 2 FIGURE 3 . ] BASE-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE vs vs CASE TEMPERATURE CASE TEMPERATURE 3.5 4 See Notes 4 and VcE=4V - IB=2A,I=10A : See Notes 4 and 5 & o 118-054, Ic@ 5A N a Ic=10A 0.4 Hd So IB=O.1AIG=1A IG=5A = a 0.1 = 10 io =0. lc=1A . B COTA VpeEBase Emitter VoltageV = > 0.04 S a Ic=0.1A VCE(sat}Collector-Emitter Saturation Voltage-V 0 - 0.01 -75 -50-25 0 25 50 75 100 125 150 -75 -50-25 0 25 SO 75 100 125 150 . To~Case Temperature~C To-Case TemperatureC FIGURE 4 FIGURE 5 NOTES: 4. These parameters must be measured using pulse techniques, ty = 300 ys, duty cycle < 2%. 5. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 1,6 mm (0.0625 inch) from the device body. ve 1283 TEXAS INSTRUMENTS | POST OFFICE BOX 225012 DALLAS, TEXAS 75265 2-6TEXAS INSTR fOPTO} be DE Pacer. O03b575 a I ieee 5961726 TEXAS INSTR COPTO) - 62C 36575 D Sores 7-33-/3 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS NORMALIZED COLLECTOR-EMITTER COMMON-BASE OPEN-CIRCUIT BREAKDOWN VOLTAGE OUTPUT CAPACITANCE . vs vs 7 BASE-EMITTER RESISTANCE COLLECTOR-BASE VOLTAGE et? 500 Tm = le=9 > 1.0 . 0.1 to 1MHz 400 aN To = 25C c=} 3 o o 3 0.8 N a go 300 5 a z 0.6 & NJ . a 3B 200 Pe 3 0.4 ; t DSN 3 =30 mA a S02 Te = 25C gf 100 3 W See Note 4 QO & 0 0 Zz > 1 10 100 ik 10k 100k 1 2 4 7 10 20 40 70100 N ReeBase-Emitter ResistanceQ VepCollector-Base VoltageV FIGURE 6 FIGURE 7 NOTE 4: These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle 2%. MAXIMUM SAFE OPERATING AREA 2N3713, 2N3715 2N3714, 2N3716 FORWARD-BIAS SAFE OPERATING AREA . FORWARD-BIAS SAFE OPERATING AREA 10 10 To <25C To <25C . 4 DC Operation 4 DC Operation = 1ms,d <0.5 < tw= 1 ms d 205m, d<0.3 2 ty = 0.5 ms, d <0.3 & ty = 0.26 ms, d <0.25 ty = 0.25 ms, d < 0.25 (25%) & ty = 0.05 ms, d<0.2 ty = 0.05 ms, d <0.2 (20%) 5 1 5 1 g 8 3 4 io4 0.1 0.1 4 4 10 40 100 1 4 10 40 100 | : VeeCollector-Emitter VoltageV VcECollector-Emitter VoltageV FIGURE 8 FIGURE 9 1283 ay . TEXAS 2-7 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 'TEXAS INSTR {0PTO} L2 DE lese1 724 0036576 o T ae 62C 36576 D { 8961726 TEXAS INSTR COPTO) _. _. > 3 ) : oo ptt, . ~33-/3 i , '2N3713, 2N3714, 2N3715, 2N3716 N-P-N SILICON POWER TRANSISTORS THERMAL INFORMATION * DISSIPATION DERATING CURVE PEAK POWER COEFFICIENT CURVE. = 175 1 | t 5... Duty i S150 2 2 - 6125 N 5 Z N\ : @ 100 XN 3 0.10 (10%) = 8 * \ Z 0.1 *: = N a 5 e x =a 8S 50 N 0.04 _1- iN Z Mo 5 = altel NS & 25 - 0.01 tw = Pulse duration in ms 2 2 . i = Duty cycle ratio > L 0 - 001 7 = Thermal time constant = 4.4 ms g 0 25 50 75 100 125 160 175 200 0.02 0.04 0.7 04 14 4 10 20 o ToCase TemperatureC tyPulse Durationms 8 FIGURE 10 FIGURE 11 * 1283 "j . 2-8 TEXAS % INSTRUMENTS POST OFFICE BOX 226012 DALLAS, TEXAS 75265