: "IRF 720,721 OWE IMOS [FET [pescaz.ar FIELD EFFECT POWER TRANSISTOR | .a'tsidis Rips(ON) =1.80 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance & in most switching applications including: switching power ; s supplies, inverters, converters and solenoid/relay drivers. onCASE STYLE TO-220AB Also, the extended safe operating area with good linear $182.95) soos transfer characteristics makes it well suited for many linear Seta.) of OT) TOO le Sal os6t1 38 y tt (1.22) applications such as audio amplifiers and servo motors. 7 = 1D > ee Features 4 | reweER ATURE on ve Coane / | t REFERENCE e Polysilicon gate Improved stability and reliability 189. san + 510.021 bs V4 -220(5.59) No secondary breakdown Excellent ruggedness | b om . + -130{3.3) - S060 tS) Ultra-fast switching Independent of temperature A i sonenes) TERM.1 5 ; , e Voltage controlled High transconductance TERM oie e Low input capacitance Reduced drive requirement TERMS ff vas 933(0.84) .105(2.67' 4 -107(2.72! Excellent thermal stability Ease of paralleling aa7ipes) En wie co aa ra a UNIT TYPE |TERM.TEAM.2] TERMS TAB POWER MOS FET }T0-220-AB] GATE |DRAIN| SOURCE} DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF720/D84CQ2 IRF721/D84CQ1 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Res = 1M0 Vocr 400 350 Volts Continuous Drain Current @ Tc = 25C Ip 3 3 A c = 100C 2 2 A Pulsed Drain Current lom 12 12 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 40 40 Watts Derate Above 25C 0.32 0.32 w/c Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Reic 3.12 3.12 C/W Thermal Resistance, Junction to Ambient Rega 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 209electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF720/D84CQ2 | BVpss 400 _ _ Volts (Ves = OV, !p = 250 wA) IRF721/D84CQ1 350 - _ Zero Gate Voltage Drain Current !pss (Vps = Max Rating, Vgg = OV, Tc = 25C) ~ 250 uA (Vpg = Max Rating, 0.8, Vgg = OV, Tc = 125C) ~ _ 1000 One woovy Current less _ _ +500 nA on characteristics* Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts . (Vps = Vas: Ip = 250 wA) On-State Drain Current _ _ (Vag = 10V, Vpg = 10V) ID(ON) 3.0 A Static Drain-Source On-State Resistance _ (Vag = 10V, Ip = 1.5A) Ros(on) 1.4 1.8 Ohms Forward Transconductance _ (Vp = 10V, Ip = 1.5A) Ofs 0.9 1.6 mhos dynamic characteristics Input Capacitance Vas = 10V Ciss _ 385 600 pF Output Capacitance Vps = 25V Coss _ 70 200 pF Reverse Transfer Capacitance f= 1 MHz Crss - 12 40 pF switching characteristics Turn-on Delay Time Vps = 175V ta(on) _ 15 _ ns Rise Time Ip = 1.5A, Veg = 15V tr ~ 10 ns Turn-off Delay Time RGeN = 500, Res = 12.50 | tavoffy -_ 25 _ ns Fall Time (Res (Equiv. = 100) tt _ 16 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 3 A Pulsed Source Current Ism ~ _ 12 A Diode Forward Voitage _ (To = 28C, Vag = OV, Is = 3A) Vso 0 6 | Volts Reverse Recovery Time ter _ 280 _ ns (Ig = 3A, dig/dt = 100A/usec, To = 125C) Qrr _ 2.0 _ uC Pulse Test: Pulse width <= 300 ys, duty cycle = 2% 100 80 60 40 20 & 2MO n OPERATION IN THIS AREA MAY BE LIMITED BY Rogion; 1). DRAIN CURRENT (AMPERES) 9 99> - amo SINGLE PULSE T)= 25C 10ms 100ms O41 1 2 4 8 810 20 40 60 80100 200 Vpg. ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 2.4 2.2 CONDITIONS: RDS(ON) CONDITIONS: Ip = 1.5 A, Vag = 10V 2.0 V@s(TH) CONDITIONS: ip = 250A, Vg = Vag 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Royston) AND Vesey) NORMALIZED 04 0.2 0 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rosion, AND Vagiry VS: TEMP. 210