NBB-502 NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 19.0dB Gain, +13.0dBm P1dBat2GHz High P1dB of +14.0dBmat6.0GHz Single Power Supply Operation 50 I/O Matched for High Frequency Use Pin 1 Indicator 1 2 3 RF OUT Ground 8 9 4 Ground RF IN 7 6 5 Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WiFi/ Cellular/DWDM) Functional Block Diagram Product Description The NBB-502 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for smallsignal applications. Designed with an external bias resistor, the NBB-502 provides flexibility and stability. The NBB-502 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either 1,000 or 3,000 piece-per-reel quantities. Ordering Information NBB-502 NBB-502-T1 NBB-502-E NBB-X-K1 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Tape and Reel, 1000 Pieces Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer's Tool Kit Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS120130 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 8 NBB-502 Absolute Maximum Ratings Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW Device Current 70 mA Channel Temperature 150 C Operating Temperature -45 to +85 C Storage Temperature -65 to +150 C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Specification Typ. Max. Unit Overall Small Signal Power Gain, S21 Condition VD =+3.9V, ICC =35mA, Z0 =50, TA =+25C 19.0 16.0 Gain Flatness, GF Input and Output VSWR 20.5 dB 19.0 dB f=0.1GHz to 1.0GHz f=1.0GHz to 2.0GHz 17.0 dB f=2.0GHz to 4.0GHz 0.8 dB f=1.0GHz to 3.0GHz 1.55:1 f=0.1GHz to 4.0GHz 1.50:1 f=4.0GHz to 6.0GHz 1.55:1 f=6.0GHz to 10.0GHz Bandwidth, BW 4.2 GHz BW3 (3dB) Output Power at -1dB Compression, P1dB 13.0 dBm f=2.0GHz 14.0 dBm f=6.0GHz 4.0 dB f=3.0GHz Third Order Intercept, IP3 +23.0 dBm f=2.0GHz Reverse Isolation, S12 -17.0 dB Noise Figure, NF Device Voltage, VD Gain Temperature Coefficient, GT/T 3.6 3.9 -0.0015 4.2 f=0.1GHz to 10.0GHz V dB/C MTTF versus Temperature at ICC =35mA Case Temperature Junction Temperature MTTF 85 C 109.4 C >1,000,000 hours 179 C/W Thermal Resistance JC 2 of 8 J T - T CASE --------------------------- = JC C Watt V D I CC 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120130 NBB-502 Pin 1 Function GND 2 3 4 GND GND RF IN 5 6 7 8 GND GND GND RF OUT Description Interface Schematic Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 1. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. Same as pin 1. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: V CC - V DEVICE R = -----------------------------------------I CC 9 GND RF OUT RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 1. Package Drawing DS120130 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 3 of 8 NBB-502 Recommended PCB Layout Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VCC RCC 1,2,3 L choke (optional) 4 In 8 Out C block C block 5,6,7,9 VDEVICE VD = 3.9 V Recommended Bias Resistor Values Supply Voltage, VCC (V) 5 8 10 12 15 20 Bias Resistor, RCC () 31 117 174 231 317 460 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120130 NBB-502 Application Notes Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150C cure for 1 hour is necessary. Recommended epoxy is Ablebond 841LMI from Ablestik. Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160C10C. Extended Frequency InGaP Amplifier Designer's Tool Kit NBB-X-K1 This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. * * * * 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation DS120130 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 5 of 8 NBB-502 Tape and Reel Dimensions All Dimensions in Millimeters T A O B S D F 330 mm (13") REEL ITEMS Diameter Micro-X, MPGA SYMBOL SIZE (mm) B 330 +0.25/-4.0 FLANGE Thickness Space Between Flange HUB T F Outer Diameter Spindle Hole Diameter O S Key Slit Width Key Slit Diameter A D SIZE (inches) 13.0 +0.079/-0.158 18.4 MAX 12.4 +2.0 0.724 MAX 0.488 +0.08 102.0 REF 4.0 REF 13.0 +0.5/-0.2 0.512 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN PIN 1 User Direction of Feed 4.0 All dimensions in mm See Note 1 2.00 0.05 1.5 See Note 6 0.30 0.05 +0.1 -0.0 A 1.5 MIN. 1.75 R0.3 MAX. 5.50 0.05 See Note 6 12.00 0.30 Bo Ko Ao 8.0 A R0.5 TYP SECTION A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. 6 of 8 Ao = 3.6 MM Bo = 3.6 MM Ko = 1.7 MM 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120130 NBB-502 Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S11 versus Frequency at +25C S12 versus Frequency at +25C -5.0 -5.0 -10.0 -10.0 S12 (dB) 0.0 S11 (dB) 0.0 -15.0 -15.0 -20.0 -20.0 -25.0 -25.0 0.0 5.0 10.0 0.0 5.0 Frequency (GHz) 10.0 Frequency (GHz) S21 versus Frequency at +25C S22 versus Frequency at +25C 25.0 0.0 -5.0 20.0 -10.0 S22 (dB) S21 (dB) 15.0 -15.0 10.0 -20.0 5.0 -25.0 0.0 -30.0 0.0 5.0 Frequency (GHz) DS120130 10.0 0.0 5.0 10.0 15.0 20.0 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 7 of 8 NBB-502 Device Voltage versus Amplifier Current P1dB versus Frequency at 25C 4.00 20.0 P1dB (dBm) Device Voltage, V D (V) 15.0 3.95 10.0 3.90 5.0 3.85 0.0 20.00 25.00 30.00 35.00 40.00 45.00 50.00 1.0 2.0 POUT/Gain versus PIN at 2 GHz 4.0 5.0 6.0 POUT/Gain versus PIN at 6 GHz 20.0 18.0 18.0 16.0 16.0 14.0 14.0 POUT (dBm), Gain (dB) POUT (dBm), Gain (dB) 3.0 Frequency (GHz) Amplifier Current, ICC (mA) 12.0 10.0 8.0 6.0 12.0 10.0 8.0 6.0 4.0 4.0 Pout (dBm) 2.0 Pout (dBm) 2.0 Gain (dB) Gain (dB) 0.0 0.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 PIN (dBm) -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 PIN (dBm) Third Order Intercept versus Frequency at 25C 30.0 Output IP3 (dBm) 25.0 20.0 15.0 10.0 5.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 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