T4-LDS-0232, Rev. 1 (111957) ©2011 Microsemi Corporation Page 1 of 5
1N5221B-1 t hr u 1N5 281B -1
Available on
commercial
versions
500 mW GLAS S AXIAL-LEAD
ZENER DIODES
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
The popular 1N5221B-1 t hr u 1N 5 281B-1 series of 0. 5 watt Zener voltage reg ulators provides a
sel ection from 2.4 to 200 volts in standar d 5% or 10% tol er anc es as well as tigh ter tolerances
identified by different suffix letters on the part number. These glass , axial-lead ed DO-35
Zeners ar e also a vailable in v ar ious up-screening levels by adding a prefix identifier as
desc r i bed in the Part N om enc laturesection of th i s d atasheet. M icrosem i also offers
num er ous other Zener prod ucts to meet higher and lower p ower applicati ons .
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA MELF
(s urf ace mount )
1N5221BUR-1 thru
1N5281BUR-1
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
JEDEC registered 1N5221 thru 1N5281 series.
Voltage tolerances of 10%, 5%, 2%, and 1% available.
I nter nal meta llurgi cal bond.
Up-screening in reference to MIL-PRF-19500 is available. (See part nomenclature for all available
options.)
RoHS compliant versions available (commercial grade only).
APPLICAT IONS / BENE FITS
Regulates voltage over a broad operating current and temperature range.
Extensive selection from 2.4 to 200 V.
Flexible axial -l ead mounting terminals.
Non-sensitive to ESD (MIL-STD-750 method 1020).
Minimal capacitance (see Figure 2).
Inherently radiation hard per MicrosemiMicroNote 050 ”.
MAXIMUM R ATINGS
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead (1)
RӨJL
250
oC/W
Thermal Resistance Junction-to-Ambient (2)
RӨJA
310
oC/W
Steady-State Power Dissipation (3)
PD
0.5
W
Forward Voltage @ 200 mA
VF
1.5
V
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. At 3/8 (10 mm) le ad le ngt h fro m body .
2. When mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm , length 25
mm.
3. At TL < 50 oC 3/8 inch (10 mm) from body or 0.48 W at TA < 25 ºC w he n mounted on FR4 PC board as
described for thermal resistance above (al so see Figure1).
T4-LDS-0232, Rev. 1 (111957) ©2011 Microsemi Corporation Page 2 of 5
1N5221B-1 t hr u 1N5 281B -1
CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) pack age.
TERMINALS: Tin-lead or RoHS co mpl iant ann ealed matte-tin plating (commercial grade only) solderable per MIL-STD-750,
method 2026.
MARKING: Part number.
POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for
Zener regulation.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: 0.2 grams.
See Package Dimensions on last page.
MQ 1N5221 B -1 (e3)
Reliability Level
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
MSP (reference JANS)
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
Zener V oltage Toler anc e
A = 10%
B = 5%
C = 2%
D = 1%
RoHS Compliance
e3 = RoHS Compl iant (available
on commercial grade only)
Blank = non-RoHS Compliant
Metallurgically Bonded
SYMBOL S & DEFI NITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (I ZT), near breakdown knee (I ZK ).
IZM
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
TSP
Temperature Solder Pad: The maximum solder temperature that can be safely applied to the terminal.
VR
Reverse Voltage: The reverse voltage dc value, no al ternating component.
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT o r I ZK respectively.
T4-LDS-0232, Rev. 1 (111957) ©2011 Microsemi Corporation Page 3 of 5
1N5221B-1 t hr u 1N5 281B -1
JEDEC
Type No.
(Note 1)
Nominal
Zener
Voltage
VZ @ I ZT
Volts
Test
Current
IZT
mA
Max Zene r I m pe dan c e
(Note 2)
Max Reverse Leakage
Current
Max Zene r
Voltage
Temp. Coeff.
(Note 3)
α
VZ (% /
o
C)
ZZT @ IZT
Ohms
ZZK @ IZK = 0.25 mA
Ohms
IR @ VR
µA
Volts
A
B,C & D
1N5221B-1
1N5222B-1
1N5223B-1
1N5224B-1
1N5225B-1
2.4
2.5
2.7
2.8
3.0
20
20
20
20
20
30
30
30
30
29
1200
1250
1300
1400
1600
100
100
75
75
50
0.95
0.95
0.95
0.95
0.95
1.0
1.0
1.0
1.0
1.0
-0.085
-0.085
-0.080
-0.080
-0.075
1N5226B-1
1N5227B-1
1N5228B-1
1N5229B-1
1N5230B-1
3.3
3.6
3.9
4.3
4.7
20
20
20
20
20
28
24
23
22
19
1600
1700
1900
2000
1900
25
15
10
5.0
50
0.95
0.95
0.95
0.95
1.9
1.0
1.0
1.0
1.0
2.0
-0.070
-0.065
-0.060
+/-0.055
+/-0.030
1N5231B-1
1N5232B-1
1N5233B-1
1N5234B-1
1N5235B-1
5.1
5.6
6.0
6.2
6.8
20
20
20
20
20
17
11
7.0
7.0
5.0
1600
1600
1600
1000
750
5.0
5.0
5.0
5.0
3.0
1.9
2.9
3.3
3.8
4.8
2.0
3.0
3.5
4.0
5.0
+/-0.030
+0.038
+0.038
+0.045
+0.050
1N5236B-1
1N5237B-1
1N5238B-1
1N5239B-1
1N5240B-1
7.5
8.2
8.7
9.1
10
20
20
20
20
20
6.0
8.0
8.0
10
17
500
500
600
600
600
3.0
3.0
3.0
3.0
3.0
5.7
6.2
6.2
6.7
7.6
6.0
6.5
6.5
7.0
8.0
+0.058
+0.062
+0.065
+0.068
+0.075
1N5241B-1
1N5242B-1
1N5243B-1
1N5244B-1
1N5245B-1
11
12
13
14
15
20
20
9.5
9.0
8.5
22
30
13
15
16
600
600
600
600
600
2.0
1.0
0.5
0.1
0.1
8.0
8.7
9.4
9.5
10.5
8.4
9.1
9.9
10
11
+0.076
+0.077
+0.079
+0.082
+0.082
1N5246B-1
1N5247B-1
1N5248B-1
1N5249B-1
1N5250B-1
16
17
18
19
20
7.8
7.4
7.0
6.6
6.2
17
19
21
23
25
600
600
600
600
600
0.1
0.1
0.1
0.1
0.1
11.4
12.4
13.3
13.3
14.3
12
13
14
14
15
+0.083
+0.084
+0.085
+0.086
+0.086
1N5251B-1
1N5252B-1
1N5253B-1
1N5254B-1
1N5255B-1
22
24
25
27
28
5.6
5.2
5.0
4.6
4.5
29
33
35
41
44
600
600
600
600
600
0.1
0.1
0.1
0.1
0.1
16.2
17.1
18.1
20
20
17
18
19
21
21
+0.087
+0.088
+0.089
+0.090
+0.091
1N5256B-1
1N5257B-1
1N5258B-1
1N5259B-1
1N5260B-1
30
33
36
39
43
4.2
3.8
3.4
3.2
3.0
49
58
70
80
93
600
700
700
800
900
0.1
0.1
0.1
0.1
0.1
22
24
26
29
31
23
25
27
30
33
+0.091
+0.092
+0.093
+0.094
+0.095
1N5261B-1
1N5262B-1
1N5263B-1
1N5264B-1
1N5265B-1
47
51
56
60
62
2.7
2.5
2.2
2.1
2.0
105
125
150
170
185
1000
1100
1300
1400
1400
0.1
0.1
0.1
0.1
0.1
34
37
41
44
45
36
39
43
46
47
+0.095
+0.096
+0.096
+0.097
+0.097
1N5266B-1
1N5267B-1
1N5268B-1
1N5269B-1
1N5270B-1
68
75
82
87
91
1.8
1.7
1.5
1.4
1.4
230
270
330
370
400
1600
1700
2000
2200
2300
0.1
0.1
0.1
0.1
0.1
49
53
59
65
66
52
56
62
68
69
+0.097
+0.098
+0.098
+0.099
+0.099
1N5271B-1
1N5272B-1
1N5273B-1
1N5274B-1
1N5275B-1
100
110
120
130
140
1.3
1.1
1.0
0.95
0.90
500
750
900
1100
1300
2600
3000
4000
4500
4500
0.1
0.1
0.1
0.1
0.1
72
80
86
94
101
76
84
91
99
106
+0.110
+0.110
+0.110
+0.110
+0.110
1N5276B-1
1N5277B-1
1N5278B-1
1N5279B-1
1N5280B-1
1N5281B-1
150
160
170
180
190
200
0.85
0.80
0.74
0.68
0.66
0.65
1500
1700
1900
2200
2400
2500
5000
5500
5500
6000
6500
7000
0.1
0.1
0.1
0.1
0.1
0.1
108
116
123
130
137
144
114
122
129
137
144
152
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
*JEDEC registered data. JEDEC type numbers listed indicate a tol erance of +/- 5%. De vice s with guaranteed limits on all six parameters
are indicated by suffix A for +/- 10% tolerance and suffix B for +/- 5% tolerance. Also available with suffix C or D which indicates 2% and
1% tolerance r espectively.
T4-LDS-0232, Rev. 1 (111957) ©2011 Microsemi Corporation Page 4 of 5
1N5221B-1 t hr u 1N5 281B -1
NOTES:
1. The elect ri cal characteristics are measured after allowing the device to stabilize for 20 seconds when moun ted with a 3/8” (10 m m) minimum
lead length from the case.
2. The Zener impedance is derived from the 60 Hz ac voltage that results when an ac curr ent having an rms value equal to 10% of t he dc Zener
curr ent (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to ensure a shar p knee on the breakdown
curve, thereby eliminating unstable un its. Also see MicroNote 202for variation in dynamic impedance with differ ent operating currents.
3. Temperature coefficient (αVZ). Test conditions for temperature coefficient are as follows:
a. IZT = 20 mA, T1 = 25 oC, T2 = 125 oC (1N5221A, B thru 1N5242A, B).
b. IZT = Rated IZT , T1 = 25 oC, T2 = 125 oC (1N5243A, B th ru 1N5281A, B).
(Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temp.)
TL Lead Temp er ature at 3/8” From Zen er Voltag e VZ
Body or TA on FR4 PC Board
FIGURE 1 FIGURE 2
POW ER DERATING CURVE CAPACITANCE vs. ZENER VOLTAGE (TYPICAL)
Pd, Rated Power Dissipation (mW)
Typical Capacitance in Pico Farads (pF)
T4-LDS-0232, Rev. 1 (111957) ©2011 Microsemi Corporation Page 5 of 5
1N5221B-1 t hr u 1N5 281B -1
Ltr
Dimensions
Notes
Inch
Millimeters
Min
Max
Min
Max
BD
.055
.090
1.40
2.29
3
BL
.120
.200
3.05
5.08
3
LD
.018
.022
0.46
0.56
LL
1.000
1.500
25.40
38.10
LL1
.050
1.27
4
NOTES:
1. Dimensions are in inch.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder
but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including
slugs.
4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.