VCOS & PLOs - SMT
11
11 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MMIC VCO w/ BUFFER
AMPLIFIER, 2.05 - 2.25 GHz
v02.0705
General Description
Features
Functional Diagram
The HMC384LP4 & HM384LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer ampli ers. The
VCO’s phase noise performance is excellent over
temperature, shock, vibration and process due to the
oscillator’s monolithic structure. Power output is 3.5
dBm typical from a 3V supply voltage. The voltage
controlled oscillator is packaged in a low cost leadless
QFN 4 x 4 mm surface mount package.
Pout: +3.5 dBm
Phase Noise: -112 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 35 mA
QFN Leadless SMT Package, 16 mm2
Typical Applications
Low noise MMIC VCO w/Buffer Ampli er for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Electrical Speci cations, TA = +25° C, Vcc = +3V
Parameter Min. Typ. Max. Units
Frequency Range 2.05 - 2.25 GHz
Power Output 0.5 3.5 dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -112 dBc/Hz
Tune Voltage (Vtune) 0 10 V
Supply Current (Icc) (Vcc = +3.0V) 35 mA
Tune Port Leakage Current 10 μA
Output Return Loss 6dB
Harmonics
2nd
3rd
-7
-23
dBc
dBc
Pulling (into a 2.0:1 VSWR) 2.5 MHz pp
Pushing @ Vtune= +5V 5MHz/V
Frequency Drift Rate 0.25 MHz/°C
HMC384LP4 / 384LP4E