MITSUBISHI THYRISTOR MODULES TM60SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE TM60SZ-M * IT (AV) * VRRM Average on-state current ............ 60A Repetitive peak reverse voltage ................ 400V * VDRM Repetitive peak off-state voltage ................ 400V * TRIPLE ARMS * Non-Insulated Type APPLICATION Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 K1 K3 K2 G2 CR3 17.5 20 CR1 A K1 30 21 LABEL 6.5 9 K2 CR2 K1 G1 3-M5 20 Tab#110, t=0.5 K3 K1 26 K2 K3 G3 K1 G1 K3 G3 12.5 K2 K2 G2 K3 2-6.5 A Feb.1999 http://store.iiic.cc/ MITSUBISHI THYRISTOR MODULES TM60SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol Unit M VRRM Repetitive peak reverse voltage 400 V VRSM Non-repetitive peak reverse voltage 480 V VR (DC) DC reverse voltage 320 V VDRM Repetitive peak off-state voltage 400 V VDSM Non-repetitive peak off-state voltage 480 V VD (DC) DC off-state voltage 320 V Ratings Unit 95 A Three-phase, half-wave, TC=125C 60 A Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 1200 A I2t I2t for fusing Value for one cycle of surge current 6.0 x 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=150C 50 A/s PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C 1.47~1.96 N*m 15~20 kg*cm Parameter Symbol IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM Conditions Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Typical value Weight 1.96~2.94 N*m 20~30 kg*cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=150C, VRRM applied -- -- 25 mA IDRM Repetitive peak off-state current Tj=150C, VDRM applied -- -- 25 mA VTM On-state voltage Tj=150C, ITM=180A, instantaneous meas. -- -- 1.2 V dv/dt Critical rate of rise of off-state voltage Tj=150C, VD=2/3VDRM 200 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=150C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 15 -- 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/3 module) -- -- 0.3 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/3 module) -- -- 0.3 C/ W Feb.1999 http://store.iiic.cc/ MITSUBISHI THYRISTOR MODULES TM60SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE PERFORMANCE CURVES 10 3 7 Tj=150C 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 1600 1400 SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 1200 10 2 7 5 3 2 1000 10 1 7 5 3 2 10 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 30 50 70100 TRANSIENT THERMAL IMPEDANCE (C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.40 IFGM=2.0A 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) MAXIMUM AVERAGE ON-STAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 150 PER SINGLE ELEMENT 180 (C) 140 120 90 60 50 60 40 =30 360 30 20 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 10 10 20 30 40 50 60 70 CASE TEMPERATURE (V) GATE VOLTAGE 5 7 10 GATE CURRENT (mA) 70 AVERAGE ON-STATE POWER DISSIPATION (W) 2 3 CONDUCTION TIME (CYCLE AT 60Hz) VFGM=10V 0 1 (V) 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 100mA 7 5 Tj=25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 0 400 0 2.0 GATE CHARACTERISTICS 80 600 200 ON-STATE VOLTAGE 4 3 2 800 80 AVERAGE ON-STATE CURRENT (A) 360 130 RESISTIVE, INDUCTIVE LOAD 120 110 100 =30 60 90 90 180 120 80 70 0 10 20 30 40 50 60 70 80 AVERAGE ON-STATE CURRENT (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI THYRISTOR MODULES TM60SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 100 150 (C) 80 DC 180 120 90 60 60 360 =30 40 20 0 0 20 40 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 80 60 100 AVERAGE ON-STATE CURRENT CASE TEMPERATURE AVERAGE ON-STATE POWER DISSIPATION (W) 270 (A) PER SINGLE ELEMENT 360 140 RESISTIVE, INDUCTIVE LOAD 130 120 =30 60 90 180 270 DC 120 110 100 0 20 40 60 80 100 AVERAGE ON-STATE CURRENT (A) Feb.1999 http://store.iiic.cc/