/TechnicalInformation IGBT- IGBT-modules FS25R12KT3 EconoPACKTM2ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode EconoPACKTM2withfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 25 40 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 145 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C V 1200 VCE sat A A typ. max. 1,70 1,90 2,15 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 0,24 C Internalgateresistor Tvj = 25C RGint 8,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,80 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,064 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA () Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 36 Tvj = 25C Tvj = 125C td on 0,09 0,09 s s () Risetime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 36 Tvj = 25C Tvj = 125C tr 0,03 0,05 s s () Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 36 Tvj = 25C Tvj = 125C td off 0,42 0,52 s s () Falltime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 36 Tvj = 25C Tvj = 125C tf 0,07 0,09 s s () Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = 70 nH VGE = 15 V RGon = 36 Tvj = 25C Tvj = 125C Eon 2,50 mJ mJ ( Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = 70 nH VGE = 15 V RGoff = 36 Tvj = 25C Tvj = 125C Eoff 2,90 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,19 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-10-02 approvedby:RS revision:2.1 1 tP 10 s, Tvj = 125C 100 A 0,86 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules FS25R12KT3 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 25 A IFRM 50 A It 170 As /CharacteristicValues min. typ. max. 1,65 1,65 2,15 Forwardvoltage IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V Tvj = 25C Tvj = 125C Peakreverserecoverycurrent IF = 25 A, - diF/dt = 1100 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C IRM 33,0 35,0 A A Recoveredcharge IF = 25 A, - diF/dt = 1100 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Qr 2,60 4,90 C C Reverserecoveryenergy IF = 25 A, - diF/dt = 1100 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Erec 1,10 2,10 mJ mJ VF V V Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,32 Temperatureunderswitchingconditions Tvj op -40 125 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW 1,50 K/W K/W C /NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 t.b.d. K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 t.b.d. K Specificationaccordingtothevalidapplicationnote. preparedby:MK dateofpublication:2013-10-02 approvedby:RS revision:2.1 2 /TechnicalInformation IGBT- IGBT-modules FS25R12KT3 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu AI203 -/terminaltoheatsink -/terminaltoterminal 10,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 7,5 mm Comperativetrackingindex CTI > 225 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting min. typ. RthCH 0,02 LsCE 19 nH RCC'+EE' 2,50 m Tstg -40 125 C M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Weight G 180 g preparedby:MK dateofpublication:2013-10-02 approvedby:RS revision:2.1 3 max. K/W /TechnicalInformation IGBT- IGBT-modules FS25R12KT3 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 50 50 Tvj = 25C Tvj = 125C 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 45 IC [A] IC [A] 45 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 40 45 50 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=36,RGoff=36,VCE=600V 50 6,0 Tvj = 25C Tvj = 125C 45 Eon, Tvj = 125C Eoff, Tvj = 125C 5,5 5,0 40 4,5 35 4,0 3,5 E [mJ] IC [A] 30 25 3,0 2,5 20 2,0 15 1,5 10 1,0 5 0 0,5 5 6 7 8 9 VGE [V] 10 11 0,0 12 preparedby:MK dateofpublication:2013-10-02 approvedby:RS revision:2.1 4 0 5 10 15 20 25 30 IC [A] 35 /TechnicalInformation IGBT- IGBT-modules FS25R12KT3 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=25A,VCE=600V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 7,0 1 Eon, Tvj = 125C Eoff, Tvj = 125C 6,5 ZthJC : IGBT 6,0 5,5 5,0 4,5 ZthJC [K/W] E [mJ] 4,0 3,5 3,0 0,1 2,5 2,0 1,5 1,0 i: 1 2 3 4 ri[K/W]: 0,0978 0,3905 0,2198 0,1519 i[s]: 0,002345 0,0282 0,1128 0,282 0,5 0,0 0 20 40 60 80 100 RG [] 120 140 0,01 0,001 160 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=36,Tvj=125C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 60 50 IC, Modul IC, Chip 45 50 Tvj = 25C Tvj = 125C 40 35 40 IF [A] IC [A] 30 30 25 20 20 15 10 10 5 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MK dateofpublication:2013-10-02 approvedby:RS revision:2.1 5 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] /TechnicalInformation IGBT- IGBT-modules FS25R12KT3 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=36,VCE=600V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=25A,VCE=600V 3,5 2,5 Erec, Tvj = 125C Erec, Tvj = 125C 3,0 2,0 2,5 1,5 E [mJ] E [mJ] 2,0 1,5 1,0 1,0 0,5 0,5 0,0 0 5 10 15 20 25 30 IF [A] 35 40 45 0,0 50 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 10 ZthJC : Diode ZthJC [K/W] 1 0,1 i: 1 2 3 4 ri[K/W]: 0,152 0,985 0,283 0,0898 i[s]: 0,003333 0,03429 0,1294 0,7662 0,01 0,001 0,01 0,1 t [s] 1 10 preparedby:MK dateofpublication:2013-10-02 approvedby:RS revision:2.1 6 0 20 40 60 80 100 RG [] 120 140 160 /TechnicalInformation IGBT- IGBT-modules FS25R12KT3 PreliminaryData /circuit_diagram_headline J /packageoutlines In fin e o n preparedby:MK dateofpublication:2013-10-02 approvedby:RS revision:2.1 7 /TechnicalInformation IGBT- IGBT-modules FS25R12KT3 PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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