EconoPACK™2ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode
EconoPACK™2withfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
1
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryDataIGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC25
40 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 150 Ptot 145 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V VCE sat
1,70
1,90
2,15
V
V
Tvj = 25°C
Tvj = 125°C
栅极阈值电压
Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25°C VGEth 5,0 5,8 6,5 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,24 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 8,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,80 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,064 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 36 Ω
td on
0,09
0,09
µs
µs
Tvj = 25°C
Tvj = 125°C
上升时间(电感负载)
Risetime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 36 Ω
tr
0,03
0,05
µs
µs
Tvj = 25°C
Tvj = 125°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 36 Ω
td off
0,42
0,52
µs
µs
Tvj = 25°C
Tvj = 125°C
下降时间(电感负载)
Falltime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 36 Ω
tf
0,07
0,09
µs
µs
Tvj = 25°C
Tvj = 125°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = 70 nH
VGE = ±15 V
RGon = 36 ΩEon
2,50
mJ
mJ
Tvj = 25°C
Tvj = 125°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = 70 nH
VGE = ±15 V
RGoff = 36 ΩEoff
2,90
mJ
mJ
Tvj = 25°C
Tvj = 125°C
短路数据
SCdata VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt ISC
100
A
Tvj = 125°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,86 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,19 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 125 °C
2
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
连续正向直流电流
ContinuousDCforwardcurrent IF25 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 50 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 170 A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V VF
1,65
1,65
2,15
V
V
Tvj = 25°C
Tvj = 125°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 25 A, - diF/dt = 1100 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
IRM
33,0
35,0
A
A
Tvj = 25°C
Tvj = 125°C
恢复电荷
Recoveredcharge IF = 25 A, - diF/dt = 1100 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
Qr
2,60
4,90
µC
µC
Tvj = 25°C
Tvj = 125°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 25 A, - diF/dt = 1100 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
Erec
1,10
2,10
mJ
mJ
Tvj = 25°C
Tvj = 125°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,50 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,32 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 125 °C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues min. typ. max.
额定电阻值
Ratedresistance TC = 25°C R25 5,00 kΩ
R100偏差
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
耗散功率
Powerdissipation TC = 25°C P25 20,0 mW
B-值
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-值
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 t.b.d. K
B-值
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 t.b.d. K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
3
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min VISOL 2,5 kV
模块基板材料
Materialofmodulebaseplate Cu
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) AI203
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 10,0
mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 7,5
mm
相对电痕指数
Comperativetrackingindex CTI > 225
min. typ. max.
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,02 K/W
杂散电感,模块
Strayinductancemodule LsCE 19 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE' 2,50 mΩ
储存温度
Storagetemperature Tstg -40 125 °C
模块安装的安装扭距
Mountingtorqueformodulmounting 螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm
重量
Weight G180 g
4
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
5
10
15
20
25
30
35
40
45
50
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=36Ω,RGoff=36Ω,VCE=600V
IC [A]
E [mJ]
0 5 10 15 20 25 30 35 40 45 50
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
5
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=25A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,01
0,1
1
ZthJC : IGBT
i:
ri[K/W]:
τi[s]:
1
0,0978
0,002345
2
0,3905
0,0282
3
0,2198
0,1128
4
0,1519
0,282
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=36Ω,Tvj=125°C
VCE [V]
IC [A]
0 200 400 600 800 1000 1200 1400
0
10
20
30
40
50
60
IC, Modul
IC, Chip
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
6
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=36Ω,VCE=600V
IF [A]
E [mJ]
0 5 10 15 20 25 30 35 40 45 50
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
Erec, Tvj = 125°C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=25A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160
0,0
0,5
1,0
1,5
2,0
2,5
Erec, Tvj = 125°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,01
0,1
1
10
ZthJC : Diode
i:
ri[K/W]:
τi[s]:
1
0,152
0,003333
2
0,985
0,03429
3
0,283
0,1294
4
0,0898
0,7662
7
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
I n f i n e o n
8
技术信息/TechnicalInformation
FS25R12KT3
IGBT-模块
IGBT-modules
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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application.
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characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.