Issue 1 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN2B03E6
20V SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive capability
• SOT23-6 package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device marking
2B3
V(BR)DSS RDS(on) (⍀)I
D (A)
20
0.040 @ VGS= 4.5V 5.4
0.055 @ VGS= 2.5V 4.6
0.075 @ VGS= 1.8V 4.0
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMN2B03E6TA 7 8 3,000
D
S
G
D
D
G
Top view
D
D
S
ZXMN2B03E6
Issue 1 - September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage VDSS 20 V
Gate-source voltage VGS ± 8 V
Continuous drain current @ VGS= 4.5V; Tamb=25°C(b) ID5.4 A
@ VGS= 4.5V; Tamb=70°C(b) 4.3
@ VGS= 4.5V; Tamb=25°C(a) 4.3
Pulsed drain current(c) IDM 26 A
Continuous source current (body diode)(b) IS2.8 A
Pulsed source current (body diode)(c) ISM 26 A
Power dissipation at Tamb =25°C(a) PD1.1 W
Linear derating factor 8.8 mW/°C
Power dissipation at Tamb =25°C(b) PD1.7 W
Linear derating factor 13.7 mW/°C
Operating and storage temperature range Tj, Tstg -55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient(a) R⍜JA 113 °C/W
Junction to ambient(b) R⍜JA 73 °C/W
ZXMN2B03E6
Issue 1 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V(BR)DSS 20 V ID= 250A, VGS=0V
Zero gate voltage drain current IDSS 1AV
DS= 20V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±8V, VDS=0V
Gate-source threshold voltage VGS(th) 0.4 1.0 V ID= 250A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
RDS(on) 0.040 ⍀VGS= 4.5V, ID= 4.3A
0.055 ⍀VGS= 2.5V, ID= 3.7A
0.075 ⍀VGS= 1.8V, ID= 3.2A
Forward transconductance(*) (‡) gfs 13.5 S VDS= 10V, ID= 4.3A
Dynamic(‡)
Input capacitance Ciss 1160 pF VDS= 10V, VGS=0V
f=1MHz
Output capacitance Coss 210 pF
Reverse transfer capacitance Crss 136 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time td(on) 4.2 ns VDD= 10V, VGS= 4.5V
ID= 1A
RG ≈ 6.0⍀
Rise time tr 6.2 ns
Turn-off delay time td(off) 33.9 ns
Fall time tf12.4 ns
Total gate charge Qg14.5 nC VDS= 10V, VGS= 4.5V
ID= 4.3A
Gate-source charge Qgs 2nC
Gate drain charge Qgd 2.8 nC
Source-drain diode
Diode forward voltage(*) VSD 0.67 0.95 V Tj=25°C, IS= 1.8A,
VGS=0V
Reverse recovery time(‡) trr 10.8 ns Tj=25°C, IF= 2.8A,
di/dt=100A/s
Reverse recovery charge(‡) Qrr 3.4 nC
ZXMN2B03E6
Issue 1 - September 2006 6 www.zetex.com
© Zetex Semiconductors plc 2006
Typical characteristics
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
VGS
VGS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on)
t(on)
td(on) trtr
td(off)
VDS
VCC
RD
RG
VDS
ID
IG
ZXMN2B03E6
Issue 1 - September 2006 8 www.zetex.com
© Zetex Semiconductors plc 2006
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package outline - SOT23-6
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
DIM Millimeters Inches
Min. Max. Min. Max.
A 0.90 1.45 0.354 0.0570
A1 0.00 0.15 0.00 0.0059
A2 0.90 1.30 0.0354 0.0511
b 0.35 0.50 0.0078 0.0196
C 0.09 0.26 0.0035 0.0102
D 2.70 3.10 0.1062 0.1220
E 2.20 3.20 0.0866 0.1181
E1 1.30 1.80 0.0511 0.0708
L 0.10 0.60 0.0039 0.0236
e 0.95 REF 0.0374 REF
e1 1.90 REF 0.0748 REF
L 0° 30° 0° 30°
