Features e Patented free-floating silicon technology es ae Doc. No. 5SYA 1018-02 Dec.95 e Designed for traction, energy and industrial applications @ Optimum power handling capability Blocking Part number | 5STP 27L1800 5STP 27L1600 5STP 27L1200 Conditions Vorm Varo 1800 V 1600 V 1200 V f =50Hz, tp =10ms Verso 2000 V 1800 V 1400 V tp= Sms, single pulse lorm < 200 mA Vorm IRRM < 200 mA VeRM Ty = 125C dv/dfcrit 1000 V/ys @ Exp.to 0.67xVpr Mechanical data Fr | Mounting force nom 50 kN min 45 kN ose Removable connectors max | 60 kN ae , ETFE * | Device clamped 100 mis* m Weight 1.35 kg Fastan connectors Ds Surface creepage distance 35 mm Dz Air strike distance 14mm ABB Semiconductors AG 73ABB Semiconductors AG 5STP 27L1800 On-state Itavu Max. average on-state current 2700 A Half sine wave, T= 70C ltrs | Max. RMS on-state current 4230 A ITsm Max. peak non-repetitive 47000 A tp = 10ms surge current 50000 A tp = 8.3 ms Pt Limiting load integral 11045 kA?s | tp = 10 ms 10375 kA?s | tp =8.3ms Ty = 125C Vr On-state voltage 1.21 V Ir = 3000A Vro Threshold voltage 0.88 V Ir Slope resistance 0.103 mQ | {7 = 2000 - 6000 A hy Holding current 20-70 MA | Ty = 25C 15-60 mA | Tj = 125C IL Latching current 80-300 mA | Wyj= 25C . 70-250 mA | Ty = 125C Switching di/dtcit | Critical rate of rise of on-state 150 A/us | Cont. Vp < 0.67x Vorm Fy = 125C current Inzm = 3000A f = 50Hz 300 A/us | 60 sec. kee = 20A t= 0.5ps ty Delay time < 3.0 us | Vp =0.4xVporm [leg = 2.0A ft,= 0.5us ty Turn-off time < 400 us | Yo $0.67xVorm |/trm = 3000A Ty = 125C dv) /dt=20V/us|!Vr > 200V Q Recovery charge min 3000 pAs di, /dt= -20 A/us max 7000 yAs Triggering Ver Gate trigger voltage 2.6V Ty = 25C lot Gate trigger current 400 mA_ | Ty = 25C Veo Gate non-trigger voltage 0.3V |Yo=0.4xVorm ep Gate non-trigger DC current 10 mA | Vp = 0.4xVormy Veco Peak forward gate voltage 12 V leom Peak forward gate current 10A Veco Peak reverse gate voltage 10 V Po Gate power losses 3W Doc. No. 5SYA 1018-02 Dec.95ABB Semiconductors AG 5STP 27.1800 Thermal Ty max |Max. junction temperature 125 C Tyj stg Storage temperature range -40.. ..150C Rthsc Thermal resistance junction 24 K/kW_ | Anode side cooled to case 24 K/kW | Cathode side cooled 12 K/kW | Double side cooled RihcH | Thermal resistance case to 10 K/kW | Single side cooled heat sink 5 K/kW_ | Double side cooled Lint (K/kW) 16 ; 14-11780 sin add. 1 K/kW Analytical function for transient thermal impedance: 12 4| 180 m add. 1 K/kW 120 ri add. 1 K/kW Qo 4 10+} 60 Madd. 2 K/kW _ -UT; 8 = . _ i Linsc > Ri(1 e ) 6 i=1 , j 1 2 3 4 2 : R; (KAW) | 0.0053 | 0.0051 | 0.0016 4 > , 5 , 2 10 5 10 5 10 5 10 5 10 5 10 t; (Ss) 2.1838 | 0.4151 | 0.0324 t(s) Fig.1 Transient thermal impedance, junction to case. 1, (A) 7500 7000 6500 6000 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 g 0 0.60.7 08 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 V; (V) 1, (kA) 40 35 VN 30 25 min 20 15 10 S5STP 2741800 1 2 6 V, (V) Fig.2 On-state characteristics. Fig.3 On-state characteristics. Doc. No. 5SYA 1018-02 ODec.95 75ABB Semiconductors AG P, (W) 4800 4400 4000 3600 3200 2800 2400 2000 1600 1200 800 400 Ty= 125C 0 500 1000 1500 2000 2500 3000 3500 ray (A) 5STP 27L1800 Tease (C) 130 Double sided cooling 125 120 115 \\ 110 N \ N 105 N \ \ 100 N dC Y NX 77] 180 n TT K 180 sine 95 > H 120 TL fs | 90 LC . WEN WAN \ 70 A 500 1000 1500 2000 2500 3000 3500 4000 Irav (A} 75 SSTP 2741800 Fig.4 On-state power loss vs mean on-state current. Turn-on losses excluded. Fig.5 Max. permissible case temperature vs mean on-state current. Liem (KA) It(MAs) 100 ee ~SSTP 271900 BO) Viena! Pt 90 1.V,= 0 3.V,= 0 i. 45 2. Va 0.6%Vanm 4. Ve= 0.6XVan 80 \ i 40 70 \ 35 \ 60 2 30 N NJ y 50 N 25 N N V 3 40 N \Q Va A 20 KOS y 4 30 AS = 15 ~~] fd 20 _ a 10 Lenser potent i eee 10 5 0 0 1 2 5 10 20 50 100 t, (ms) Vesny (KA) 1 2 10 20 50 1006 ny Fig.6 Surge on-state current vs pulse length. Half-sine wave. Fig.7 Surge on-state current vs number of pulses. Half-sine wave, 10ms, 50Hz. 76 Doc. No. 5SYA 1018-02 Dec.95ABB Semiconductors AG 5STP 27L1800 Veo (V) 4.0 3.0 2.0 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 leq (A) Veg (V) 7 - + - - 75W tan = 7 7 7 20W tomax = Tms = 10ms Oo - NW Pa Oo o 1 2 3 4 5 6 7 8 9g 10 leq (A) Fig.8 Gate trigger characteristics. Fig.9 Max. peak gate power loss. O (wAs} 10 7 ban = 3000A 5 LT = Tame 4 3 2 10 7 5 4 1 2 3.45 7 10 20 30 -di,/dt (A/ys} sla (AI 10 NW oN N 10 Ny & ON 10 1 2 3.94 5 7 10 20 30 -di,/dt (A/ys) Fig.10 Recovery charge vs decay rate of on-stat current. Fig.11 Peak reverse recovery current vs decay rate of on-state current. Doc. No. 5SYA 1018-02 Dec.95 77