MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS *Collector-Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc *Low Collector-Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc *High Current-Gain - Bandwidth Product fT = 65 MHz (Min) @ IC = 100 mAdc *Annular Construction for Low Leakage ICBO = 100 nAdc @ Rated VCB *Pb-Free Packages are Available* TO-225 CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector-Base Voltage VCB 25 Vdc Emitter-Base Voltage VEB 8.0 Vdc IC 5.0 10 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 0.12 W mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 1.5 0.012 W mW/_C TJ, Tstg -65 to +150 _C Collector-Emitter Voltage Collector Current - Continuous - Peak Operating and Storage Junction Temperature Range ORDERING INFORMATION MJE200 Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 8.34 _C/W Thermal Resistance, Junction-to-Ambient qJC 83.4 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. July, 2007 - Rev. 12 Y = Year WW = Work Week JE2x0 = Device Code x = 0 or 1 G = Pb-Free Package Device THERMAL CHARACTERISTICS (c) Semiconductor Components Industries, LLC, 2007 YWW JE2x0G 1 MJE200G MJE210 Package Shipping TO-225 TO-225 (Pb-Free) 500 Units/Box 500 Units/Box TO-225 500 Units/Box MJE210G TO-225 (Pb-Free) 500 Units/Box MJE210T TO-225 50 Units/Rail TO-225 (Pb-Free) 50 Units/Rail MJE210TG Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJE200/D MJE200 - NPN, MJE210 - PNP IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 25 - Vdc - 100 100 nAdc mAdc - 100 70 45 10 180 - - 0.3 0.75 1.8 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125_C) ICBO Emitter Cutoff Current (VBE = 8.0 Vdc, IC = 0) IEBO nAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 5.0 Adc, VCE = 2.0 Vdc) hFE - Collector-Emitter Saturation Voltage (Note 1) (IC = 500 mAdc, IB = 50 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 5.0 Adc, IB = 1.0 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (Note 1) (IC = 5.0 Adc, IB = 1.0 Adc) VBE(sat) - 2.5 Vdc Base-Emitter On Voltage (Note 1) (IC = 2.0 Adc, VCE = 1.0 Vdc) VBE(on) - 1.6 Vdc fT 65 - MHz - 80 120 DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF MJE200 MJE210 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 T, TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 140 0 160 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2.0%. 2. fT = hfe* ftest. MJE200 - NPN, MJE210 - PNP VCC +30 V 1K 500 300 200 RC 25 ms +11 V SCOPE RB 100 t, TIME (ns) 0 D1 51 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% td -4 V 50 30 20 tr 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA MJE200 MJE210 1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 qJC(t) = r(t) qJC qJC = 8.34C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.1 0.07 0.05 0.01 0.03 0 (SINGLE PULSE) 3 5 10 Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 VCC = 30 V IC/IB = 10 TJ = 25C 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 3 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) MJE200 - NPN, 10 7.0 5.0 1.0ms 3.0 dc MJE210 - PNP There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 500ms 5.0ms 2.0 TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1.0 0.7 0.5 0.3 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 30 Figure 5. Active Region Safe Operating Area 10K 200 ts t, TIME (ns) 1K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C TJ = 25C C, CAPACITANCE (pF) 5K 3K 2K 500 300 200 100 tf 50 30 20 MJE200 MJE210 10 0.01 Cib 100 70 50 Cob MJE200 (NPN) MJE210 (PNP) 30 0.2 0.3 0.5 1 2 3 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) 5 20 0.4 0.6 10 Figure 6. Turn-Off Time 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 20 40 MJE200 - NPN, MJE210 - PNP NPN MJE200 400 TJ = 150C 25C 200 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 400 PNP MJE210 -55C 100 80 60 40 VCE = 1.0 V VCE = 2.0 V 20 0.05 0.07 0.1 TJ = 150C 200 25C 100 80 -55C 60 40 VCE = 1.0 V VCE = 2.0 V 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 20 0.05 0.07 0.1 5.0 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 Figure 8. DC Current Gain 2.0 2.0 TJ = 25C TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.4 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 3.0 5.0 +2.5 +2.0 V, TEMPERATURE COEFFICIENTS (mV/ C) V, TEMPERATURE COEFFICIENTS (mV/ C) Figure 9. "On" Voltage *APPLIES FOR IC/IB hFE/3 +1.5 +1.0 +0.5 25C to 150C qVC for VCE(sat) 0 -55C to 25C -0.5 -1.0 -1.5 -2.0 25C to 150C qVB for VBE -2.5 0.05 0.07 0.1 -55C to 25C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 +2.5 +2.0 *APPLIES FOR IC/IB hFE/3 +1.5 +1.0 +0.5 25C to 150C *qVC for VCE(sat) 0 -55C to 25C -0.5 25C to 150C -1.0 -1.5 qVB for VBE -2.0 -2.5 0.05 0.07 0.1 5.0 -55C to 25C IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 2.0 3.0 5.0 MJE200 - NPN, MJE210 - PNP PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -BU F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M -A1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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