HSM101 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HSM106 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Fast switching Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram MELF MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .205 (5.2) .190 (4.8) SOLDERABLE ENDS .028 (.60) .018 (.46) .106 (2.7) .095 (2.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS SYMBOL HSM101 HSM102 HSM103 HSM104 HSM105 HSM106 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 Volts Maximum RMS Volts VRMS 35 70 140 210 280 420 Volts VDC 50 100 200 300 400 600 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 50 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range IO 1.0 Amps 30 I FSM CJ Amps 15 T J , T STG 12 pF 0 -65 to + 175 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0A DC SYMBOL VF Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25oC Maximum Full Load Reverse Current Average, o Full Cycle .375" (9.5mm) lead length at TL = 55 C IR Maximum Reverse Recovery Time (Note 1) trr NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. HSM101 HSM102 HSM103 HSM104 HSM105 HSM106 1.0 1.3 1.70 5.0 Volts uAmps 100 50 UNITS uAmps 75 nSec 2001-4 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (V) 0 (+) -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm 1.0 T J = 25 .1 5 10 SM 3 10 01 6 ~H SM 1.0 .1 T J = 25 .01 Pulse Width = 300uS 1% Duty Cycle .001 .01 PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100125150175 AMBIENT TEMPERATURE ( FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 M1 T J = 100 0 HS T J = 150 10 INSTANTANEOUS FORWARD CURRENT, (A) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 100 0 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 70 60 8.3ms Single Half Sine-Wave (JEDEC Method) 50 40 30 20 10 0 JUNCTION CAPACITANCE, (pF) INSTANTANEOUS REVERSE CURRENT, (uA) 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms. ~H NOTES:1 Rise Time = 7ns max. Input Impedance = 1.0 04 OSCILLOSCOPE (NOTE 1) Single Phase Half Wave 60Hz Resistive or Inductive Load 10 1 NONINDUCTIVE -0.25A M1 PULSE GENERATOR (NOTE 2) 2.0 M D.U.T (+) 25 Vdc (approx) (V) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE HS 10 NONINDUCTIVE HS 50 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( HSM101 THRU HSM106 ) .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 HSM 10 T J = 25 6 4 101 ~HS HS M1 M10 5 06 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON )