TGA4521
1
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
Key Features
•
Frequency Range: 32 -
45 GHz
•
25 dBm Nominal Psat
@ 38 GHz
•
24 dBm P1dB @ 38 GHz
•
16 dB Nominal Gain @ 38 GHz
•
33 dBm OTOI @ 16dBm/Tone
•
Bias: 6 V @ 175 mA
Idq
•
0.15 um 3MI pHEMT Technology
•
Chip Dimensions 1.60 x 0.75 x 0.10 mm
(0.063 x 0.030 x 0.004 in)
Primary Applications
•
Digital Radio
•
Point-to-Point Radio
•
Point-to-Multipoint Communications
•
Military SAT-COM
Measured Fixtured
Data
Bias Conditions: Vd = 6 V, Idq
= 175 mA
19
20
21
22
23
24
25
26
27
32 34 36 38 40 42 44 46 48
Frequency (GHz)
Output Power (dBm)
Psat
P1dB
Product Description
The TriQuint TGA4521 is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint’s
0.15um power pHEMT production process.
The TGA4521 nominally provides 25 dBm
saturated output power, and 24 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 16 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4521 is 100% DC and RF tested on-wafer
to ensure performance compliance.
Lead-Free & RoHS
compliant.
Evaluation boards are available upon request.
-15
-10
-5
0
5
10
15
20
25
32 34 36 38 40 42 44 46 48
Frequency (GHz)
S-Parameters (dB)
Gain
IRL
ORL
32 –
45 GHz Wide Band Driver Amplifier
TGA4521
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
Vd Drain Voltage 6.5 V 2/
Vg Gate Voltage Range -2 TO 0 V
Id Drain Current 350 mA 2/ 3/
⏐Ig⏐Gate Current 9 mA 3/
PIN Input Continuous Wave Power 20 dBm
PDPower Dissipation See note 4/ 2/
TCH Operating Channel Temperature 150 0C5/ 6/
TMMounting Temperature (30 Seconds) 320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD
3/ Total current for the entire MMIC.
4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 0C – TBASE
0C) / 70 (0C/W)
Where TBASE is the base plate temperature.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
TGA4521
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
PARAMETER FREQUENCY (GHz) MIN TYPICAL UNITS
Frequency Range 32 - 45 GHz
Drain Voltage, Vd 6.0 V
Drain Current, Id 175 mA
Gate Voltage, Vg -0.7 V
32 14.5 20
36 - 38 15.5 17
Small Signal Gain, S21
44 14 17
dB
32 1 1.5
36 3.5 8
38 2.5 5
Input Return Loss, S11
44 2 3
dB
32 - 38 8 10
Output Return Loss, S22 44 4 10
dB
38 24 24.5
Output Power @ 1dB Gain Compression,
P1dB 32 - 45 23.5 dBm
Saturated Power, Psat 25 dBm
38 31 33
OTOI @ Pin = 1dBm 32 - 45 33 dBm
TABLE III
THERMAL INFORMATION
PARAMETER TEST CONDITIONS
T
CH
(
O
C)
R
θJC
(°C/W)
T
M
(HRS)
R
θJC
Thermal Resistance
(channel to Case)
Vd = 6 V
Id = 175 mA
Pdiss = 1.05 W
144
70
2.0E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TGA4521
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
28 30 32 34 36 38 40 42 44 46 48 50
Frequency (GHz)
Return Loss (dB)
0
2
4
6
8
10
12
14
16
18
20
22
24
28 30 32 34 36 38 40 42 44 46 48 50
Frequency (GHz)
Gain (dB)
Measured Data
Bias Conditions: Vd = 6 V, Idq
= 175 mA
ORL
IRL
TGA4521
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
4
6
8
10
12
14
16
18
20
22
24
26
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Pin (dBm)
Pout (dBm)
125
150
175
200
225
250
275
300
325
350
375
400
IDS (mA)
POUT
GAIN
IDS
18
19
20
21
22
23
24
25
26
27
28
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Frequency (GHz)
Output Power (dBm)
P1dB
Psat
Measured Data
Bias Conditions: Vd = 6 V, Idq
= 175 mA
Freq = 38 GHz
TGA4521
6
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
22
24
26
28
30
32
34
36
38
6 8 10 12 14 16 18 20 22 24
Output Power / tone
OTOI (dBm)
37 GHz
38 GHz
39 GHz
40 GHz
Measured Data
Bias Conditions: Vd = 6 V, Idq
= 175 mA, Δf=10MHz
-50
-45
-40
-35
-30
-25
-20
-15
-10
6 8 10 12 14 16 18 20 22 24
Out
p
ut Power / tone
IMD3 (dBc)
37 GHz
38 GHz
39 GHz
40 GHz
TGA4521
7
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
Mechanical Drawing
0
0
0.113
(0.004)
0.793
(0.031) 1.485
(0.058)
1.600
(0.063)
0.217
(0.009)
0.651
(0.026)
1.490
(0.059)
1.316
(0.052)
1.167
(0.046)
0.346
(0.014)
0.267
(0.011)
0.086
(0.003)
0.750
(0.030)
0.651
(0.026)
0.353
(0.014)
Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)
GND is back side of MMIC
Bond pad #1
Bond pad #2
Bond pad #3, 9
Bond pad #4, 5, 7
Bond pad #6
(RF In)
(N/C)
(Vg)
(Vd)
(N/C)
0.100 x 0.200
0.081 x 0.100
0.108 x 0.108
0.108 x 0.108
0.091 x 0.084
Bond pad #8 (RF Out) 0.100 x 0.200
(0.004 x 0.008)
(0.003 x 0.004)
(0.004 x 0.004)
(0.004 x 0.004)
(0.004 x 0.003)
(0.004 x 0.008)
A
BRC
1
3457
8
9
26
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4521
8
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
Recommended Chip Assembly Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Bias Conditions: Vd = 6 V
Vg = ~ -0.7 V to get 175mA Id
A
BRC
100pF
100pF
100pF
0.01μF
Vg
(Alternative Vg)
Vd
1.0μF
0.01μF
1.0μF
1.0μF
0.01μF
TFN
Vg
TFN
TGA4521
9
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
Component placement and adhesive attachment assembly notes:
•
Vacuum pencils and/or vacuum collets are the preferred method of
pick up.
•
Air bridges must be avoided during placement.
•
The force impact is critical during auto placement.
•
Organic attachment (i.e. epoxy) can be used in low-power applications.
•
Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
•
Use AuSn
(80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
•
An alloy station or conveyor furnace with reducing atmosphere should be used.
•
Do not use any kind of flux.
•
Coefficient of thermal expansion matching is critical for long-term reliability.
•
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
•
Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
•
Force, time, and ultrasonics
are critical bonding parameters.
•
Aluminum wire should not be used.
•
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Assembly Process Notes
Ordering Information
Part Package Style
TGA4521 GaAs
MMIC Die
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
