Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Zetex plc 1995
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms 10ms 100ms 10s 100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp D=t1
tp
Single Pulse
Derating curve
T -Temperature (°C)
Max Power Dissipation - (Watts)
-40
0.50
0.25
1.0
0.75
040 80 120 200160
Ambient temperature
SPICE PARAMETERS
*ZETEX ZTX1053A Spice model Last revision 19/01/95
*
.MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+ CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+ VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
*V
CEO=75V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuits
* DC-DC Convertors
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX1053A UNIT
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 75 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 10 A
Continuous Collector Current IC3A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature
Range
Tj:Tstg -55 to +200 °C
ZTX1053A
C
B
E
E-Line
TO92 Compatible
ZTX1053A
ZTX1053AZTX1053A
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150 245 V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES 150 245 V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO 75 100 V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV 150 245 V IC=100µA, VEB=1V
Emitter-Base
Breakdown Voltage
V(BR)EBO 5 8.8 V IE=100µA
Collector Cut-Off Current ICBO 0.3 10 nA VCB=120V
Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V
Collector Emitter Cut-Off
Current
ICES 0.3 10 nA VCES=120V
Collector-Emitter Saturation
Voltage
VCE(sat) 17
120
180
25
150
250
mV
mV
mV
IC=0.2A, IB=20mA*
IC=1A, IB=10mA*
IC=3A, IB=100mA*
Base-Emitter
Saturation Voltage
VBE(sat) 900 1000 mV IC=3A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on) 825 950 mV IC=3A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE 260
300
100
420
450
150
15
1200
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency fT140 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo 21 30 pF VCB=10V, f=1MHz
Switching Times
ton 90 ns IC=2A, IB=20mA, VCC=50V
toff 750 ns IC=2A, IB=±20mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
1mA
1mA 10mA
1mA 100mA 1A 10A
10mA
1mA 100mA 1A 10A
10mA
1mA 100mA 1A 10A
+25°C
+100°C
-55°C
+25°C
-55°C
+175°C
+100°C
100
200
300
400
500
600
700
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.20.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
1.2
10A1A100mA10mA
10mA 100mA 1A 10A
100V10V
0.1V 1V
10
0.1
0.01
1
IC-Collector Current
hFE v ICVBE(sat) v Ic
VBE(on) v IC
VCE(sat) v IC
IC-Collector Current
VCE(sat) v IC
IC-Collector Current
IC-Collector Current
Single Pulse Test Tamb=25C
VCE - Collector VoltageIC-Collector Current
Safe Operating Area
+25°C
I
C
/I
B
=10
I
C
/I
B
=30
I
C
/I
B
=100
I
C
/I
B
=30
+100°C
+175°C
+25°C
-55°C
I
C
/I
B
=30
V
CE
=2V
V
CE
=2V
DC
1s
100ms
10ms
1ms
100us
+175°C
+100°C
+25°C
-55°C
TYPICAL CHARACTERISTICS
ZTX1053AZTX1053A
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150 245 V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES 150 245 V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO 75 100 V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV 150 245 V IC=100µA, VEB=1V
Emitter-Base
Breakdown Voltage
V(BR)EBO 5 8.8 V IE=100µA
Collector Cut-Off Current ICBO 0.3 10 nA VCB=120V
Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V
Collector Emitter Cut-Off
Current
ICES 0.3 10 nA VCES=120V
Collector-Emitter Saturation
Voltage
VCE(sat) 17
120
180
25
150
250
mV
mV
mV
IC=0.2A, IB=20mA*
IC=1A, IB=10mA*
IC=3A, IB=100mA*
Base-Emitter
Saturation Voltage
VBE(sat) 900 1000 mV IC=3A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on) 825 950 mV IC=3A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE 260
300
100
420
450
150
15
1200
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency fT140 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo 21 30 pF VCB=10V, f=1MHz
Switching Times
ton 90 ns IC=2A, IB=20mA, VCC=50V
toff 750 ns IC=2A, IB=±20mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
1mA
1mA 10mA
1mA 100mA 1A 10A
10mA
1mA 100mA 1A 10A
10mA
1mA 100mA 1A 10A
+25°C
+100°C
-55°C
+25°C
-55°C
+175°C
+100°C
100
200
300
400
500
600
700
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.20.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
1.2
10A1A100mA10mA
10mA 100mA 1A 10A
100V10V
0.1V 1V
10
0.1
0.01
1
IC-Collector Current
hFE v ICVBE(sat) v Ic
VBE(on) v IC
VCE(sat) v IC
IC-Collector Current
VCE(sat) v IC
IC-Collector Current
IC-Collector Current
Single Pulse Test Tamb=25C
VCE - Collector VoltageIC-Collector Current
Safe Operating Area
+25°C
I
C
/I
B
=10
I
C
/I
B
=30
I
C
/I
B
=100
I
C
/I
B
=30
+100°C
+175°C
+25°C
-55°C
I
C
/I
B
=30
V
CE
=2V
V
CE
=2V
DC
1s
100ms
10ms
1ms
100us
+175°C
+100°C
+25°C
-55°C
TYPICAL CHARACTERISTICS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Zetex plc 1995
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms 10ms 100ms 10s 100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp D=t1
tp
Single Pulse
Derating curve
T -Temperature (°C)
Max Power Dissipation - (Watts)
-40
0.50
0.25
1.0
0.75
040 80 120 200160
Ambient temperature
SPICE PARAMETERS
*ZETEX ZTX1053A Spice model Last revision 19/01/95
*
.MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+ CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+ VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
*V
CEO=75V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuits
* DC-DC Convertors
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX1053A UNIT
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 75 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 10 A
Continuous Collector Current IC3A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature
Range
Tj:Tstg -55 to +200 °C
ZTX1053A
C
B
E
E-Line
TO92 Compatible
ZTX1053A