TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●40 W at 25°C Case Temperature
●3 A Continuous Collector Current
●5 A Peak Collector Current
●Customer-Specified Selections AvailableB
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)TIP31D
TIP31E
TIP31FVCBO
160
180
200V
Collector-emitter voltage (IB = 0)TIP31D
TIP31E
TIP31FVCEO
120
140
160V
Emitter-base voltageVEBO5V
Continuous collector current IC3A
Peak collector current (see Note 1)ICM5A
Continuous base current IB1A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot40W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot2W
Unclamped inductive load energy (see Note 4)½LIC232mJ
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL250°C
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = 30 mA
(see Note 5)IB = 0TIP31D
TIP31E
TIP31F
120
140
160V
ICESCollector-emitter
cut-off current
VCE=160 V
VCE=180 V
VCE=200 V
VBE =0
VBE =0
VBE =0
TIP31D
TIP31E
TIP31F
0.2
0.2
0.2mA
ICEOCollector cut-off
currentVCE= 90 VIB=00.3mA
IEBOEmitter cut-off
currentVEB = 5 VIC=0 1 mA
hFEForward current
transfer ratioVCE = 4 V
VCE = 4 VIC= 1A
IC= 3A(see Notes 5 and 6)25
5
VCE(sat)Collector-emitter
saturation voltageIB = 750 mAIC= 3A(see Notes 5 and 6)2.5V
VBEBase-emitter
voltageVCE = 4 VIC= 3 A(see Notes 5 and 6)1.8V
hfeSmall signal forward
current transfer ratioVCE = 10 VIC=0.5Af = 1 kHz20
|hfe|Small signal forward
current transfer ratioVCE = 10 VIC=0.5Af = 1 MHz3
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance3.125°C/W
RθJAJunction to free air thermal resistance62.5°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETERTEST CONDITIONS †MINTYPMAXUNIT
ton Turn-on timeIC = 1 A
VBE(off) = -4.3 VIB(on) = 0.1 A
RL = 30 ΩIB(off) = -0.1 A
tp = 20 µs, dc ≤ 2%0.5µs
toffTurn-off time 2 µs
3
AUGUST 1978 - REVISED MARCH 1997
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·001 0·01 0·1 1·0 10
hFE - DC Current Gain
10
100
1000 TCS631AA
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - mA
0·1 1·0 10 100 1000
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·01
0·1
1·0
10 TCS631AB
IC = 100 mA
IC = 300 mA
IC = 1 A
IC = 3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·01 0·1 1·0 10
VBE - Base-Emitter Voltage - V
0·5
0·6
0·7
0·8
0·9
1·0 TCS631AC
VCE = 4 V
TC = 25°C
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0·1
1·0
10
100 SAS631AB
TIP31D
TIP31E
TIP31F
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
025 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50 TIS631AA
5
AUGUST 1978 - REVISED MARCH 1997
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
123
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
6
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
