VVZB135-16ioXT
14/15
24/25
10/11
6/7
NTC
30 29 45/46
41
3
21/22
38
36
34
48/4940
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC
Thyristor Module
Part number
VVZB135-16ioXT
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● 3~ Rectifier with brake unit
for drive inverters
E2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
RRM
1600
I 150
FSM
700
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I 120
CE(sat)
1.8
C25
V= V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB135-16ioXT
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.32
R0.65 K/W
min.
150
VV
100T = 25°C
VJ
T = °C
VJ
mA20V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
190 WT = 25°C
C
50
1600
forward voltage drop
total power dissipation
Conditions
Unit
1.92
T = 25°C
VJ
150
V
T0
V0.88T = °C
VJ
150
r
T
7.3 mΩ
V1.26T = °C
VJ
I = A
T
V
50
1.96
I = A150
I = A150
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
32
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
700
755
1.77
1.73
A
A
A
A
595
645
2.45
2.37
1600
300 µs
DAV
d =rectangular ⅓
bridge output current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.4 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
80 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
5 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 50 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 50 A
T
125
R
thCH
0.10
thermal resistance case to heatsink
K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB135-16ioXT
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
120
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
min.
Conditions
Unit
84
V
V
CE(sat)
total power dissipation
390 W
collector emitter leakage current
6.5 V
turn-on delay time
70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
225
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.1
2.1
6.05.5
mA
0.6 mA
0.2
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
230 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
6.8 mJ
8.3 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
300 A
R
thJC
thermal resistance junction to case
0.15
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.75
V
VJ
1.99T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0.25
mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
1.8 µC
23 A
150 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
R
R
thJC
thermal resistance junction to case
0.9 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
75
3
75
75
30
30
10
10
10
600
900
400
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink
0.32
K/W
0.3
R
thCH
thermal resistance case to heatsink
K/W
Brake IGBT
Brake Diode
600 V
80
80
80
80
nA
V = V
CEK
1200
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB135-16ioXT
Ratings
XXXXXXXXXX yywwx
Logo UL Part number Date Code
2D Data Matrix
Location
Package
T
op
°C
M
D
Nm6
mounting torque
3
T
VJ
°C150
virtual junction temperature
-40
Weight g176
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
125-40
terminal to terminal
E2-Pack
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
0 25 50 75 100 125 150
102
103
104
10
5
R
[
]
Typ. NTC resistance vs. temperature
TC[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VVZB135-16ioXT 510134Box 6VVZB135-16ioXTStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.88
mΩ
V
0 max
R
0 max
slope resistance *
4.1
1.1
17.9
1.31
8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor Brake
IGBT
Brake
Diode
150 °C
* on die level
T = 25°
resistance
kΩ
5.25
K
VJ
3375
R
25
B
25/50
54.75
temperature coefficient
Symbol
Definition
typ.
max.
min.
Conditions
Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB135-16ioXT
107,5
±0,3
93
±0,2
79,2
45
±0,2
32
±0,2
11
0
44 3543 42 41 40 39 38 37 36 2634 33 32 31 30 29 28 27
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
61,74
65,55
31,26
19,83
50.31
20,6
±0,5
17
±0,5
3,5
±0,5
35,07
46,50
Vor der Montage typ. 100 µm konvex über 75 mm
Before mounting typ. 100 µm convex over 75 mm
65,55
27,45
50,31
42,69
23,64
35,07
69,36
A
D
0,8
±0,05
15° ±1°
Detail D
C
0,8
±0,2
1,2
±0,05
Detail C
15.24
11.43
7.62
11.43
25
24
23
22
21
20
11,43
7,62
11,43
0
45
46
47
50
49
48
Ø 5,5
+0,1 - 0,3
41,90
Index
Bemerkung /
Note:
-
Nichttolerierte Maße nach /
Measure without tolerances according DIN ISO 2768-T1-m
- PCB-Lochmuster / PCB hole pattern: see pin position
- Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: 0.1
- Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024
Detail A:PCB-Montage /
Mounting on PCB
- Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® (Größe / size: K25
)
- Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe /
hole depth)
- Empfohlenes Drehmoment / Recommended mounting torque:1.5 Nm
6
Detail
A
Ø 6 Ø 2,5
-0,3
Ø 2,1
-0,3
1,5 +0,3
15.24
14/15
24/25
10/11
6/7
NTC
30 29 45/46
41
3
21/22
38
36
34
48/4940
Outlines E2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB135-16ioXT
0.001 0.01 0.1 1
200
300
400
500
6
0
0
2 3 4 5 6 7 8 9
1
100
1000
10
0
00
0 20 40 60
0
20
40
60
80
100
0 50 100 150 1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
I
2
t
[A
2
s]
I
FSM
[A]
t [s]
P
tot
[W]
I
T(AV)M
[A] T
amb
[°C] t [ms]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
I
T(AV)M
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.5 1.0 1.5 2.0
0
40
80
120
160
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
= 125°C
T
VJ
= 25°C
t [ms]
T
C
[°C]
T
VJ
= 150°C
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
Fig. 3 I
2
t vs. time per thyristor
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
Fig. 5 Max. forward current vs.
case temperature per thyristor
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
Constants for Z
thJC
calc.:
i R
th
(K/W) t
i
(s)
1 0.080 0.004
2 0.030 0.010
3 0.160 0.025
4 0.160 0.400
5 0.247 0.090
10 100 1000
1
10
100
1000
1 10 100 1000 10000
0.1
1
10
I
G
[mA]
V
G
[V]
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
t
gd
[µs]
I
G
[mA]
typ. Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
2
1
3
6
4
5
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB135-16ioXT
0 1 2 3
0
25
50
75
100
125
1
5
0
0 40 80 120 160
0
4
8
12
16
01234
0
25
50
75
100
125
150
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11V
5 6 7 8 9 10 11 12 13
0
25
50
75
100
125
1
5
0
0 100 200 300
0
5
10
15
20
T
VJ
= 125°C
13V
8 12 16 20 24
5
6
7
8
9
10
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
E
on
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[Ohm]
E
[mJ]
I
C
[A]
V
GE
= 15 V
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
t [s]
Z
thJC
[K/W]
Fig. 7 Typ. transient thermal impedance junction to case
I
C
= 75 A
V
CE
= 600 V
E
on
I
C
= 75 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
= 10 Ohm
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
off
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB135-16ioXT
200 600 10000 400 800
120
140
160
180
200
220
0.001 0.01 0.1 1
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000 400 800
0
10
20
30
40
50
60
100 1000
0
1
2
3
4
5
0 1 2 3
0
10
20
30
40
50
60
70
80
K
f
T
VJ
[°C]
t [s]
V
FR
[V]
I
RM
[A]
Q
r
[µC]
I
F
[A]
V
F
[V] -di
F
/dt [A/µs]
t
rr
[ns]
Z
thJC
[K/W]
V
FR
t
rr
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
F
i
g
.
7
T
r
an
s
i
e
n
t
t
he
r
m
a
l
i
m
pe
d
an
c
e
j
un
c
t
i
o
n
t
o
c
a
s
e
t
rr
[µs]
I
F
= 60 A
30 A
15 A
I
F
= 60 A
30 A
15 A
I
RM
Q
R
I
F
= 60 A
30 A
15 A
T
VJ
= 125°C
V
R
= 800 V
T
VJ
= 125°C
V
R
= 800 V
-di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 800 V
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
T
VJ
= 125°C
I
F
= 30 A
T
VJ
= 125°C
25°C
i Riti
[K/W] [s]
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20171130eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
