IRFB4115PbF HEXFET(R) Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS(on) typ. max. ID (Silicon Limited) G S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l RoHS Compliant, Halogen-Free Base Part Number Package Type IRFB4115PbF TO-220 150V 9.3m 11m 104A D G D S TO-220AB G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Orderable Part Number IRFB4115PbF Absolute Maximum Ratings Symbol ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw e dv/dt TJ TSTG Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy Thermal Resistance Symbol RJC RCS RJA Parameter j ij 1 www.irf.com (c) 2014 International Rectifier A W W/C V V/ns C 300 x x 10lb in (1.1N m) d Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Units 104 74 420 380 2.5 20 18 -55 to + 175 830 mJ Typ. Max. Units --- 0.50 --- 0.40 --- 62 C/W Submit Datasheet Feedback November 11, 2014 IRFB4115PbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Min. Typ. Max. Units 150 --- --- 3.0 --- --- --- --- --- --- 0.18 9.3 --- --- --- --- --- 2.3 --- --- 11 5.0 20 250 100 -100 --- V V/C m V A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 3.5mA VGS = 10V, ID = 62A VDS = VGS, ID = 250A VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V c f Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Conditions Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) 97 --- --- --- --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Input Capacitance --- Output Capacitance --- Reverse Transfer Capacitance --- Effective Output Capacitance (Energy Related) --- Effective Output Capacitance (Time Related) --- --- 77 28 26 51 18 73 41 39 5270 490 105 460 530 --- 120 --- --- --- --- --- --- --- --- --- --- --- --- S nC VDS = 50V, ID = 62A ID = 62A VDS = 75V VGS = 10V ID = 62A, VDS =0V, VGS = 10V VDD = 98V ID = 62A RG = 2.2 VGS = 10V VGS = 0V VDS = 50V = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 120V , See Fig. 11 VGS = 0V, VDS = 0V to 120V f ns pF f h g Diode Characteristics Symbol IS Parameter VSD trr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM d Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max EAS limit, starting TJ = 25C, L = 0.17mH, RG = 25, IAS = 100A, VGS =15V. ISD 62A, di/dt 1040A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. 2 www.irf.com (c) 2014 International Rectifier Conditions Min. Typ. Max. Units --- --- 104 A --- --- 420 A MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 62A, VGS = 0V TJ = 25C VR = 130V, IF = 62A TJ = 125C TJ = 25C di/dt = 100A/s TJ = 125C TJ = 25C f D S --- --- 1.3 V --- 86 --- ns --- 110 --- --- 300 --- nC --- 450 --- --- 6.5 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. Submit Datasheet Feedback November 11, 2014 IRFB4115PbF 1000 1000 100 BOTTOM 100 10 1 5.0V BOTTOM 5.0V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.1 0.1 1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 T J = 175C 100 T J = 25C 10 1 VDS = 50V 60s PULSE WIDTH 0.1 ID = 62A VGS = 10V 2.5 2.0 1.5 1.0 0.5 2 4 6 8 10 12 14 16 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 10000 Ciss C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Coss 1000 Crss 100 10 ID= 62A 12.0 VDS= 120V VDS= 75V VDS= 30V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V www.irf.com (c) 2014 International Rectifier 0 20 40 60 80 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 11, 2014 IRFB4115PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175C 100 10 T J = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 100 10msec 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 VSD, Source-to-Drain Voltage (V) 80 60 40 20 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) ID, Drain Current (A) 100 50 1000 200 Id = 3.5mA 190 180 170 160 150 140 -60 -40 -20 0 20 40 60 80 100120140160180 T C , Case Temperature (C) T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 6.0 VGS(th) , Gate threshold Voltage (V) 6.0 5.0 4.0 Energy (J) 100 Fig 8. Maximum Safe Operating Area 120 25 10 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 3.0 2.0 1.0 0.0 5.0 4.0 3.0 ID = 250A ID = 1.0mA ID = 1.0A 2.0 1.0 -20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 1msec DC www.irf.com (c) 2014 International Rectifier -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 12. Threshold Voltage vs. Temperature Submit Datasheet Feedback November 11, 2014 IRFB4115PbF Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 J R1 R1 J 1 1 R2 R2 2 C 2 C Ri (C/W) i (sec) 0.245 0.0059149 0.155 0.0006322 C i= i/R i Ci= i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart = 25C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 11, 2014 IRFB4115PbF 50 50 IF = 42A V R = 130V 40 TJ = 25C TJ = 125C 30 IRR (A) IRR (A) 40 IF = 62A V R = 130V 20 10 TJ = 25C TJ = 125C 30 20 10 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/s) 800 1000 Fig 16. - Typical Recovery Current vs. dif/dt 2500 3000 IF = 42A V R = 130V 2000 IF = 62A V R = 130V 2400 TJ = 25C TJ = 125C 1500 QRR (nC) QRR (nC) 600 diF /dt (A/s) Fig 15. - Typical Recovery Current vs. dif/dt 1000 500 TJ = 25C TJ = 125C 1800 1200 600 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/s) Fig 17. - Typical Stored Charge vs. dif/dt 6 400 www.irf.com (c) 2014 International Rectifier 400 600 800 1000 diF /dt (A/s) Fig 18. - Typical Stored Charge vs. dif/dt Submit Datasheet Feedback November 11, 2014 IRFB4115PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 19. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG 20V VGS + V - DD IAS A 0.01 tp I AS Fig 20a. Unclamped Inductive Test Circuit RD VDS Fig 20b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 21a. Switching Time Test Circuit tr t d(off) Fig 21b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V tf .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 22a. Gate Charge Test Circuit 7 www.irf.com (c) 2014 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 22b. Gate Charge Waveform Submit Datasheet Feedback November 11, 2014 IRFB4115PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE g PART NUMBER IRFB4115 PYWW? LC LC OR DATE CODE P = LEAD-FREE Y = LAST DIGIT OF YEAR WW = WORK WEEK ? = ASSEMBLY SITE CODE INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFB4115 YWWP LC LC DATE CODE Y = LAST DIGIT OF YEAR WW = WORK WEEK P = LEAD-FREE TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 11, 2014 IRFB4115PbF Qualification information Industrial Qualification level (per JEDEC JESD47F Moisture Sensitivity Level guidelines) TO-220 N/A Yes RoHS compliant Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Revision History Date 4/28/2014 11/6/2014 Comment * Updated data sheet with new IR corporate template. * Updated package outline & part marking on page 7. * Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1. * Updated typo on the Fig.16 and Fig.17, unit of Y-axis from "A" to "nC" on page 5. * Added Fig 14 - Typical Avalanche Current vs Pulsewidth on page 5. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 11, 2014