HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
V
DSS
150V
R
DS
(
on
)
typ. 9.3mΩ
max. 11mΩ
I
D
(Silicon Limited)
104A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
dv/dt Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case
j
––– 0.40
R
θCS
Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient
ij
––– 62
830
380
18
10lb
x
in (1.1N
x
m)
A
°C
300
-55 to + 175
± 20
2.5
Max.
104
74
420
IRFB4115PbF
GDS
Gate Drain Source
TO-220AB
D
S
D
G
Benefits
lImproved Gate, Avalanche and Dynamic dv/dt
Ruggedness
lFully Characterized Capacitance and Avalanche
SOA
lEnhanced body diode dV/dt and dI/dt Capability
lLead Free
lRoHS Compliant, Halogen-Free
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Form Quantity
IRFB4115PbF TO-220 Tube 50 IRFB4115PbF
Base Part Number Package Type Standard Pack Orderable Part Number
IRFB4115PbF
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Recommended max EAS limit, starting TJ = 25°C,
L = 0.17mH, RG = 25Ω, IAS = 100A, VGS =15V.
ISD ≤ 62A, di/dt ≤ 1040A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆V
(
BR
)
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 9.3 11 mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.3 ––– Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 97 ––– ––– S
Q
g
Total Gate Charge ––– 77 120 nC
Q
gs
Gate-to-Source Charge ––– 28 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 26 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)––– 51 –––
t
d(on)
Turn-On Delay Time ––– 18 ––– ns
t
r
Rise Time ––– 73 –––
t
d(off)
Turn-Off Delay Time ––– 41 –––
t
f
Fall Time ––– 39 –––
C
iss
Input Capacitance ––– 5270 ––– pF
C
oss
Output Capacitance ––– 490 –––
C
rss
Reverse Transfer Capacitance ––– 105 –––
C
oss
eff. (ER) Effective Output Capacitance (Ener
g
y Related) ––– 460 –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 530 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 104 A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 420 A
(Body Diode)
d
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 86 ––– ns T
J
= 25°C V
R
= 130V,
––– 110 ––– T
J
= 125°C I
F
= 62A
Q
rr
Reverse Recovery Charge ––– 300 ––– nC T
J
= 25°C di/dt = 100A/µs
f
––– 450 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 6.5 ––– A T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 62A
R
G
= 2.2Ω
V
GS
= 10V
f
V
DD
= 98V
I
D
= 62A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
S
= 62A, V
GS
= 0V
f
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 3.5mA
c
V
GS
= 10V, I
D
= 62A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
V
DS
= 75V
Conditions
V
GS
= 10V
f
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 120V
h
, See Fig. 11
V
GS
= 0V, V
DS
= 0V to 120V
g
Conditions
V
DS
= 50V, I
D
= 62A
I
D
= 62A
V
GS
= 20V
V
GS
= -20V
IRFB4115PbF
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
≤60µs PULSE WIDTH
Tj = 25°C
5.0V
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 50V
≤60µs PULSE WIDTH
0 20406080100
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 120V
VDS= 75V
VDS= 30V
ID= 62A
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 62A
VGS = 10V
IRFB4115PbF
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
ID, Drain Current (A)
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
140
150
160
170
180
190
200
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 3.5mA
-20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Energy (µJ)
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
Fig 12. Threshold Voltage vs. Temperature
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
IRFB4115PbF
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.245 0.0059149
0.155 0.0006322
τJ
τ
J
τ1
τ1τ2
τ2
R1
R1R2
R2
τ
C
τC
Ci = τi/Ri
Ci= τi/Ri
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj = 150°C and
Tstart = 25°C (Single Pulse)
IRFB4115PbF
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 15. - Typical Recovery Current vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
0
10
20
30
40
50
IRR (A)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
Fig 16. - Typical Recovery Current vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
0
10
20
30
40
50
IRR (A)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
Fig 18. - Typical Stored Charge vs. dif/dt
Fig 17. - Typical Stored Charge vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
0
500
1000
1500
2000
2500
QRR (nC)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
600
1200
1800
2400
3000
QRR (nC)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
IRFB4115PbF
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 21a. Switching Time Test Circuit Fig 21b. Switching Time Waveforms
Fig 20b. Unclamped Inductive Waveforms
Fig 20a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 22a. Gate Charge Test Circuit Fig 22b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 19. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
IRFB4115PbF
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRFB4115 IRFB4115
g
PYWW?
LC LC
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
OR
YWWP
LC LC
PART NUMBER
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
IRFB4115PbF
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
 Applicable version of JEDEC standard at the time of product release.
Moisture Sensitivity Level TO-220 N/A
RoHS compliant
Qualification information
†
Industrial
†
(per JEDEC JESD47F
††
guidelines)
Yes
Qualification level
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated typo on the Fig.16 and Fig.17, unit of Y-axis from "A" to "nC" on page 5.
11/6/2014 • Added Fig 14 - Typical Avalanche Current vs Pulsewidth on page 5.
4/28/2014