©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2690/2690A
NPN Epitaxia l Si licon Transistor
Absolute Maximu m Rating s TC=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pul sed
hFE Classificntion
Symbol Parameter Value Units
VCBO Collector-Base Voltage : KSC2690
: KSC2690A 120
160 V
V
VCEO Collector- Emitter Voltage
: KSC2690
: KSC2690A 120
160 V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 1.2 A
ICP *Collector Current (Pulse) 2.5 A
IB Base Current(DC) 0.3 A
PC Collector Dissipation (Ta=25°C) 1.2 W
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = 120V, IE = 0 1 µA
IEBO Em itter Cut-off Current VEB = 3V, IC= 0 1 µA
hFE1
hFE2
* DC Current Gain VCE = 5V, IC = 5mA
VCE = 5V, IC = 0.3A 35
60 105
140 320
VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.4 0.7 V
VBE(sat) * Base-Emitter Satur ation Voltage IC = 1A, IB = 0.2A 1 1.3 V
fT Current Gain Bandwidth Product VCE = 5V, IC = 0.2A 155 MHz
Cob Output Capacitance VCB =10V, IE =0, f = 1MHz 19 pF
Classification R O Y
hFE2 60 ~ 120 100 ~ 200 160 ~ 320
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSC2690/2690A
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
0 1020304050607080
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0mA
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
IB=10mA
Pulse Test
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1E-3 0.01 0.1 1 10
1
10
100
1000 VCE = 5V
Pulse Test
0.001
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.01
0.1
1
10
IC = 5 IB
Pulse Test
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat) [V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
1
10
100
1000
f = 1MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1
1
10
100
1000
VCE = 5V
Pulse Tes t
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
KSC2690A
VCEO MAX
KSC2690 VCEO MAX
Dissipation
Limited
PW = 100us
1ms
10ms
DC (PW = 50ms)
S/b Limited
IC(max) P ulse
IC(max) D C
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
©2000 Fairchild Semiconductor International
KSC2690/2690A
Rev. A, February 2000
Typical Characteristics (Continued)
Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating
0 255075100125150175
0
20
40
60
80
100
120
140
160
Dissipation Limited
S/b Limited
dT[%], IC DERATING
TC[oC], CASE TEMPERATURE
0 25 50 75 100 125 150 175
0
4
8
12
16
20
24
28
32
PC[W], POWE R DISSI PATIO N
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2690/2690A
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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not intended to be an exhaustive list of all such trademarks.
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FACT Quiet Series™
FAST®
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GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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UHC™
VCX™
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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