2SB1025 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier Complementary pair with 2SDI418 Outline UPAK 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2302SB1025 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage Veo -120 Vv Collector to emitter voltage Veco -80 Vv Emitter to base voltage Vieso 5 Vv - Collector current I; 1 A Collector peak current icipeak) -2 i Collector power dissipation Pp. 1 WwW Junction temperature _ Tj 150 C Storage temperature _ Tstg 55 to +1 50 C 7 Notes: 1. PW<10rms, Duty cycle < 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown Vemcses 120 Vv i, =~10 WA, 1. =0 valtage Collector to emitter breakdown Vigayceo 80 Vv Ig =-1 MA, Reg = voltage Emitter to base breakdown Visreno 2 _ Vv I, = -10 HA, 1, =0 voltage Collector cutoff current lego _ _ 10 pA Vee = =-100V,1,=0 DC current transfer ratio. _ Nees 7 60 ; 320 ee Vee 2-5 V, Io = 15 50 ymA- _ Nes 30 Vee = -5V, |, = -500 mA (Pulse test} Collector to emitter saturation Verisan _ 1 Vv i = -500 mA, voltage |, = -50 mA (Pulse test) Base to emitter voltage Vor 09 V Veg = -5 V, lo =-150 MA Gain bandwidth product sf, 140 MHz x= 75 V, le = -150 mA Collector output capacitance Cob 0 OF Vg 10 =O, f=1MHz Note: 1. The 2581025 is grouped by h,,, as follows. Mark DH DJ DK Aer 60 to 120 100 to200 160 to 320 HITACHI 23)2SB1025 232 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current Ip (mA) Maximum Collector Dissipation Curve io 2 foe) 2S cy 0 50 100 150 Amoient Temperature Ta (C) Typica: Output Characteristics Voe a5 Vv DC Current Transfer Ratio hr 0 O02 -O4 +06 -08 ~-1.0 Base to Emitter Voltage Vee (V) HITACHI | Collector Current Ie (A) o OQ Qo a So o ao Qo So 300 200 s Q Oo Typical Output Characteristics ig =O 2 4 -6 -B8 ~10 Collector to Emitter Voltage Voe (V) DC Current Transfer Ratio vs. Collector Current Vee = ~5 Vv -3 -10 -30 -100 -300 -1,000 Collector Current Io (mA)Gain Bandwidth Product f-; (MHz) Saturation Voltage vs. Collector Current oe 06F 1.2 > @ lo= 10 = z Pulse S 05+ 2 -10 Cc & c : -047 _. -0.8 [+ Vee (san ae cS wo r 3 nN = amos = -03' 0 #06 B> oot 7 94 2 27 & = r 2 8 o1f 8 -o2 2 , Voce tsat) 8 m ot 0 ~1 -3 +10 Gain Bandwidth Product vs. Collector Current F) Vog =-5V 300 200 Collector Output Capacitance Cy (p 100 10 3C -100 ~300 -1,000 Collector Current fo (mA) HITACHI vas ~30 N Qo Oo 100 50 20 2 -1 se -100 ~300 -1,000 Collector Current Ic (mA) Collector Output Capacitance vs. Collector to Base Voltage f= 1 MHz le =O -2 Collector to Base Voltage Veg (V) 5 -10 -20 -~50 100 233