vs P-Channel FETs SWITCHES BVGss 'ess . * IDtoff! Vp ' t Cie c t toff or swe wen \ aa) Ou | ine) Ves ves (Vl @Vps_ tp (ma) se Vps | (2) ep (pF) @Vpe Ves | (pF) Vos Ves ins) | ns) Process Min wa) | Max wv) Max = (V) {v) Min Max (Vv) (uA) | Min Max {Vv} Max (mA) | Max {Vv} iv) Max {v) (v} Max | Max 2u3382 | 10-72 | 30 1 15-30 2 -+5 6 1 56 | 3 30 10 | 300 88 2na3e4 | To-72 | 30 14 15-30 2 5 6 4 5 5 1 15 30 10 | 180 88 2n3386 | 70-72 | 30 1 1530 25 -5 10 4 95 -5 1 15-50 10 | 150 ag 2n3993 | 10-72 | 25 1 12" 15 12 -10 10 4 95 -10 1 1010 10 | 150 1% 86-100Co | 45 o 10 88 2N3993A | To-72 | 25 1 1.2* 15 12 -10 10 4 95 -t0 1 10 10 10 | 150 12-100 00 13 o 10 88 2ng994 | TO-72 | 25 1 127) 15 12-10 6 1 55 -10 1 2 2 10 | 300 16 ~10 0 | 45 o 8610 8g 2N3994A | TO-72 | 25 1 1.2% 15 12-10 6 1 55 -10 1 2 2 10 | 300 12, ~10 OF |3 o 610 88 2nso1s | To-1e | 30001 2 15 10-15 (12 1000-15 4 10 10 20 | 76 45 -15 o [10 o 12 35 | 65 88 2nsoi9 | To-18 | 30 1 2 15 10-15 7 5 -15 1 5 5 150 45 -15 o | 10 0 7 go | 125 | 88 2nsi14 | TO-18 | 30 1 05 20 05 -15 12 5 10 -15 001 | 30 90 18 | 75 i 2% -15 oOo 7 0. 612 16 | 21 88 2ns115 | TO-18 | 30 1 05 20 Oo5 -15 7 3. 6 -15 001 | 15 60 15 | 100 1 2-15 400 47 o 7 30 | 38 88 2ns116 | TO-18 | 30 1 05 20 05 -15 5 1 4 -15 001 | 5 25 15 | 150 1 2 ~-15 oO |7 0 65 42 | 60 88 P1086E | TO-106] 30 1 2 20 10-15 10 10-1501 10 10 15 | 75 1 45 -15 Oo | 10 18 0 35 | 50 88 Pios7E =| TO-106/ 30 1 2 20 10-15 5 -15 of |5S 15 | 150 45 -15 Oo | 10 15 0 40 | 75 88 PF510 TO-18 | 30 1 1015 05 10 -15 01 5 5 10 | 200 o5 | 15 ~10 Oo | 4 0 12 88 uc4si To-18 } 25 1 0.25 20 6 -20 .001 | 375 375 20 | 150 28 -200 29 |7 10 88 I a P-Channel FETs OIA = amecifiers bass * ass Vp 'pss Ges Goss Ciss Crss en Transistor | Case BVGpo 'pGo (Vv) @ Vos| Ip (mA) @ Vpg | (mMho) @ Vpg_ |(uMho) @ Vpg | (PF) Vpg Ves | (PF) Vps Ves ( | Process Type = Style | (VI @ Ig | (nA) @VDG | Min Max (V) | Wal | Min Max (Vv) | Min) Max (vy | Max = (v) | Max (v) tv) | Max (wv) (v) Vir/e Freq | No. Min (iA) | Max {V) Max (Hz) 2an2608 | To-18 | 30 1 10 30 | +t 4 5 [4 09 #45 5 1 4 5 7 5 1 125 1000 | 89 2n2z609 | TO-18 | 30 1 30 30 | 1 4 -5 | 1 2 10 5 25 25 5 30-8 1 125. 1000 | 88 2n3329 {| TO-72 | 20 10 | 10. 10 5 -15 } 10 | 14 3 10 1 2 10/1mA| 20 10 | 20 -10 13 125 1000 | 89 2n3330 | T0-72 | 20 10 | 10 10 6 -15 | 10 | 2 6 10 15 3 10/2mAl| 40 10 | 20 -10 1 125 1000 | 89 2n3331 | 10-72 | 20 10 | 10 10 8 -15 | 10 15 15 10 2 4 10/5mAl 100 10 | 20 -10 1 155 1000 | a9 2N3332 | TO-72 | 20 10 | 10 10 6 -15 | 10 | 4 6 10 1 2.2 10/tmA}{ 20 10 | 20-10 1 65 1000 | 89 2n3820 | TO-106| 20 10 | 20 10 8 -10} 10 |o3 15 10 og 5 10 200 +10 | 32 -10 Oo 16-10 0 89 2naga2 | To-106{ 25 10 | 10 15 55 -10, 1 14 12,0 2 6 10 5 10 | 20 ~10 6 5 -10 0 80 100 89 2n4343_ | TO-106| 25 10 | 10 15 10-10 | 14 10 3010 4 8 10 100 = 10 || 20, -10S 0 5 -10 0 80 100 88