PolarHTTM Power MOSFET IXTA 75N10P IXTP 75N10P IXTQ 75N10P = = VDSS ID25 RDS(on) 100 V 75 A 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M 100 100 V V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C IDM TC = 25 C, pulse width limited by TJM IAR 75 A 200 A TC = 25 C 50 A EAR TC = 25 C 30 mJ EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 10 10 V/ns PD TC = 25 C 360 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) G (TAB) TO-220 (IXTP) G TO-3P (IXTQ) G D (TAB) S G = Gate S = Source g g g D = Drain TAB = Drain Features l l l Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 100 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2006 IXYS All rights reserved (TAB) D S 1.13/10 Nm/lb.in. 5.5 4 3 Symbol Test Conditions (TJ = 25 C, unless otherwise specified) S V TJ = 125 C 21 5.5 V 100 nA 25 250 A A 25 m International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99158E(12/05) IXTA 75N10P IXTP 75N10P IXTQ 75N10P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 20 Ciss Coss 28 S 2250 pF 890 pF 275 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 27 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 53 ns td(off) RG = 10 (External) 66 ns tf 45 ns Qg(on) 74 nC 18 nC 40 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42C/W (TO-3P) (TO-220) Source-Drain Diode C/W C/W 0.21 0.25 Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 75 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr IF = 25 A -di/dt = 100 A/s VR = 50 V QRM TO-3P (IXTQ) Outline 120 ns 2.0 C TO-220 (IXTP) Outline TO-263 (IXTA) Outline Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte r is tics @ 25 C @ 25 C 80 120 V GS = 10V 70 110 9V 60 90 50 I D - Amperes I D - Amperes V GS = 10V 100 8V 40 30 7V 20 9V 80 70 60 8V 50 40 30 7V 20 10 10 6V 0 6V 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0 1 2 3 V D S - V olts Fig. 3. Output Characte ris tics @ 125C 6 7 8 9 10 11 12 2.2 V GS = 10V 70 R D S ( o n ) - Normalized 50 8V 40 30 7V 20 6V 10 0 0.5 1 1.5 2 2.5 V D S - V olts 1.8 1.6 I D = 75A 1.4 I D = 37.5A 1.2 1 0.8 5V 0 V GS = 10V 2 9V 60 I D - Amperes 5 V D S - V olts Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 80 0.6 3 3.5 4 4.5 -50 2.6 0 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 0.5 ID25 V alue vs . ID 2.8 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 80 V GS = 10V 70 2.4 60 2.2 I D - Amperes R D S ( o n ) - Normalized 4 TJ = 125C 2 1.8 1.6 1.4 50 40 30 20 1.2 10 TJ = 25C 1 0.8 0 0 20 40 60 I D - A mperes (c) 2006 IXYS All rights reserved 80 100 120 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 8. Transconductance Fig. 7. Input Adm ittance 40 120 36 105 32 g f s - Siemens I D - Amperes 90 75 60 45 30 28 TJ = -40C 24 25C 125C 20 16 12 TJ = 125C 8 25C -40C 4 15 0 0 5 6 7 8 9 10 0 11 20 40 60 V G S - Volts 100 120 200 10 180 9 VDS = 50V 160 8 I D = 37.5A 140 7 I G = 10mA 120 100 80 160 180 70 80 6 5 4 3 TJ = 125C 40 2 TJ = 25C 20 1 0 0 0.5 0.7 0.9 1.1 V S D - Volts 1.3 1.5 1.7 0 10 20 30 40 50 60 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 f = 1MHz TJ = 150C R DS(on) Limit TC = 25C C iss I D - Amperes Capacitance - picoFarads 140 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 80 I D - Amperes C oss 1000 100 25s 100s 1ms 10ms 10 DC C rss 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e 0.45 0.40 R ( t h ) J C - C / W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 Pu ls e W id th - m illis e c o n d s (c) 2006 IXYS All rights reserved 1000