BUZ 60 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 60 400 V 5.5 A 1 TO-220 AB C67078-S1312-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 36 C Values Unit A 5.5 Pulsed drain current IDpuls TC = 25 C 22 Avalanche current,limited by Tjmax IAR 5.5 Avalanche energy,periodic limited by Tjmax E AR 8 Avalanche energy, single pulse E AS mJ ID = 5.5 A, VDD = 50 V, RGS = 25 L = 18.5 mH, Tj = 25 C 320 Gate source voltage V GS Power dissipation P tot 20 W 75 TC = 25 C Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 60 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 400 - - V GS(th) V GS=V DS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS 2.1 3 4 A IDSS V DS = 400 V, V GS = 0 V, Tj = 25 C - 0.1 1 V DS = 400 V, V GS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current - V GS = 20 V, VDS = 0 V Drain-Source on-resistance 10 100 RDS(on) V GS = 10 V, ID = 3.5 A Semiconductor Group nA IGSS - 2 0.65 1 07/96 BUZ 60 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 3.5 A Input capacitance 2.5 pF - 780 1050 - 120 180 - 50 80 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 4.3 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Rise time - 20 30 - 50 75 - 130 150 - 70 90 tr V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Fall time tf V DD = 30 V, VGS = 10 V, ID = 2.7 A RGS = 50 Semiconductor Group 3 07/96 BUZ 60 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed - - 22 V 1 1.2 ns trr - 350 C Qrr V R = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 5.5 - V R = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - V SD V GS = 0 V, IF = 11 A Reverse recovery time ISM TC = 25 C Inverse diode forward voltage A IS - 4 3 - 07/96 BUZ 60 Drain current ID = (TC) Power dissipation Ptot = (TC) parameter: VGS 10 V 6.0 80 A W Ptot 5.0 ID 60 4.5 4.0 50 3.5 3.0 40 2.5 30 2.0 1.5 20 1.0 10 0.5 0.0 0 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 K/W A t = 21.0s p ID 10 1 ZthJC 10 0 =V DS /I D 100 s 1 ms DS (o n) 10 -1 R D = 0.50 10 0.20 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 10 0 10 1 10 2 V 10 10 3 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp 5 07/96 s 10 0 BUZ 60 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS Typ. output characteristics ID = (VDS) parameter: tp = 80 s 13 Ptot = 75W 3.2 l A a kj i h g 11 ID VGS [V] e 10 9 a 4.0 b 4.5 c 5.0 d 5.5 8 e 6.0 7 d f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 6 5 c 4 b c d f RDS (on) 2.4 2.0 1.6 1.2 e b k 2 0.4 VGS [V] = 1 a 4.0 4.5 a 0 0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 4 6 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 V 22 0 2 8 A VDS 12 ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max V DS2 x ID x RDS(on)max 10 8.0 A ID f g h i j 0.8 3 S 8 gfs 6.0 7 5.0 6 5 4.0 4 3.0 3 2.0 2 1.0 1 0 0 0.0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0 1 2 3 4 5 6 A ID 6 07/96 8 BUZ 60 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 3.5 A, VGS = 10 V 4.5 4.6 V 98% 4.0 VGS(th) RDS (on) 3.5 3.6 typ 3.2 3.0 2.8 2.5 2.4 2.0 2% 2.0 98% 1.5 1.6 1.2 typ 1.0 0.8 0.5 0.4 0.0 -60 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Coss Tj = 25 C typ Tj = 150 C typ Crss Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V VSD VDS Semiconductor Group 10 -1 0.0 7 07/96 3.0 BUZ 60 Avalanche energy EAS = (Tj) parameter: ID = 5.5 A, VDD = 50 V RGS = 25 , L = 18.5 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 8 A 340 16 mJ V EAS 280 VGS 12 240 10 200 0,2 VDS max 8 160 6 120 80 4 40 2 0 20 0,8 VDS max 0 40 60 80 100 120 C 160 Tj 0 10 20 30 40 50 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 65 BUZ 60 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96