MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. Figure 1. Internal schematic diagram # % " 3# Table 1. Device summary Order code Marking Polarity Package Packaging MJE340 MJE340 NPN SOT-32 Tube MJE350 MJE350 PNP SOT-32 Tube November 2011 Doc ID 4171 Rev 6 1/8 www.st.com 8 Electrical ratings 1 MJE340, MJE350 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter MJE340 (NPN) Unit MJE350 (PNP) VCBO Collector-base voltage (IE = 0) 300 V VCEO Collector-emitter voltage (IB = 0) 300 V VEBO Base-emitter voltage (IC = 0) 3 V Collector current 0.5 A PTOT Total dissipation at Tc 25 C 20.8 W Tstg Storage temperature IC TJ Note: C Max operating junction temperature 150 for PNP type voltage and current values are negative. Table 3. Symbol RthJC 2/8 -65 to 150 Thermal data Parameter Thermal resistance junction-case_max Doc ID 4171 Rev 6 Value Unit 6.0 C/W MJE340, MJE350 2 Electrical characteristics Electrical characteristics Tcase = 25 C unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB= 300 V 100 A IEBO Emitter cut-off current (IC = 0) VEB = 3 V 100 A VCEO(sus)(1) VBE(on) VCE(sat) (1) hFE Collector-emitter I = 1 mA sustaining voltage (IB = 0) C 300 V Emitter-base on voltage (IC = 0) IC = 50 mA VCE=10 V 1 V Collector-emitter saturation voltage IC = 100 mA _ IB = 10 mA 0.5 V DC current gain IC = 50 mA VCE = 10 V 30 240 1. Pulse test: pulse duration = 300 s, duty cycle 2 %. Note: for PNP type voltage and current values are negative. Doc ID 4171 Rev 6 3/8 Electrical characteristics 2.1 4/8 MJE340, MJE350 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (NPN type) Figure 5. DC current gain (PNP type) Figure 6. Collector-emitter saturation voltage (NPN type) Figure 7. Base-emitter saturation voltage (PNP type) Doc ID 4171 Rev 6 MJE340, MJE350 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Doc ID 4171 Rev 6 5/8 Package mechanical data Table 5. MJE340, MJE350 SOT-32 (TO-126) mechanical data mm. Dim. Min. Typ. Max. A 2.40 2.90 B 0.64 0.88 B1 0.39 0.63 D 10.50 11.05 E 7.40 7.80 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.30 16 OP 2.90 3.20 Q Q1 3.80 1 1.52 H2 2.15 I 1.27 Figure 8. SOT-32 (TO-126) drawing ?2%6?% 6/8 Doc ID 4171 Rev 6 MJE340, MJE350 4 Revision history Revision history Table 6. Document revision history Date Revision Changes 05-Apr-2011 5 Minor text changes 10-Nov-2011 6 Added: VCBO in Table 2, VCE(sat) and VBE(on) in Table 4 Doc ID 4171 Rev 6 7/8 MJE340, MJE350 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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