DHG10I1200PA
preliminary
13
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
Sonic Fast Recovery Diode
Part number
DHG10I1200PA
Backside: cathode
FAV
rr
t ns200
RRM
10
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20200213bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DHG10I1200PA
preliminary
ns
9 A
T
VJ
= °C
reverse recovery time
A10.5
200
350
ns
I
RM
max. reverse recovery current
I
F
= A;10
25
T = 125 °C
VJ
-di
F
= A/µs250/dt
t
rr
V
R
= V600
T
VJ
= °C25
T = 125 °C
VJ
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
2.22
R1.5 K/W
R
min.
10
V
RSM
V
15T = 25°C
VJ
T = °C
VJ
mA0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
105
P
tot
85 WT = 25°C
C
RK/W
10
1200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
2.93
T = 25°C
VJ
125
V
F0
V
1.25T = °C
VJ
150
r
F
90
mΩ
V
2.23T = °C
VJ
I = A
F
V
10
3.14
I = A
F
20
I = A
F
20
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V
1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
4
junction capacitance
V = V600 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
60 A
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
1200
0.5
IXYS reserves the right to change limits, conditions and dimensions. 20200213bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DHG10I1200PA
preliminary
Ratings
XXXXXX
yywwZ
Logo
Part Number
Date Code
Lot #
123456
Product Marking
Location
D
H
G
10
I
1200
PA
Part description
Diode
Sonic Fast Recovery Diode
extreme fast
Single Diode
TO-220AC (2)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque
0.4
T
VJ
°C150
virtual junction temperature
-55
Weight g2
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
125-55
TO-220
Similar Part Package Voltage class
DHG10I1200PM TO-220ACFP (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
DHG10I1200PA 505273Tube 50DHG10I1200PAStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V1.25
mΩ
V
0 max
R
0 max
slope resistance *
87
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
°C
* on die level
150
IXYS reserves the right to change limits, conditions and dimensions. 20200213bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DHG10I1200PA
preliminary
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
2x b2
E
ØP
Q
D
L1
L
2x b
e
C
A2
H1
A1
A
1 3
4
= supplier option
13
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20200213bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DHG10I1200PA
preliminary
200 250 300 350 400 450 500
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
2
0
Q
rr
[μC]
I
F
[
A]
V
F
id]V[
F
/dt [A/μs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
200 250 300 350 400 450 500
4
8
12
16
20
24
I
RM
[A]
di
F
/dt [A/μs]
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
200 250 300 350 400 450 500
100
200
300
400
500
t
rr
[ns]
di
F
/dt [A/μs]
5 A
10 A
20 A
T
VJ
= 125°C
V
R
= 600 V
200 250 300 350 400 450 500
0.1
0.2
0.3
0.4
0.5
0.6
E
rec
[mJ]
di
F
/dt [A/μs]
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
0.001 0.01 0.1 1 10
0.1
1
10
R
i
i
0.385 0.0005
0.355 0.004
0.315 0.02
0.445 0.15
Z
thJC
[K/W]
t
P
[s]
Fig. 1 Typ. Forward current
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus di/dt
Fig. 3 Typ. peak reverse current
I
RM
versus di/dt
Fig. 5 Typ. recovery time
t
rr
versus di/dt
Fig. 7 Typ. transient thermal impedance junction to case
Fig. 4 Dynamic parameters
Q
rr
, I
RM
versus T
VJ
Fig. 6 Typ. recovery energy
E
rec
versus di/dt
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20200213bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
