Flash Erasable,
Reprogrammable CMOS PAL® Device
PALCE16V8
Cypress Semiconductor Corporation 3901 North First Street San Jose CA 95134 408-943-2600
Document #: 38-03025 Rev. ** Revised September 3, 1998
16V8
Features
Active pull-up on data input pins
Low power version (16V8L)
55 mA max. commercial (10, 15, 25 ns)
65 mA max. industrial (10, 15, 25 ns)
65 mA military (15 and 25 ns)
Standard version has low power
90 mA max. commercial (10, 15, 25 ns)
115 mA max. commercial (7 ns)
130 mA max. military/industrial (10, 15, 25 ns)
CMOS Flash technology for electrical erasability and
reprogrammability
PCI compliant
User-programmable macrocell
Output polarity control
Individually selectable for registered or combinato-
rial operation
Up to 16 input terms and 8 outputs
7.5 ns coml version
5 ns tCO
5 ns tS
7.5 ns tPD
125-MHz state machine
10 ns military/industrial versions
7 ns tCO
10 ns tS
10 ns tPD
62-MHz state machine
High reliability
Proven Flash technology
100% programming and functional testing
Functional Description
The Cypress PALCE16V8 is a CMOS Flash Electrical Eras-
able s econd-gen eration programm able arra y logic device . It is
implem ented wi th the fam iliar sum -of-prod uct ( AND-OR) lo gic
structure and the programmable macrocell.
16V81
8888888 8
10987654321
11 12 13 14 15 16 17 18 19 20
PROGRAMMABLE
AND ARRAY
(64 x 32)
Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell
GND I8I7I6I5I4I3I2I1CLK/I0
OE/I9I/O0I/O1I/O2I/O3I/O4I/O5I/O6I/O7VCC
Logic Block Diagram (PDIP/CDIP)
Pin Configurations PLCC/LCC
Top View
16V8216V83
18
17
16
15
14
4
5
6
7
89 10111213
321 19
I
I
CLK/I
I/O
20
V
CC
OE/I
I/O
I/O
CLK/I0
I1
I2
I3
I4
I8
GND OE/I9
VCC
I/O7
I/O6
I/O4
I/O3
I/O2
I/O0
I/O5
I5
I6
I7I/O1
1
2
3
4
5
6
7
8
9
10 11
12
16
15
14
13
17
20
19
18
DIP
I3
I4
I5
I6
I7
2
1
0
7
I/O6
I/O4
I/O3
I/O2
I/O5
8
I
GND
9
0
1
Top View
PALCE16V8
Document #: 38-03025 Rev. ** Page 2 of 13
Functional Description (continued)
The PALCE16V8 is executed in a 20-pin 300-mil molded DIP,
a 300-mil cerdip, a 20-lead square ceramic leadless chip car-
rier, and a 20-lead square plastic leaded chip carrier.
The device provides up to 16 inputs and 8 outputs. The
PALCE16V8 can be electrically erased and reprogrammed.
The programmable macrocell enables the device to function
as a s uperset to t he famil iar 20-pin PLDs suc h as 16L8, 16R8,
16R6, and 16R4.
The PALCE16V8 features 8 product terms per output and 32
input ter ms into the AND array . The fi rst product term in a mac-
rocel l can be us ed ei the r as an in tern al ou tpu t ena ble c ont rol
or as a data product term.
There are a total of 18 architecture bits in the PALCE16V8
macrocell; two are global bits that apply to all macrocells and
16 that apply locally, two bits per macrocell. The architecture
bits determine whether th e macrocell functions as a register or
combin atorial wi th invert ing or noninver ting outp ut. The o utput
enable control can come from an external pin or internally from
a product term . The ou tpu t can al so be perma ne ntly ena ble d,
functioning as a dedicated output or permanently disabled,
functioning as a dedicated input. Feedback paths are select-
able from either the input/output pin associated with the mac-
rocell, the input/out pu t pin as so ci ated with an adjacent pin, or
from the m acrocell regis ter itself.
Power-Up Reset
All r egister s in the PALCE1 6V8 power -up to a l ogic LOW for
predictable system initialization. For each register , the associ-
ated output pin will be HIGH due to active-LOW outputs.
Electronic Signature
An electronic signature word is provided in the PALCE16V8
that consists of 64 bits of programmable m emory that can con-
tain user-de f in ed data .
Security Bit
A security bit is provided that defeats the readback of the in-
ternal programmed pattern when the bit is programmed.
Low Power
The Cypress PALCE16V8 provides low-power operation
through the use of CMOS technology , and increased testability
with Flash reprogrammability.
Product Term Disable
Product Term Dis able (PT D) fuses are included for e ach prod-
uct term . The PTD fuses allo w each pro duct term to b e individ-
ually disabled.
Selection Guide
Generic Part Number tPD ns tS ns tCO ns ICC mA
Coml/Ind Mil Coml/Ind Mil Coml/Ind Mil ComlMil/Ind
PALCE16V8-5 5 3 4 115
PALCE16V8-7 7.5 7 5 115
PALCE16V8-10 10 10 10 10 710 90 130
PALCE16V8-15 15 15 12 12 10 10 90 130
PALCE16V8-25 25 25 15 20 12 12 90 130
PALCE16V8L-15 15 15 12 12 10 12 55 65
PALCE16V8L-25 25 25 15 20 12 20 55 65
Shaded area contains preliminary information.
Configurati on Table
CG0CG1CL0xCell Configuration Devices Emulated
010Regi stered Output Registe red Med PALs
011Combinatorial I/O Registe red Med PALs
100Combinatorial Output Small PALs
101Input Small PAL s
111Combinatorial I/O 16L8 only
PALCE16V8
Document #: 38-03025 Rev. ** Page 3 of 13
Macrocell
Q
QD
CLK
16V84
1
1
0
0
1
X
CL1x
0
1
X
0
11
I/Ox
From
Adjacent
Pin
CL0x
CG1for pin 13 to 18
CG0for pin 12 and 19
1
0
0
1
11
00
0
1X
0
11OE
VCC
To
Adjacent
Macrocell
CL0x
CG1
VCC
PALCE16V8
Document #: 38-03025 Rev. ** Page 4 of 13
Maximum Ratings
(Above w hi ch the useful life may be impaired. For user g uid e-
lines, not tes ted .)
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)...........................................0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State...............................................0.5V to +7.0V
DC Input Voltage............................................0.5V to +7.0V
Output Current into Outputs (LOW).............................24 mA
DC Programming Voltage.............................................12.5V
Latch-Up Current.....................................................>200 mA
Operating Range
Range Ambient
Temperature VCC
Commercial 0°C to +75°C 5V ±5%
Military[1] 55°C to +125°C 5V ±10%
Industrial 40°C to +85°C5V ±10%
Electrical Characteristics Over the Operating Range[2]
Parameter Description Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min.,
VIN = VIH or VIL IOH = 3.2 mA Coml2.4 V
IOH = 2 mA Mil/Ind
VOL Output LOW Voltage VCC = Min.,
VIN = VIH or VIL IOL = 24 mA Coml0.5 V
IOL = 12 mA Mil/Ind
VIH Input HIGH Level Guaranteed Input Logical HIGH V oltage for All Inputs[3] 2.0 V
VIL[4] Input LOW Level Guarante ed Inpu t Logic al LOW Voltage f or All In puts[3] 0.5 0.8 V
IIH Input or I/O HIGH Leakage
Current 3.5V < VIN < VCC 10 µA
IIL[5] Input or I/O LOW Leakage
Current 0V < VIN < VIN (Max.) 100 µA
ISC Output Sho rt Circuit Cur rent VCC = Max., VOUT = 0.5V[6, 7] 30 150 mA
ICC Operating Power Supply
Current VCC = Max.,
VIL = 0V, V IH = 3V,
Output Open,
f = 15 MHz
(counter)
5, 7 ns Coml115 mA
10, 15, 25 ns 90 mA
15L, 25L ns 55 mA
10, 15, 25 ns Mil/Ind 130 mA
15L, 25L ns Mil. 65 mA
15L, 25L ns Ind. 65 mA
Capacitance[7]
Parameter Description Test Conditions Typ. Unit
CIN Input Capacitance VIN = 2.0V @ f = 1 MHz 5pF
COUT Output Capacitance VOUT = 2.0V @ f = 1 MHz 5pF
Endurance Characteri stics[7]
Parameter Description Test Conditions Min. Max. Unit
NMinimu m Re pro gram m ing Cycle s Nor m al Programming Conditions 100 Cycles
Notes:
1. TA is the instant on case temperature.
2. See the last page of this specifi cat io n for Gro up A subgro up test in g infor ma ti on .
3. These are absolute values with respect to device ground. All overshoots due to system or tester noise are included.
4. VIL (Min.) i s equal to 3.0V for p ulse durations less than 20 ns.
5. The leakage current is due to the internal pull-up resistor on all pins.
6. Not more t han one output should be test ed at a time. Duration of the short cir cuit should no t be more than one se cond. V OUT = 0.5V has been ch osen to a void test prob lems
caused by te ster ground degrad ation.
7. Tested initially and after any design or process changes that may affect these parameters.
PALCE16V8
Document #: 38-03025 Rev. ** Page 5 of 13
AC Test Loads and Wavefor ms
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
<2ns <2ns
16V85
OUTPUT
R2
R1
CL
S1
5V
TEST POINT
16V86
Commercial Military
Specification S1CLR1R2R1R2Measured Output Value
tPD, tCO Closed 50 pF 2003903907501.5V
tPZX, tEA Z · H: Open
Z · L: Closed 1.5V
tPXZ, tER H · Z: Open
L · Z: Closed 5 pF H · Z: VOH 0.5V
L · Z: VOL + 0.5V
PALCE16V8
Document #: 38-03025 Rev. ** Page 6 of 13
Commercial and Industri al Switching Characterist ic s[2]
16V8-5 16V8-7 16V8-10 16V8-15 16V8-25
Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tPD Input to Output
Propagation
Delay[8, 9]
1 5 3 7.5 310 315 325 ns
tPZX OE to Output
Enable 1 6 6 10 15 20 ns
tPXZ OE to Output
Disable 1 5 6 10 15 20 ns
tEA Input to Output
Enable Delay[7]1 6 9 10 15 25 ns
tER Input to Output
Disable Del ay[7, 10] 1 5 9 10 15 25 ns
tCO Clock to Output
Delay[8,9] 1 4 2 5 2 7 2 10 212 ns
tSInput or Feedbac k
Set-Up Time 3 5 7.5 12 15 ns
tHInput Hold Time 0 0 0 0 0 ns
tPExternal Clock
Period (tCO + tS)710 14.5 22 27 ns
tWH Clock Width HIGH[7] 3 4 6 8 12 ns
tWL Clock Width LOW[7] 3 4 6 8 12 ns
fMAX1 Ext ernal Maximu m
Frequency
(1/(tCO + tS))[7, 11]
143 100 69 45.5 37 MHz
fMAX2 Data Path Maximum Fre-
quency (1/(tWH + tWL))[7, 12] 166 125 83 62.5 41.6 MHz
fMAX3 Internal Feedback
Maximum Frequen cy
(1/(tCF + tS))[7, 13]
166 125 74 50 40 MHz
tCF Register Clock to
Feedback Input[7, 14] 3 3 6 8 10 ns
tPR Power-Up Reset Time[7] 1 1 1 1 1 µs
Shaded area contains preliminary information.
Notes:
8. Min. times are tested initially and after any design or process changes that may affect these parameters.
9. This specification is guaranteed for all device outputs changing state in a given access cycle.
10. This parameter is measured as the time after O E pi n or int ernal disable inpu t disabl es or en ables the o utput pi n. Thi s delay is meas ured t o the poi nt at which a prev ious
HIGH level has fallen to 0.5 vol ts below VOH min. or a prev ious LO W level has rise n to 0 .5 volt s abov e VOL max.
11. This specification indicates the guaranteed maximum frequency at which a state machine configuration with external feedback c an o pe rate.
12. This specification indicates the guaranteed maximum frequency at which the device can operate in data path mode.
13. This specification indicates the guaranteed maximum frequency at which a state machine configuration with internal only feedback can operate.
14. This parameter is calculated from the clock period at fMAX inte rnal ( 1/f MAX3) as me asured (see N ote 7 ab ove) mi nus t S.
PALCE16V8
Document #: 38-03025 Rev. ** Page 7 of 13
Military Switching Characteristics[7]
16V8-10 16V8-15 16V8-25
Parameter Description Min. Max. Min. Max. Min. Max. Unit
tPD Input to Output
Propagation Delay[8 , 9] 310 315 325 ns
tPZX OE to Output Enable 10 15 20 ns
tPXZ OE to Output Disable 10 15 20 ns
tEA Input to Output Enable Delay[7] 10 15 25 ns
tER Input to Output Disable Delay[7, 10] 10 15 25 ns
tCO Clock to Output Delay[8, 9] 2 7 2 10 212 ns
tSInput or Feedbac k Set-U p Time 10 12 15 ns
tHInput Hold Time .5 .5 .5 ns
tPExternal Clock Period (tCO + tS)17 22 27 ns
tWH Clock Width HIGH[7] 6 8 12 ns
tWL Clock Width LOW[7] 6 8 12 ns
fMAX1 External Maximum Frequ enc y
(1/(tCO + tS)[7, 11] 58 45.5 37 MHz
fMAX2 Data Path Maximum Frequency
(1/(tWH + tWL))[7, 12 ] 83 62.5 41.6 MHz
fMAX3 Internal Feedback Maximum
Frequency (1/(tCF + tS))[7, 13] 62.5 50 40 MHz
tCF Register Clock to
Feedback Input[7, 14] 6 8 10 ns
tPR Power-Up Reset Time[7] 111µs
Switching Waveform
tStHtWL
tWH
tP
tCO
tPD
16V87
tPXZ,t
ER
INPUTS, I/O,
REGISTERED
FEEDBACK
CP
REGISTERED
OUTPUTS
COMBINATORIAL
OUTPUTS
tPXZ,t
ER
tEA,t
PZX
tEA,t
PZX
[10]
[10] [10]
[10]
Power-Up Reset Waveform
tPR
POWER
CLOCK
tS
tWL
10%
REGISTERED
ACTIVE LOW
OUTPUTS
16V88
SUPPLY VO LT AG E
tPR MAX= 1 µs
90% VCC
PALCE16V8
Document #: 38-03025 Rev. ** Page 8 of 13
Functional Logic Diagram for PALCE16V8
0
116 20 24 28
00
12843119 23 27151173
2
19
0 1620242812843119 23 27151173 11
16V89
MC7
CL1=2048
CL0=2120
PTD=2128
-2135
3
18
MC6
CL1=2049
CL0=2121
PTD=2136
-2143
4
17
MC5
CL1=2050
CL0=2122
PTD=2144
-2151
5
16
MC4
CL1=2051
CL0=2123
PTD=2152
-2159
6
15
MC3
CL1=2052
CL0=2124
PTD=2160
-2167
7
14
MC2
CL1=2053
CL0=2125
PTD=2168
-2175
8
13
MC1
CL1=2054
CL0=2126
PTD=2176
-2183
9
12
MC0
CL1=2055
CL0=2127
PTD=2184
-2191
10
USER ELECTRONIC SIGNATURE ROW
BYTE0 BYTE1BYTE2BYTE3BYTE4BYTE5 BYTE6 BYTE7
2056 2064 2072 2080 2088 2096 2104 2112 2119
MSB MSB LSBLSB
CG0=2192
CG1=2193
20
VCC
PRODUCTLINE FIRSTCELL NUMBERS
PIN NUMBERS INPUT LINE
NUMBERS
PIN NUMBERS
32
96
160
224
64
128
192
256 288
352
416
480
320
384
448
512 544
608
672
736
576
640
704
768 800
864
928
992
832
896
960
10241056
1120
1184
1248
1088
1152
1216
12801312
1376
1440
1504
1344
1408
1472
15361568
1632
1696
1760
1600
1664
1728
17921824
1888
1952
2016
1856
1920
1984
GLOBALARCHBITS
PALCE16V8
Document #: 38-03025 Rev. ** Page 9 of 13
Ordering Information
ICC
(mA) tPD
(ns) tS
(ns) tCO
(ns) Ordering Code
Pack-
age
Name Package Type Operating
Range
115 534PALCE16V8-5JC J61 20-Lead Plastic Leaded Chip Carrier Commercial
115 7.5 5 5 PALCE16V8-7JC J61 20-Lead Plastic Leaded Chip Carrier Commercial
PALCE16V8-7PC P5 20-Lead (300-Mil) Molded DIP
90 10 7.5 7PALCE16V8-10JC J61 20-Lead Plastic Leaded Chip Carrier
PALCE16V8-10PC P5 20-Lead (300-Mil) Molded DIP
130 10 7.5 7PALCE16V8-10JI J61 20-Lead Plastic Leaded Chip Carrier Industrial
PALCE16V8-10PI P5 20-Lead (300-Mil) Molded DIP
130 10 10 7PALCE16V8-10DMB D6 20-Lead (300-Mil) CerDIP Military
PALCE16V8-10LMB L61 20-Pin Square Leadless Chip Carrier
90 15 12 10 PALCE16V8-15JC J61 20-Lead Plastic Leaded Chip Carrier Commercial
PALCE16V8-15PC P5 20-Lead (300-Mil) Molded DIP
130 15 12 10 PALCE16V8-15PI P5 20-Lead(300Mil) Molded DIP Industrial
PALCE16V8-15DMB D6 20-Lead (300-Mil) CerDIP Military
PALCE16V8-15LMB L61 20-Pin Square Leadless Chip Carrier
90 25 15 12 PALCE16V8-25JC J61 20-Lead Plastic Leaded Chip Carrier Commercial
PALCE16V8-25PC P5 20-Lead (300-Mil) Molded DIP
130 25 15 12 PALCE16V8-25JI J61 20-Lead Plastic Leaded Chip Carrier Industrial
PALCE16V8-25DMB D6 20-Lead (300-Mil) CerDIP Military
PALCE16V8-25LMB L61 20-Pin Square Leadless Chip Carrier
55 10 7.5 7PALCE16V8L-10JC J61 20-Lead Plastic Leaded Chip Carrier Commercial
PALCE16V8L-10PC P5 20-Lead (300-Mil) Molded DIP
65 10 10 7PALCE16V8L-10JI J61 20-Lead Plastic Leaded Chip Carrier Industrial
PALCE16V8L-10PI P5 20-Lead (300-Mil) Molded DIP
55 15 12 10 PALCE16V8L-15JC J61 20-Lead Plastic Leaded Chip Carrier Commercial
PALCE16V8L-15PC P5 20-Lead (300-Mil) Molded DIP
65 15 12 10 PALCE16V8L-15DMB D6 20-Lead (300-Mil) CerDIP Military
PALCE16V8L-15LMB L61 20-Pin Square Leadless Chip Carrier
55 25 15 12 PALCE16V8L-25JC J61 20-Lead Plastic Leaded Chip Carrier Commercial
PALCE16V8L-25PC P5 20-Lead (300-Mil) Molded DIP Military65 25 15 12 PALCE16V8L-25DMB D6 20-Lead (300-Mil) CerDIP
PALCE16V8L-25LMB L61 20-Pin Square Leadless Chip Carrier
Shaded area contains preliminary information.
PALCE16V8
Document #: 38-03025 Rev. ** Page 10 of 13
MILITAR Y SPECIFICATIONS
Group A Subgroup Testing
DC Characteristics
Parameter Subgroups
VOH 1, 2, 3
VOL 1, 2, 3
VIH 1, 2, 3
VIL 1, 2, 3
IIX 1, 2, 3
IOZ 1, 2, 3
ICC 1, 2, 3
Switching Characteristics
Parameter Subgroups
tPD 9, 10, 11
tCO 9, 10, 11
tS9, 10, 11
tH9, 10, 11
Package Diagrams
20-Lead (300-Mil) CerDIP D6
MIL-STD-1835 D-8 Config. A
51-80029
PALCE16V8
Document #: 38-03025 Rev. ** Page 11 of 13
Package Diagrams (continued)
20-Lead Plastic Leaded Chip Carrier J61
51-85000-A
20-Square Leadless Chip Carrier L61
51-80049
PALCE16V8
Document #: 38-03025 Rev. ** Page 12 of 13
© Cypress Semiconductor Corporation, 1998. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry emb odied in a Cypress Semiconductor product. Nor does it convey or imply any license under paten t or other rights. Cypress Se miconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconducto r products in life-support systems application implies that the manu factur er assume s all risk of such use and in doi
ng so indemnifies Cypress Semiconductor against all charges.
Package Diagrams (continued)
51-85011-A
20-Lead (300-Mil) Molded DIP P5
PALCE16V8
Document #: 38-03025 Rev. ** Page 13 of 13
Document Title: PALCE16V8 Flash Erasable, Reprogrammable CMOS PAL® De v i ce
Document Number: 38-03025
REV. ECN NO. Issue
Date Orig. of
Change Description of Change
** 106370 07/11/01 SZV Change from Spec Number: 38-00364 to 38-03025