1
HGTG10N120BND
35A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49302.
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging JEDEC STYLE TO-247
Symbol
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG10N120BND TO-247 10N120BND
NOTE: When ordering, use the entire part number.
G
C
E
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2000 File Number 4579.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BND UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 35 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 17 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD298 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8µs
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG= 10Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 125oC - 170 - µA
TC = 150oC - - 2.5 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 10A,
VGE = 15V TC = 25oC - 2.45 2.7 V
TC = 150oC - 3.7 4.2 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 90µA, VCE = VGE 6.0 6.8 - V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,
L = 400µH, VCE(PK) = 1200V 55 - - A
Gate to Emitter Plateau Voltage VGEP IC = 10A, VCE = 0.5 BVCES - 10.4 - V
On-State Gate Charge QG(ON) IC = 10A,
VCE = 0.5 BVCES VGE = 15V - 100 120 nC
VGE = 20V - 130 150 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = 10A
VCE = 0.8 BVCES
VGE = 15V
RG= 10Ω
L = 2mH
Test Circuit (Figure 20)
-2326ns
Current Rise Time trI -1115ns
Current Turn-Off Delay Time td(OFF)I - 165 210 ns
Current Fall Time tfI - 100 140 ns
Turn-On Energy EON - 0.85 1.05 mJ
Turn-Off Energy (Note 3) EOFF - 0.8 1.0 mJ
HGTG10N120BND
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Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = 10A
VCE = 0.8 BVCES
VGE = 15V
RG= 10Ω
L = 2mH
Test Circuit (Figure 20)
-2125ns
Current Rise Time trI -1115ns
Current Turn-Off Delay Time td(OFF)I - 190 250 ns
Current Fall Time tfI - 140 200 ns
Turn-On Energy EON - 1.75 2.3 mJ
Turn-Off Energy (Note 3) EOFF - 1.1 1.4 mJ
Diode Forward Voltage VEC IEC = 10A - 2.55 3.2 V
Diode Reverse Recovery Time trr IEC = 10A, dIEC/dt = 200A/µs - 57 70 ns
IEC = 1A, dIEC/dt = 200A/µs - 32 40 ns
Thermal Resistance Junction To Case RθJC IGBT - - 0.42 oC/W
Diode - - 1.25 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
0
10
25 75 100 125 150
25
30
15
5
VGE = 15V
20
35
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20
600 800400200 1000 1200
0
50
60
30
TJ= 150oC, RG = 10Ω, VG= 15V, L = 400µH
HGTG10N120BND
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FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ= 150oC, RG = 10Ω, L = 2mH, VCE = 960V
fMAX, OPERATING FREQUENCY (kHz)
2
1
10
2010
50
5
100
TC = 75oC, VGE = 15V, IDEAL DIODE
TCVGE
110oC12V
15V
15V
75oC
110oC
75oC12V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.42oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD- PC) / (EON + EOFF)
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
12 13 14 15 16
5
10
15
20
50
100
150
250
tSC ISC
25
200
VCE = 840V, RG = 10Ω, TJ= 125oC
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
10
30
6810
40
50
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 12V
TC = -55oCTC = 25oC
TC = 150oC
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
02 4 6 810
10
50
0
TC = -55oCTC = 25oC
TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
EON, TURN-ON ENERGY LOSS (mJ)
4
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
2
50
5
10
015 20
TJ = 25oC, VGE = 12V, VGE = 15V
RG = 10Ω, L = 2mH, VCE = 960V
1
TJ = 150oC, VGE = 12V, VGE = 15V 1.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
050
1.0
0.5
2.0
10
RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
15 20
HGTG10N120BND
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FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
0
15
20
25
30
35
5
40
15 20
TJ = 25oC, TJ = 150oC, VGE = 15V
10
RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
0
10
30
20
15010520
40
50 RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC OR TJ = 150oC, VGE = 15V
0
250
5
100
200
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
15
400
300
350
20
RG = 10Ω, L = 2mH, VCE = 960V
10
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 150oC
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
0
50
150
200
5
100
250
300
2015
RG = 10Ω, L = 2mH, VCE = 960V
10
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
40
138 9 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
11
60
80
14 15
100
TC = 150oCTC = -55oC
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 20V
20
TC = 25oC
7
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
5
20
006020 80
VCE = 800V
IG (REF) = 1mA, RL = 60Ω, TC = 25oC
VCE = 1200V
10
15
120
VCE = 400V
100
40
HGTG10N120BND
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FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
0 5 10 15 20 25
0
CIES
COES
1
3
4FREQUENCY = 1MHz
2
CRES
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
6
12
01
02
3
15 DUTY CYCLE <0.5%, TC = 110oC
PULSE DURATION = 250µs
9
34
VGE = 10V
VGE = 15V
t1
t2
PD
SINGLE PULSE
t1, RECTANGULAR PULSE DURATION (s)
10-2
10-1
100
10-5 10-3 10-2 10-1 100
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PDX ZθJC X RθJC) + TC
ZθJC, NORMALIZED THERMAL RESPONSE
0.5
0.2
0.1
0.05
0.02
0.01
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
13456
150oC
25oC
-55oC
100
10
12IF, FORWARD CURRENT (A)
10
20
70
201
30
60
t, RECOVERY TIMES (ns)
10
40
5
trr
ta
50
tb
2
TC = 25oC, dIEC / dt = 200A/µs
HGTG10N120BND
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptib le to
gate-insulation damage by the electrostatic discharge of
energy through the de vices . When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the de vice . With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by n umerous equipment man ufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge . IGBTs can
be handled saf ely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined b y fMAX2 = (PD - PC)/(EOFF + EON). The
allow ab le dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
RG = 10Ω
L = 2mH
VDD = 960V
+
-
HGTG10N120BND
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG10N120BND
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
