N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D GD S G TO-220 Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) S FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A VGSS Gate-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ IAR Avalanche Current (Note 1) 52.4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 12.1 7.0 121 0.81 -55 to +175 mJ V/ns W W/C C 300 C FQP50N06L 1.24 Unit C/W 62.5 C/W dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2001 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FQP50N06L/D FQP50N06L -- N-Channel QFET(R) MOSFET FQP50N06L Part Number FQP50N06L Top Mark FQP50N06L Package TO-220 Electrical Characteristics Symbol Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 -- -- V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.06 -- V/C VDS = 60 V, VGS = 0 V -- -- 1 A VDS = 48 V, TC = 150C -- -- 10 A IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 26.2 A VGS = 5 V, ID =26.2 A --- 0.017 0.020 0.021 0.025 gFS Forward Transconductance VDS = 25 V, ID = 26.2 A -- 40 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1250 1630 pF -- 445 580 pF -- 90 120 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 26.2 A, RG = 25 (Note 4) VDS = 48 V, ID = 52.4 A, VGS = 5 V (Note 4) -- 20 50 ns -- 380 770 ns -- 80 170 ns -- 145 300 ns -- 24.5 32 nC -- 6 -- nC -- 14.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A ISM -- -- 210 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 52.4 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 65 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 52.4 A, dIF / dt = 100 A/s -- 125 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 300 H, IAS = 52.4 A, VDD = 25 V, RG = 25 , starting TJ = 25C. 3. ISD 52.4 A, di/dt 300 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQP50N06L -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : ID, Drain Current [A] 10 2 10 ID, Drain Current [A] 2 1 1 10 10 175 25 Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 25V 2. 250s Pulse Test -55 0 0 10 -1 10 0 10 1 10 0 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 50 IDR, Reverse Drain Current [A] R DS(O N) [m ], Drain-Source On-Resistance 60 VGS = 10V 40 VGS = 5V 30 1 10 20 10 Note : TJ = 25 Notes : 1. VGS = 0V 2. 250s Pulse Test 25 175 0 0 25 50 75 100 125 150 175 200 0 10 ID, Drain Current [A] 0.2 1.0 1.2 1.4 1.6 12 Coss Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz 2000 Crss V G S , Gate-Source Voltage [V] Capacitance [pF] 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 1000 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4000 0.4 10 VDS = 30V VDS = 48V 8 6 4 2 Note : ID = 52.4A 0 0 -1 10 0 0 10 10 20 30 40 50 1 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQP50N06L -- N-Channel QFET(R) MOSFET Typical Characteristics 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.1 1.5 1.0 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 0.5 150 Notes : 1. VGS = 10 V 2. ID = 26.2 A 0.0 -100 200 -50 50 100 150 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3 200 60 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 50 100 s 2 10 1 ms 10 ms DC 1 10 Notes : 40 30 20 10 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 10 -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 10 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 0 .2 N otes : 1 . Z J C( t ) = 1 . 2 4 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .1 10 -1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] (t),Thermal Thermal Response ZZJC (t), Response [oC/W] JC ID, Drain Current [A] 0 o o 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 175 FQP50N06L -- N-Channel QFET(R) MOSFET Typical Characteristics (continued) 50K 200nF 12V FQP50N06L -- N-Channel QFET(R) MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time FQP50N06L -- N-Channel QFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 VDD FQP50N06L -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. 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