FQP50N06L — N-Channel QFET® MOSFET
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQP50N06L/D
FQP50N06L
N-Channel QFET® MOSFET
60 V, 52.4 A, 21 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V,
ID = 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
TO-220
GDSG
S
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP50N06L Unit
VDSS Drain-Source Voltage 60 V
IDDrain Current - Continuous (TC = 25°C) 52.4 A
- Continuous (TC = 100°C) 37.1 A
IDM Drain Current - Pulsed (Note 1) 210 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ
IAR Avalanche Current (Note 1) 52.4 A
EAR Repetitive Avalanche Energy (Note 1) 12.1 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PDPower Dissipation (TC = 25°C) 121 W
- Derate above 25°C 0.81 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TLMaximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds 300 °C
Symbol Parameter FQP50N06L Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 1.24 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
FQP50N06L — N-Channel QFET® MOSFET
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Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQP50N06L FQP50N06L TO-220 Tube N/A N/A 50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 300 μH, IAS = 52.4 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 52.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA60 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C -- 0.06 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 μA
VDS = 48 V, TC = 150°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA1.0 -- 2.5 V
RDS(on) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 26.2 A
VGS = 5 V, ID =26.2 A
--
--
0.017
0.020
0.021
0.025 Ω
gFS Forward Transconductance VDS = 25 V, ID = 26.2 A -- 40 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1250 1630 pF
Coss Output Capacitance -- 445 580 pF
Crss Reverse Transfer Capacitance -- 90 120 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 30 V, ID = 26.2 A,
RG = 25 Ω
(Note 4)
-- 20 50 ns
trTurn-On Rise Time -- 380 770 ns
td(off) Turn-Off Delay Time -- 80 170 ns
tfTurn-Off Fall Time -- 145 300 ns
QgTotal Gate Charge VDS = 48 V, ID = 52.4 A,
VGS = 5 V
(Note 4)
-- 24.5 32 nC
Qgs Gate-Source Charge -- 6 -- nC
Qgd Gate-Drain Charge -- 14.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 210 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 52.4 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 52.4 A,
dIF / dt = 100 A/μs
-- 65 -- ns
Qrr Reverse Recovery Charge -- 125 -- nC
FQP50N06L — N-Channel QFET® MOSFET
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Typical Characteristics
0 1020304050
0
2
4
6
8
10
12
VDS = 30V
VDS = 48V
※ Not e : ID
= 52.4A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
0
1000
2000
3000
4000 C
iss = Cgs + Cgd (Cds = short ed)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
101
102
175℃※ Not es :
1. VGS = 0V
2. 250μs Pulse Test
25℃
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
VGS = 10V
VGS = 5V
※ Not e : TJ = 25℃
RDS(ON) [mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0246810
100
101
102
175℃
25℃
-55℃
※ Notes :
1. VDS = 25V
2. 250μs Pulse Test
ID, Drain Current [A]
V
GS, Gate-Source Voltage [V]
10-1 100101
100
101
102
VGS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
※ Notes :
1. 250μs Pulse Test
2. TC
= 25℃
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
FQP50N06L — N-Channel QFET® MOSFET
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Typical Characteristics (continued)
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
1 . Z θJC
(t) = 1.24 /W M ax.℃
2 . D u t y Fa c t o r , D = t 1/t2
3 . T JM - TC = PDM * ZθJC
(t)
sin g le p u lse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
ID, Drain Current [A]
TC, Case Temperature [ ]℃
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
※ Not es :
1. VGS = 10 V
2. ID
= 26.2 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID
= 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
ZθJC(t), Thermal Response [oC/W]
FQP50N06L — N-Channel QFET® MOSFET
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Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
FQP50N06L — N-Channel QFET® MOSFET
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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQP50N06L — N-Channel QFET® MOSFET
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7
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
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