COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value MJ900 MJ1000 VCBO VCEO 60 Vdc Collector-Base Voltage Collector-EmitterVoltage MJ901 MJ1001 80 MJ900 MJ1000 60 Vdc IB=0 MJ901 MJ1001 VEBO Emitter-Base Voltage IC Collector Current Unit IC(RMS) Page 1 of 4 MJ900 MJ1000 MJ901 MJ1001 MJ900 MJ1000 MJ901 MJ1001 80 5.0 Vdc 8.0 Adc COMSET SEMICONDUCTORS MJ900/901/1000/1001 IB MJ900 MJ1000 MJ901 MJ1001 Base Current @ TC < 25 PT Power Dissipation TJ MJ900 MJ1000 MJ901 Derate above MJ1001 25C 0.1 Adc 90 Watts 0.515 W/C -65 to +200 C Junction Temperature MJ900 MJ1000 MJ901 MJ1001 TS Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Page 2 of 4 MJ900 MJ1000 MJ901 MJ1001 Value Unit 1.94 C/W COMSET SEMICONDUCTORS MJ900/901/1000/1001 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO ICEO IEBO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) Min Typ Mx Unit MJ900 MJ1000 60 - - MJ901 MJ1001 80 - - VCE=30 Vdc, IB=0 MJ900 MJ1000 - - VCE=40 Vdc, IB=0 MJ901 MJ1001 - - VBE=5.0 Vdc, IC=0 MJ900 MJ1000 MJ901 MJ1001 - - VCB=60 V, RBE=1.0 k ohm MJ900 MJ1000 - - VCB=80 V, RBE=1.0 k ohm MJ901 MJ1001 - VCB=60 V, RBE=1.0 k ohm, TC=150C MJ900 MJ1000 - VCB=80 V, RBE=1.0 k ohm, TC=150C MJ901 MJ1001 MJ900 MJ1000 MJ901 MJ1001 MJ900 MJ1000 MJ901 MJ1001 IC=100 mAdc, IB=0 Vdc 500 Adc 2.0 mAdc 1.0 ICER Collector-Emitter Leakage Current IC=3.0 A, IB=12 mAdc VCE(SAT) Collector-Emitter saturation Voltage (*) VF VBE Base-Emitter Voltage (*) mAdc 5.0 - - - - 2.0 Vdc - - 4.0 IF=3 A MJ900 MJ1000 MJ901 MJ1001 - 1.8 - V IC=3.0 Adc, VCE=3.0Vdc MJ900 MJ1000 MJ901 MJ1001 - - 2.5 V IC=8.0 A, IB=40 mAdc Forward Voltage (pulse method) - Page 3 of 4 COMSET SEMICONDUCTORS MJ900/901/1000/1001 hfe VCE=3.0 Vdc, IC=3.0 Adc MJ900 MJ1000 MJ901 MJ1001 1000 VCE=4.0 Vdc, IC=3.0 Adc MJ900 MJ1000 MJ901 MJ1001 750 DC Current Gain (*) ! ! ! For PNP types current and voltage values are negative ! ! ! (*) Pulse Width 300 s, Duty Cycle 2.0% MECHANICAL DATA DIMENSIONS A B C D E G H L M N P mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 Page 4 of 4 - - - -