MJ900/901/1000/1001
Page 1 of 4
COMSET
SEMICONDUCTORS
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
MJ900
MJ1000 60
VCBO Collector-Base Voltage
MJ901
MJ1001 80
Vdc
MJ900
MJ1000 60
VCEO Collector-EmitterVoltage IB=0
MJ901
MJ1001 80
Vdc
VEBO Emitter-Base Voltage
MJ900
MJ1000
MJ901
MJ1001
5.0 Vdc
ICCollector Current IC(RMS)
MJ900
MJ1000
MJ901
MJ1001
8.0 Adc
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas
transistors in monolithic Darlington configuration, and are mounted in
JEDEC TO-3 metal case. They are intended for use in power linear and
switching applications.
PNP types are the MJ900 and MJ901, and their complementary NPN
types are the MJ1000 and MJ1001 respectively.
COMPLEMENTARY POWER
DARLINGTONS TO-3
MJ900/901/1000/1001
Page 2 of 4
COMSET
SEMICONDUCTORS
IBBase Current
MJ900
MJ1000
MJ901
MJ1001
0.1 Adc
@ TC < 25° 90 Watts
PTPower Dissipation Derate above
25°C
MJ900
MJ1000
MJ901
MJ1001 0.515 W/°C
TJJunction Temperature
TSStorage Temperature
MJ900
MJ1000
MJ901
MJ1001
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-C Thermal Resistance, Junction to Case
MJ900
MJ1000
MJ901
MJ1001
1.94 °C/W
MJ900/901/1000/1001
Page 3 of 4
COMSET
SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
MJ900
MJ1000 60 - -
VCEO Collector-Emitter
Breakdo wn Vo ltag e (*) IC=100 mAdc, IB=0 MJ901
MJ1001 80 - - Vdc
VCE=30 Vdc, IB=0 MJ900
MJ1000 --
ICEO Collector Cutoff Current
VCE=40 Vdc, IB=0 MJ901
MJ1001 --
500 µAdc
IEBO Emitter Cutoff Current VBE=5.0 Vdc, IC=0
MJ900
MJ1000
MJ901
MJ1001
--2.0mAdc
VCB=60 V, RBE=1.0 k ohm MJ900
MJ1000 --
VCB=80 V, RBE=1.0 k ohm MJ901
MJ1001 --
1.0
VCB=60 V, RBE=1.0 k ohm,
TC=150°C MJ900
MJ1000 --
ICER
Collector-Emitter Leakage
Current
VCB=80 V, RBE=1.0 k ohm,
TC=150°C MJ901
MJ1001 --
5.0
mAdc
IC=3.0 A, IB=12 mAdc MJ900
MJ1000
MJ901
MJ1001
--2.0
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=8.0 A, IB=40 mAdc
MJ900
MJ1000
MJ901
MJ1001
--4.0
Vdc
VFForward Voltage (pulse
method) IF=3 A
MJ900
MJ1000
MJ901
MJ1001
-1.8 -V
VBE Base-Emitter Voltage (*) IC=3.0 Adc, VCE=3.0Vdc
MJ900
MJ1000
MJ901
MJ1001
--2.5V
MJ900/901/1000/1001
Page 4 of 4
COMSET
SEMICONDUCTORS
VCE=3.0 Vdc, IC=3.0 Adc
MJ900
MJ1000
MJ901
MJ1001
1000 --
hfe DC Current Gain (*)
VCE=4.0 Vdc, IC=3.0 Adc
MJ900
MJ1000
MJ901
MJ1001
750 --
-
! ! ! For PNP types current and voltage values are negative ! ! !
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA
DIMENSIONS
mm
A 25,51
B 38,93
C 30,12
D 17,25
E 10,89
G 11,62
H8,54
L1,55
M 19,47
N1
P4,06
