TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D
Low rDS(on) ...5 Typical
D
Avalanche Energy ...30 mJ
D
Eight Power DMOS-Transistor Outputs of
150-mA Continuous Current
D
500-mA Typical Current-Limiting Capability
D
Output Clamp Voltage . . . 50 V
D
Four Distinct Function Modes
D
Low Power Consumption
description
This power logic 8-bit addressable latch controls
open-drain DMOS-transistor outputs and is
designed for general-purpose storage
applications in digital systems. Specific uses
include working registers, serial-holding registers,
and decoders or demultiplexers. This is a multi-
functional device capable of storing single-line
data in eight addressable latches and 3-to-8
decoder or demultiplexer with active-low DMOS
outputs.
Four distinct modes of operation are selectable by
controlling the clear (CLR) and enable (G) inputs
as enumerated in the function table. In the
addressable-latch mode, data at the data-in (D)
terminal is written into the addressed latch. The
addressed DMOS-transistor output inverts the
data input with all unaddressed DMOS-transistor
outputs remaining in their previous states. In the
memory mode, all DMOS-transistor outputs
remain in their previous states and are unaffected
by the data or address inputs. To eliminate the
possibility of entering erroneous data in the latch,
enable G should be held high (inactive) while the
address lines are changing. In the 3-to-8 decoding
or demultiplexing mode, the addressed output is
inverted with respect to the D input and all other
outputs are off. In the clear mode, all outputs are off and unaffected by the address and data inputs. When data
is low for a given output, the DMOS-transistor output is off. When data is high, the DMOS-transistor output has
sink-current capability.
Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous
sink-current capability. Each output provides a 500-mA typical current limit at TC = 25°C. The current limit
decreases as the junction temperature increases for additional device protection.
The TPIC6B259 is characterized for operation over the operating case temperature range of –40°C to 125°C.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
NC
VCC
S0
DRAIN0
DRAIN1
DRAIN2
DRAIN3
S1
GND
GND
NC
CLR
D
DRAIN7
DRAIN6
DRAIN5
DRAIN4
G
S2
GND
DW OR N PACKAGE
(TOP VIEW)
OUTPUT OF
ADDRESSED
DRAIN
EACH
OTHER
DRAIN
INPUTS FUNCTION
CLR G
FUNCTION TABLE
LATCH SELECTION TABLE
SELECT INPUTS DRAIN
ADDRESSED
0
1
2
3
4
5
6
7
L
L
L
L
H
H
H
H
D
H
HL
LH
LL
HQio
Qio
Qio
Qio
H H X Memory
L
LL
LH
LL
HH
H8-Line
Demultiplexer
L H X H H Clear
Addressable
Latch
S2 S1 S0
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
NC – No internal connection
H = high level, L = low level
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
2POST OFFICE BOX 655303 DALLAS, TEXAS 75265
logic symbol
0
3
S0 8
S1
2
12
S2
G8
13
Z9
18
D
Z10
19
8M 0/7
9,0D
9,1D
9,2D
9,3D
9,4D
9,5D
9,6D
9,7D
10,0R DRAIN0
4
DRAIN1
5
DRAIN2
6
DRAIN3
7
DRAIN4
14
DRAIN5
15
DRAIN6
16
DRAIN7
17
10,1R
10,2R
10,3R
10,4R
10,5R
10,6R
10,7R
G
CLR
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
logic diagram (positive logic)
C1
S0
S2
S1
D
G
CLR
4DRAIN0
5DRAIN1
6DRAIN2
7DRAIN3
14 DRAIN4
15 DRAIN5
16 DRAIN6
17 DRAIN7
9,10,11 GND
3
12
8
18
13
19
D
CLR
C1
D
CLR
C1
D
CLR
C1
D
CLR
C1
D
CLR
C1
D
CLR
C1
D
CLR
C1
D
CLR
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
4POST OFFICE BOX 655303 DALLAS, TEXAS 75265
schematic of inputs and outputs
EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS
VCC
Input
GND GND
DRAIN
50 V
20 V
25 V
12 V
absolute maximum ratings over the recommended operating case temperature range (unless
otherwise noted)
Logic supply voltage, VCC (see Note 1) 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic input voltage range, VI 0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power DMOS drain-to-source voltage, VDS (see Note 2) 50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous source-to-drain diode anode current 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed source-to-drain diode anode current (see Note 3) 1 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) 500 mA. . . . . . . . . . . . . . . . . . .
Continuous drain current, each output, all outputs on, ID, TC = 25°C 150 mA. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak drain current single output, IDM, TC = 25°C (see Note 3) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single-pulse avalanche energy, EAS (see Figure 4) 30 mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche current, IAS (see Note 4) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipating Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, TJ –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating case temperature range, TC –40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range 65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. All voltage values are with respect to GND.
2. Each power DMOS source is internally connected to GND.
3. Pulse duration 100 µs and duty cycle 2%.
4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 200 mH, IAS = 0.5 A (see Figure 4).
DISSIPATION RATING TABLE
PACKAGE TC 25°C
POWER RATING DERATING FACTOR
ABOVE TC = 25°CTC = 125°C
POWER RATING
DW 1389 mW 11.1 mW/°C278 mW
N1050 mW 10.5 mW/°C263 mW
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
recommended operating conditions
MIN MAX UNIT
Logic supply voltage, VCC 4.5 5.5 V
High-level input voltage, VIH 0.85 VCC V
Low-level input voltage, VIL 0.15 VCC V
Pulsed drain output current, TC = 25°C, VCC = 5 V (see Notes 3 and 5) 500 500 mA
Setup time, D high before G, tsu (see Figure 2) 20 ns
Hold time, D high after G, th(see Figure 2) 20 ns
Pulse duration, tw (see Figure 2) 40 ns
Operating case temperature, TC–40 125 °C
electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)DSX Drain-to-source breakdown
voltage ID = 1 mA 50 V
VSD Source-to-drain diode forward
voltage IF = 100 mA 0.85 1 V
IIH High-level input current VCC = 5.5 V, VI = VCC 1µA
IIL Low-level input current VCC = 5.5 V, VI = 0 –1 µA
ICC
Logic su
pp
ly current
VCC =55V
All outputs off 20 100
µA
I
CC
Logic
s
u
ppl
y
c
u
rrent
V
CC =
5
.
5
V
All outputs on 150 300 µ
A
INNominal current VDS(on) = 0.5 V, IN = ID,T
C = 85°C,
See Notes 5, 6, and 7 90 mA
IDSX
Off state drain current
VDS = 40 V, VCC = 5.5 V 0.1 5
µA
I
DSX
Off
-
state
drain
c
u
rrent
VDS = 40 V, VCC = 5.5 V, TC = 125°C 0.15 8 µ
A
ID = 100 mA, VCC = 4.5 V 4.2 5.7
rDS(on) Static drain-to-source on-state
resistance ID = 100 mA,
TC = 125°CVCC = 4.5 V, See Notes 5 and 6
and Figures 6 and 7 6.8 9.5
ID = 350 mA, VCC = 4.5 V 5.5 8
switching characteristics, VCC = 5 V, TC = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH Propagation delay time, low-to-high-level output from D 150 ns
tPHL Propagation delay time, high-to-low-level output from D C
L
= 30 pF, I
D
= 100 mA, 90 ns
trRise time, drain output
L,D,
See Figures 1, 2, and 8 200 ns
tfFall time, drain output 200 ns
taReverse-recovery-current rise time IF = 100 mA, di/dt = 20 A/µs, 100
ns
trr Reverse-recovery time
Fµ
See Notes 5 and 6 and Figure 3 300
ns
NOTES: 3. Pulse duration 100 µs and duty cycle 2%.
5. Technique should limit TJ – TC to 10°C maximum.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5 V at TC = 85°C.
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
6POST OFFICE BOX 655303 DALLAS, TEXAS 75265
thermal resistance
PARAMETER TEST CONDITIONS MIN MAX UNIT
RθJA
Thermal resistance junction to ambient
DW package
All 8 out
p
uts with equal
p
ower
90 °
C/W
R
θJA
Thermal
resistance
j
u
nction
-
to
-
ambient
N package
All
8
o
u
tp
u
ts
w
ith
eq
u
al
po
w
er
95
°C/W
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT
5 V 24 V
VCC
DRAIN
GND
CLR
RL = 235
Output
D
Word
Generator
(see Note A)
0 V
5 V
0.5 V
24 V
D
G
G
DRAIN5
CLR
VOLTAGE WAVEFORMS
S0 0 V
5 V
S1 0 V
5 V
S2 0 V
5 V
5 V
5 V
0 V
0 V
0.5 V
24 V
DRAIN3
S2
S1
S0
CL = 30 pF
(see Note B)
DUT
3
8
12
13
19
18
2
9, 10, 11
4–7,
14–17
ID
NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz,
ZO = 50 .
B. CL includes probe and jig capacitance.
Figure 1. Resistive-Load Test Circuit and Voltage Waveforms
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
SWITCHING TIMES
G
D
5 V
0 V
5 V
0 V
50%
Output 24 V
0.5 V
90%
10%
tPLH
tr
50%
90% 10%
tPHL
tf
5 V
0 V
50%
D5 V
0 V
50% 50%
tsu th
tw
INPUT SETUP AND HOLD WAVEFORMS
G
5 V
24 V
DUT
VCC CLR
DRAIN
GND
D
235
ID
TEST CIRCUIT
Word
Generator
(see Note A)
G
CL = 30 pF
(see Note B)
Output
Word
Generator
(see Note A)
219
9, 10,11
13
18
4–7,
14–17
NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz,
ZO = 50 .
B. CL includes probe and jig capacitance.
Figure 2. Test Circuit, Switching Times, and Voltage Waveforms
+
2500 µF
250 V
L = 1 mH
IF
(see Note A)
RG
VGG
(see Note B)
Driver
TP A
50
Circuit
Under
Test
DRAIN
25 V
t1t3
t2
TP K
TEST CIRCUIT
0.1 A
IF
0
IRM
25% of IRM
ta
trr
di/dt = 20 A/µs
CURRENT WAVEFORM
NOTES: A. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the
TP A test point.
B. The VGG amplitude and RG are adjusted for di/dt = 20 A/µs. A VGG double-pulse train is used to set IF = 0.1 A, where t1 = 10 µs,
t2 = 7 µs, and t3 = 3 µs.
Figure 3. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
8POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT
5 V 15 V
VCC
DRAIN
GND
CLR
200 mH
VDS
D
Word
Generator
(see Note A) GDUT
10.5
9, 10, 11
twtav
IAS = 0.5 A
V(BR)DSX = 50 V
MIN
VOLTAGE AND CURRENT WAVEFORMS
Input
ID
VDS
See Note B
S0
S1
S2
3
8
12
19
18
13
ID
2
4–7,
14–17
5 V
0 V
NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, ZO = 50 .
B. Input pulse duration, tw, is increased until peak current IAS = 0.5 A.
Energy test level is defined as EAS = IAS × V(BR)DSX × tav/2 = 30 mJ.
Figure 4. Single-Pulse Avalanche Energy Test Circuit and W aveforms
TYPICAL CHARACTERISTICS
2
1
10
4
0.1 0.2 10.4 2 104
0.2
0.1
0.4
I – Peak Avalanche Current A
AS
PEAK AVALANCHE CURRENT
vs
TIME DURATION OF AVALANCHE
tav – Time Duration of Avalanche – ms
TC = 25°C
10
8
4
2
0
6
0 100 200 300 400
14
12
16
DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
18
500 600 700
ID – Drain Current – mA
VCC = 5 V
See Note A
TC = 25°C
TC = –40°C
TC = 125°C
DS(on)– Drain-to-Source On-State Resistance –r
NOTE C: Technique should limit TJ – TC to 10°C maximum.
Figure 5 Figure 6
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
VCC – Logic Supply Voltage – V
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
LOGIC SUPPLY VOLTAGE
DS(on)– Static Drain-to-Source On-State Resistance –r
4
3
1
04 4.5 5 5.5
5
7
8
6 6.5 7
6
2
TC = 125°C
TC = 25°C
TC = – 40°C
ID = 100 mA
See Note A
Switching Time – ns
SWITCHING TIME
vs
CASE TEMPERATURE
–50 TC – Case Temperature – °C
ID = 100 mA
See Note A
200
150
100
50
250
300
tPHL
tPLH
tr
tf
25 0 25 50 75 100 125
Figure 7 Figure 8
NOTE D: Technique should limit TJ – TC to 10°C maximum.
TPIC6B259
POWER LOGIC 8-BIT ADDRESSABLE LATCH
SLIS030 – APRIL 1994 – REVISED JULY 1995
10 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
THERMAL INFORMATION
– Maximum Continuous Drain Current
MAXIMUM CONTINUOUS
DRAIN CURRENT OF EACH OUTPUT
vs
NUMBER OF OUTPUTS CONDUCTING
SIMULTANEOUSLY
N – Number of Outputs Conducting Simultaneously
of Each Output – A
D
I
012345678
VCC = 5 V
TC = 25°C
TC = 125°C
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
– Maximum Peak Drain Current of Each Output – A
MAXIMUM PEAK DRAIN CURRENT
OF EACH OUTPUT
vs
NUMBER OF OUTPUTS CONDUCTING
SIMULTANEOUSLY
D
N – Number of Outputs Conducting Simultaneously
I
0.15
0.05
0.4
012 34 5
0.3
0.2
0.35
0.5
678
0.45
0.25
0.1 VCC = 5 V
TC = 25°C
d = tw/tperiod
= 1 ms/tperiod
d = 10%
d = 20%
d = 50%
d = 80%
TC = 100°C
Figure 9 Figure 10
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TPIC6B259DW ACTIVE SOIC DW 20 25 TBD CU NIPDAU Level-1-220C-UNLIM
TPIC6B259DWG4 ACTIVE SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPIC6B259DWR ACTIVE SOIC DW 20 2000 TBD CU NIPDAU Level-1-220C-UNLIM
TPIC6B259DWRG4 ACTIVE SOIC DW 20 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPIC6B259N ACTIVE PDIP N 20 20 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 29-May-2007
Addendum-Page 1
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPIC6B259DWR SOIC DW 20 2000 330.0 24.4 10.8 13.1 2.65 12.0 24.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Dec-2010
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPIC6B259DWR SOIC DW 20 2000 346.0 346.0 41.0
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Dec-2010
Pack Materials-Page 2
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