OLH1047/1048/1049 Hermetic Phototransistor Optocoupler ISO LINK 8 2 0.390 0.005 7 6 5 7 BASE s ANODE 0.320 Max. OLH XXXX XXYY 0.300 Typ. COLLECTOR 1 6 2 3 0.020 Min. CATHODE 5 0.125 Min. 0.018 0.002 SCHEMATIC Features Current transfer ratio guaranteed over -55C to +100C ambient temp. range 3000Vdc electrical isolation Standard 8-pin DIP configuration High current transfer ratio at low input current Base lead available for transistor biasing 100% hi-rel screenings are offered 0.010 0.002 0.150 Max. EMITTER 3 4 0.100 0.010 PACKAGE OUTLINE Description The OLH1047/ 48/ 49 are designed especially for hi-rel applications requiring optical isolation with high current transfer ratio and low saturation Vce. Each optocoupler consists of a light emitting diode and a NPN silicon phototransistor mounted and coupled in an 8-pin hermetically sealed DIP package. The low input current makes the OLH1047 /48 /49 well suited for direct CMOS to LSTTL / TTL interfaces. The electrical parameters of the OLH1047 /48 /49 are identical to the JEDEC registered 4N47, 4N48, and 4N49 respectively. NOTES: 1. Measured between pins 1,2,3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. TA = 25 C and duration = 1 second. 2. Derate linearly at 3.0 mW / C above 25 C 3. Values applies for Pw 1S, PRR 300 pps . Absolute Maximum Ratings Coupled Input to Output Isolation Voltage Storage Temperature Range Operation Temperature Range Lead Temperature 1.6 mm from case for 10 sec. 3000Vdc -65C to +150C -55C to +125C 240C Input Diode Average Input Current Peak Forward Current Reverse Voltage Power Dissipation 40mA 1A 2.0 V 70 mW Output Detector Collector - Emitter Voltage Emitter - Base Voltage Collector - Base Voltage Continous Collector Current Power Dissipation 40 V 7V 45 V 50 mA 300 mW 2 ELECTRICAL CHARACTERISTIC ( TA = 25 C , Unless Otherwise Specified ) Parameter On-State Collector Current On-State Coll.-Base Current Saturation Voltage Symbol IC (ON) ICB(ON) 1047 1048 1049 Min Typ. Max Min Typ. Max Min Typ. Max Units I F = 1 mA, VCE = 5.0V 2.8 mA I F = 2 mA, VCE = 5.0V, TA = -55C 1.0 2.0 mA I F = 2 mA, VCE = 5.0V, TA = 100C 30 30 A I F = 10 mA, VCB = 5.0V V I F = 2mA, I C =0.5mA V I F = 2mA, I C =1.0mA V I F = 2mA, I C =2.0mA 1.0 0.7 1.4 0.5 30 VCE(SAT) 5.0 Test Conditions mA 0.5 10 2.0 0.3 0.3 0.3 Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base BVCEO 40 40 40 V I CE = 1 mA BVCBO 45 45 45 V I CB = 100 A BVEBO 7 7 7 V I EB = 100 A Off-State Leakage Current Collector to Emitter I CE(OFF) VCE = 20V Collector to Base Input Forward Voltage Input Reverse Current I CB(OFF) VF RI-O Input to Output Capacitance C I-O Rise Time Fall Time 100 100 nA 100 100 100 A VCE = 20V, TA =100 C 10 10 10 nA VCB = 20V 2,3 1.0 1.7 1.0 1.7 1.0 1.7 V I F = 10mA, TA = -55C 1 0.8 1.5 0.8 1.5 0.8 1.5 V I F = 10mA 1 0.7 1.3 0.7 1.3 0.7 1.3 V I F = 10mA, TA = 100C 1 100 A V R = 2.0V V I-O = 1000Vdc 1 5 pF V I-O = 0V, f = 1 MHz 1 IR Input to Output Resistance 100 Fig. Note 100 100 1011 1011 1011 5 5 tr 10 20 10 20 15 25 S VCC = 10V, RL = 100 tf 10 20 10 20 15 25 S I F = 5mA 4 ALL TYPICAL @ TA = 25C TYPICAL PERFORMANCE CURVES 1.8 125 C 10 NORMALIZED COLLECTOR CURRENT Pulse Operation -55 C 25 C 1 .1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.6 NORMALIZED TO: 1.4 VCE = 5V I F = 10mA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 0 2 V F - FORWARD VOLTAGE ( V ) 4 6 8 10 12 14 16 Fig. 2 - Normalized Ic vs. I 1.8 NORMALIZED TO: 1.6 V CE = 5V TA = 25 C 1.4 1.2 I F = 10 mA 1.0 0.8 I F = 1 mA 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Fig. 3 - Normalized CTR vs. Temperature INPUT IF V CC Pulse Width = 100S Duty Cycle = 1% IF 0 90 % V OUT 10 % 0 tr 18 20 I F = FORWARD CURRENT ( mA ) Fig. 1 - Diode Forward Characteristics NORMALIZED CTRCE I F - FORWARD CURRENT ( mA ) 100 V OUT tf 100 Fig. 4 - Switching Test Circuit RL F 22