Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 50 Vdc Collector - Base Voltage VCBO 50 Vdc Emitter - Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 -- Vdc Collector - Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 50 -- Vdc Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO -- 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 50 nAdc OFF CHARACTERISTICS Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N5209 2N5210 100 200 300 600 (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5209 2N5210 150 250 -- -- (IC = 10 mAdc, VCE = 5.0 Vdc)(1) 2N5209 2N5210 150 250 -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE -- Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- 0.7 Vdc Base - Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) VBE(on) -- 0.85 Vdc fT 30 -- MHz Ccb -- 4.0 pF 150 250 600 900 SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 2N5209 2N5210 -- Noise Figure (IC = 20 Adc, VCE = 5.0 Vdc, RS = 22 k, f = 1.0 kHz) 2N5209 2N5210 NF -- -- 3.0 2.0 dB (IC = 20 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) 2N5209 2N5210 -- -- 4.0 3.0 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 A 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 3.0 mA 1.0 mA 300 A 100 A 0.3 0.2 RS 0 0.1 10 20 10 A 50 100 200 10 16 3.0 1.0 0.7 0.5 5.0 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 8.0 IC = 1.0 mA 100 A 10 A 4.0 30 A 0 10 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 16 100 A 100 70 50 3.0 mA 1.0 mA 30 300 A 20 10 7.0 5.0 30 A 10 A NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 IC = 10 mA 3.0 mA 1.0 mA 12 300 A 8.0 100 A 30 A 4.0 10 A BANDWIDTH = 1.0 Hz 0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Motorola Small-Signal Transistors, FETs and Diodes Device Data 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure 3 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 - 55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) - 0.4 TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 - 0.8 - 1.2 TJ = 25C to 125C - 1.6 - 2.0 - 55C to 25C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 - 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 4 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 9. "On" Voltages 20 500 300 200 100 VCE = 5.0 V TJ = 25C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current-Gain -- Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 Motorola reserves the right to make changes without further notice to any products herein. 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