1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 50 Vdc
Collector–Base Voltage VCBO 50 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) V(BR)CBO 50 — Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0) ICBO — 50 nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO — 50 nAdc
Order this document
by 2N5209/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc) 2N5209
2N5210
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5209
2N5210
(IC = 10 mAdc, VCE = 5.0 Vdc)(1) 2N5209
2N5210
hFE 100
200
150
250
150
250
300
600
—
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.7 Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc) VBE(on) — 0.85 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) fT30 — MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb — 4.0 pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5209
2N5210
hfe 150
250 600
900
—
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ, 2N5209
f = 1.0 kHz) 2N5210
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, 2N5209
f = 1.0 kHz) 2N5210
NF —
—
—
—
3.0
2.0
4.0
3.0
dB
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (OHMS)
3.010
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
en, NOISE VOLTAGE (nV)
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
IC = 10 mA
300
µ
A
30
µ
A
RS
≈
0
3.0 mA
1.0 mA 7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
RS
≈
0
f = 10 Hz 100 Hz
1.0 kHz
10 kHz
100 kHz
IC = 10 mA
3.0 mA
1.0 mA
300
µ
A
100
µ
A
10
µ
A
RS
≈
0
10
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
IC = 1.0 mA
500
µ
A
100
µ
A
10
µ
A
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
RS, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
VT, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz IC = 10 mA
3.0 mA
1.0 mA
300
µ
A
100
µ
A
30
µ
A
10
µ
A
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
IC = 10 mA
300
µ
A
100
µ
A
30
µ
A
3.0 mA
1.0 mA
10
µ
A
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h , DC CURRENT GAIN (NORMALIZED)
0.05 2.0 3.0 100.02 0.03
0.2 1.00.1 5.0
FE
VCE = 5.0 V
TA = 125
°
C
25
°
C
–55
°
C
0.7
0.5
0.50.2 0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 9. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0.01
0
–0.8
–1.2
–1.6
–2.4
TJ = 25
°
C
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
TJ = 25
°
C to 125
°
C
–55
°
C to 25
°
C
RVBE, BASE–EMITTER
θ
TEMPERATURE COEFFICIENT (mV/ C)
°
–0.4
–2.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
TJ = 25
°
C
Ccb
Cob Ceb Cib
1.0 2.0 5.03.0 7.0 10 20 30 50 70 100
500
300
200
70
50
100
VCE = 5.0 V
TJ = 25
°
C
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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