tm
©2011 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
March 2011
Absolute Maximum Ratings
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
ICCollector Current @ TC = 25oC80 A
Collector Current @ TC = 100oC40 A
ICM (1) Pulsed Collector Current 120 A
IFDiode Forward Current @ TC = 25oC40 A
Diode Forward Current @ TC = 100oC20 A
IFM (1) Pulsed Diode Maximum Forward Current 120 A
PDMaximum Power Dissipation @ TC = 25oC349 W
Maximum Power Dissipation @ TC = 100oC174 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Notes:
1: Repetitive rating: Pulse widt h limited by max . junction temperatur e
FGH40N60SMDF
600V, 40A Field Stop IGBT
G
E
C
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
General Description
Using Novel Field Stop IGBT Technology, Fair child’s new series
of Field Stop IGBTs offer the optimum performance for Solar
Inverter, U PS, SMPS, IH and PFC applications where low con-
duction and switching losses are essential.
2www.fairchildsemi.com
FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction to Case -0.43 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case -1.45 oC/W
RθJA Thermal Resistance, Junction to Ambient -40 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGH40N60SMDF FGH40N60SMDF TO-247 - - 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA600 - - V
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250μA-0.6 -V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 3.5 4.5 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -1.9 2.5 V
IC = 40A, VGE = 15V,
TC = 175oC-2.1 -V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-1880 -pF
Coes Output Capacitance -180 -pF
Cres Reverse Transfer Capacitance -50 -pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 25oC
-12 16 ns
trRise Time -20 28 ns
td(off) Turn-Off Delay Time -92 120 ns
tfFall Time -13 17 ns
Eon Turn-On Switching Loss -1.3 2.0 mJ
Eoff Turn-Off Switching Loss -0.26 0.34 mJ
Ets Total Switching Loss -1.56 2.34 mJ
td(on) Turn-On Delay Time
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 175oC
-15 -ns
trRise Time -22 -ns
td(off) Turn-Off Delay Time -116 -ns
tfFall Time -16 -ns
Eon Turn-On Switching Loss -2.1 -mJ
Eoff Turn-Off Switching Loss -0.6 -mJ
Ets Total Switching Loss -2.7 -mJ
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FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions Min. Typ. Max Units
QgTotal Gate Charge VCE = 400V, IC = 40A,
VGE = 15V
-119 180 nC
Qge Gate to Emitter Charge -13 20 nC
Qgc Gate to Collector Charge -58 90 nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 20A TC = 25oC - 1.3 1.7 V
TC = 175oC - 1.15 -
Erec Reverse Recovery Energy
IF =20A, dIF/dt = 200A/μs
TC = 175oC - 138 -uJ
trr Diode Reverse Recovery Time TC = 25oC - 70 100 ns
TC = 175oC - 210 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 250 350 nC
TC = 175oC - 1875 -
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FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0246
0
20
40
60
80
100
120
VGE = 8V
20V
TC = 25oC
15V 12V
10V
Collector Current, IC [A]
Co lle c to r-Em itte r Volta g e , V CE [V ]
0246
0
20
40
60
80
100
120
VGE = 8V
20V
TC = 175oC
15V 12V
10V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
01234
0
20
40
60
80
100
120
Co mm o n Emitter
VGE = 15V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Co llec to r -E mitter Vo ltag e , V
CE
[V]
024681012
0
30
60
90
120 Comm on Em itter
VCE = 20V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Gate-Emitter Voltage,V
GE
[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
80A
40A
IC = 20A
Common Em itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-EmitterCase Temperature, TC [oC]
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
40A 80A
Common Emitter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, V
GE
[V]
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FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
80A
IC = 20A
40A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, VCE [V]
Gate-E m itter Vo ltage , V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
40A 80A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, V
GE
[V]
0.1 1 10
0
1000
2000
3000
4000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V] 30
0 40 80 120
0
3
6
9
12
15
400V
Common E m itter
TC = 25oC
300V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Q
g
[nC]
1 10 100 1000
0.01
0.1
1
10
100
300
1ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. S in g le Puls e
10μs
100μs
Collector Current, Ic [A]
Collector-Em itter Voltag e, VCE [V ]
0 1020304050
1
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
td(on)
tr
Switching Time [ns]
Gate Resistance, R
G
[Ω]
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FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
0 1020304050
1
10
100
1000
Com mon E mitter
VCC = 400V , VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
20 30 40 50 60 70 80
1
10
100
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC tr
td(on)
Switching Time [ns]
Collec to r C u rre n t, IC [A]
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Collector Current, IC
[
A
]
0 1020304050
0.1
1
5
Comm on Em itter
VCC = 400V , VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance
,
R
G
[
Ω
]
20 30 40 50 60 70 80
0.1
1
6
Comm on Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Collec t or C u rre n t, IC [A]
1 10 100 1000
1
10
100
200
Safe Op eratin g Area
VGE = 15V, TC = 175oC
Collector Current, IC [A]
Co llec tor-Emitter Voltage, V CE [V]
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FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating Figure 20. Load Current Vs. Frequency
Figure 21. Forward Characteristics Figure 22. Reverse Current
Figure 23. Stored Charge Figure 24. Reverse Recovery Time
25 50 75 100 125 150 175
10
20
30
40
50
60
70
80
90
Common Em itter
VGE = 15V
Collector Current, IC [A]
Collector-EmitterCase Temperature, TC [oC]
1k 10k 100k 1M
0
10
20
30
40
50
60
70
80
90
100
110
120
Tc = 75oC
Square Wave
TJ < 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6Ω
Collector Current, IC [A]
Switching Frequency, f [Hz]
Tc = 100oC
0 0.5 1.0 1.5 2.0 2.5
1
10
100
TC = 25oC
TC = 175oC
Forward Voltage, V
F
[V]
Forward Current, IF [A]
TC = 25oC
TC = 175oC
0 100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
TC = 25oC
TC = 150oC
TC = 75oC
Reverse Current, ICES [uA]
Reverse Voltage,VR [V]
0 5 10 15 20 25 30 35 40 45
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
TC = 25oC
TC = 175oC
di/dt = 2 00 A/μsdi/dt = 100A/μs
Stored Recovery Charge, Q
rr
[nC]
Forwad Current, IF [A]
0 5 10 15 20 25 30 35 40 45
0
50
100
150
200
250
300
350
400
TC = 25oC
TC = 175oC
di/dt = 200A/μs
di/dt = 100A/μs
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
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FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 25.Transient Therma l Impedance of IGBT
1E-5 1E-4 1E-3 0.01 0.1 1
0.001
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
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FGH40N60SMDF Rev. B1
FGH40N60SMDF 600V, 40A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
FGH40N60SMDF 600V, 40A Field Stop IGBT
FGH40N60SMDF Rev. B1 www.fairchildsemi.com10
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Ultra FRFET™
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tm
®
tm
tm
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Rev. I53
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