Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4 1Publication Order Number:
BAV99WT1/D
BAV99WT1, BAV99RWT1
Preferred Devices
Dual Series Switching
Diodes
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Features
•Pb−Free Packages are Available
Suggested Applications
•ESD Protection
•Polarity Reversal Protection
•Data Line Protection
•Inductive Load Protection
•Steering Logic
MAXIMUM RATINGS (Each Diode)
Rating Symbol Value Unit
Reverse Voltage VR70 Vdc
Forward Current IF215 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Repetitive Peak Reverse Voltage VRRM 70 V
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
IF(AV) 715 mA
Repetitive Peak Forward Current IFRM 450 mA
Non−Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
IFSM 2.0
1.0
0.5
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in. Device Package Shipping†
ORDERING INFORMATION
BAV99WT1 SC−70 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
BAV99RWT1
SC−70
CASE 419, STYLE 10
BAV99WT1
SC−70
CASE 419, STYLE 9
3
CATHODE/ANODE
ANODE
1
CATHODE
2
12
3
CATHODE/ANODE
CATHODE ANODE
BAV99RWT1 SC−70 3000/Tape & Reel
1
2
3
MARKING
DIAGRAM
A7 = BAV99WT1
F7 = BAV99RWT1
D = Date Code
x7....D
SC−70
CASE 419
BAV99RWT1G SC−70
(Pb−Free) 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99WT1G SC−70
(Pb−Free) 3000/Tape & Reel
http://onsemi.com
BAV99WT1, BAV99RWT1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C
Derate above 25°CPD200
1.6 mW
mW/°C
Thermal Resistance Junction−to−Ambient RJA 625 °C/W
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°CPD300
2.4 mW
mW/°C
Thermal Resistance Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A) V(BR) 70 − Vdc
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR−
−
−
2.5
30
50
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz) CD− 1.5 pF
Forward Voltage (IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery T ime (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 trr − 6.0 ns
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR − 1.75 V
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Notes: (a) A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: (c) tp » trr
+10 V 2 k
820
0.1 F
DUT
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAV99WT1, BAV99RWT1
http://onsemi.com
3
CURVES APPLICABLE TO EACH DIODE
IR, REVERSE CURRENT (A)µ
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
TA = 25°C
TA = −40°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
BAV99WT1, BAV99RWT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE L
CN
AL
D
G
SB
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.032 0.040 0.80 1.00
D0.012 0.016 0.30 0.40
G0.047 0.055 1.20 1.40
H0.000 0.004 0.00 0.10
J0.004 0.010 0.10 0.25
K0.017 REF 0.425 REF
L0.026 BSC 0.650 BSC
N0.028 REF 0.700 REF
S0.079 0.095 2.00 2.40
0.05 (0.002)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 mm
inches
SCALE 10:1
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE−CATHODE
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Phone: 81−3−5773−3850
BAV99WT1/D
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