SPICE MODELS: 2N7002W 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * Low On-Resistance Low Gate Threshold Voltage A Low Input Capacitance D B C Low Input/Output Leakage Ultra-Small Surface Mount Package * * * * * * * Max 0.25 0.40 1.15 1.35 C 2.00 2.20 H D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 M Case: SOT-323 J D Moisture Sensitivity: Level 1 per J-STD-020C E L Drain Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 5, on Page 2 Terminal Connections: See Diagram Min A B S K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Dim G G Available in Lead Free/RoHS Compliant Version (Note 2) Mechanical Data * * SOT-323 Fast Switching Speed Gate L 0.25 0.40 M 0.10 0.18 a 0 8 All Dimensions in mm Marking (See Page 2): K72 Ordering & Date Code Information: See Page 2 Source Weight: 0.006 grams (approx.) Maximum Ratings @ TA = 25C unless otherwise specified Symbol 2N7002W Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS 1.0MW VDGR 60 V VGSS 20 40 V ID 115 73 800 mA Pd 200 1.60 mW mW/C RqJA 625 K/W Tj, TSTG -55 to +150 C Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100C Pulsed Total Power Dissipation (Note 1) Derating above TA = 25C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30099 Rev. 8 - 2 1 of 3 www.diodes.com 2N7002W a Diodes Incorporated Electrical Chacteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 60 70 3/4 V VGS = 0V, ID = 10mA IDSS 3/4 3/4 1.0 500 A VDS = 60V, VGS = 0V IGSS 3/4 3/4 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 3/4 2.0 V VDS = VGS, ID = 250mA RDS (ON) 3/4 1.8 2.6 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 3/4 A VGS = 10V, VDS = 7.5V gFS 80 3/4 3/4 mS Input Capacitance Ciss 3/4 22 50 pF Output Capacitance Coss 3/4 11 25 pF Reverse Transfer Capacitance Crss 3/4 2.0 5.0 pF Turn-On Delay Time tD(ON) 3/4 7.0 20 ns Turn-Off Delay Time tD(OFF) 3/4 11 20 ns OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25C @ TC = 125C Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 25C @ Tj = 125C On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Ordering Information Notes: VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W (Note 4) Device Packaging Shipping 2N7002W-7 SOT-323 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: 2N7002W-7-F. YM Marking Information K72 K72 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30099 Rev. 8 - 2 2 of 3 www.diodes.com 2N7002W 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 0.6 Tj = 25C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 0 3 2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 6 3.0 2.5 VGS = 5.0V, ID = 0.05A 2.0 VGS = 10V, ID = 0.5A 1.5 1.0 Tj = 25C 0.5 Pulse Width: 380us RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 5 4 0.0 5 4 ID = 500mA ID = 50mA 3 2 1 0 -55 -30 -5 20 45 70 95 120 145 170 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature DS30099 Rev. 8 - 2 3 of 3 www.diodes.com 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 2N7002W