BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. BS170 High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. MMBF170 D S D G TO-92 G S Absolute Maximum Ratings Symbol SOT-23 TA = 25C unless otherwise noted Parameter BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS 1M) 60 V VGSS Gate-Source Voltage ID 20 Drain Current - Continuous - Pulsed TJ, TSTG TL 800 mA C Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 C TA = 25C unless otherwise noted Parameter BS170 MMBF170 Units Maximum Power Dissipation Derate above 25C 830 6.6 300 2.4 mW mW/C Thermal Resistance, Junction to Ambient 150 417 C/W (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 1200 - 55 to 150 Symbol RJA 500 Operating and Storage Temperature Range Thermal Characteristics PD V 500 www.fairchildsemi.com 1 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor March 2010 Symbol TA=25C unless otherwise noted Parameter Conditions Type Min. All 60 Typ. Max. Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 100A V IDSS Zero Gate Voltage Drain Current VDS = 25V, VGS = 0V All 0.5 A IGSSF Gate - Body Leakage, Forward VGS = 15V, VDS = 0V All 10 nA ON CHARACTERISTICS (Notes 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 200mA gFS Forward Transconductance VDS = 10V, ID = 200mA VDS 2 VDS(on), ID = 200mA 2.1 3 V All All 0.8 1.2 5 BS170 320 MMBF170 320 All 24 All 17 30 pF All 7 10 pF ns mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz 40 pF Switching Characteristics (Notes 1) ton toff Turn-On Time Turn-Off Time VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25 BS170 10 VDD = 25V, ID = 500mA, VGS = 10V, RGEN = 50 MMBF170 10 VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25 BS170 10 VDD = 25V, ID = 500mA, VGS = 10V, RGEN = 50 MMBF170 10 ns Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. Ordering Information Part Number Package Package Type Lead Frame Pin array BS170 TO-92 BULK STRAIGHT DGS BS170_D26Z TO-92 Tape and Reel FORMING DGS BS170_D27Z TO-92 Tape and Reel FORMING DGS BS170_D74Z TO-92 AMMO FORMING DGS BS170_D75Z TO-92 AMMO FORMING DGS MMBF170 SOT-23 Tape and Reel (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 2 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 3 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (continued) (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 4 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (continued) (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 5 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 6 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 7 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 8 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 9 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Mechanical Dimensions ( TO-92 ) TO-92 Dimensions in Millimeters (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 10 SOT23-3L Packaging Configuration: F igure 1.0 Cus tomized Lab el Packaging Description: S OT 23-3L par ts ar e s hipped i n tape. T he carrier tape is made from a d issipative (carbon filled) polycarbonate resin. T he cover tape i s a m ultilay er film (Heat Activated Adhes ive in nature) primarily c omposed o f polyester film, adhes ive l ayer, seal ant, and anti-static s prayed ag ent. T hes e reeled parts i n s tandard option ar e s hipped with 3, 000 units per 7 " or 177mm diameter reel. T he r eels ar e dark blue in c olor and is made of polystyrene plas tic ( antistatic coated). O ther option c omes in 10,000 units per 13" or 330c m diameter reel. T his and s ome other options ar e des cribed in the P ackaging I nformation table. Antis tatic Cover Tape F63TNR Lab el T hes e f ull reel s are i ndividually labeled and plac ed inside a s tandar d immediate bo x made o f recyclable corrugated brown paper w ith a F airchild logo p rinting. One box contains five reel s maximum. And thes e immediate boxes are plac ed inside a labeled s hipping box which c omes i n different s izes depending on the number of parts s hipped. E mbosse d Carri er Tape 3P 3P 3P 3P SOT23-3L Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag S tandar d (no flow code) TN R 3, 000 D87Z SOT23-3L Unit Orientation TN R 10, 000 B arcode L abel 7" Dia 13" 193x 183x80 355x 333x40 Max qty per Box 15, 000 30, 000 Weight per unit (gm) 0. 0082 0. 0082 Weight per Reel (kg) 0. 1175 0. 4006 Reel Size Box Dimension (mm) Note/Comments B arcode Lab el 355m m x 333m m x 40m m Intermediate c ontainer f or 13" re el option B arcode L abel s ample B arcode Lab el LO T : CB V K 741B 019 QT Y : 3000 F S ID: MMS Z5221B SPEC : D/C1: D9842AB QT Y 1: SPEC REV: D/C2: QT Y 2: CP N: F AIRCHI LD S E MIC ONDUCT OR C ORP OR AT ION (F 63T NR) 193m m x 183m m x 80m m P izza B ox for S tandard O ption SOT23-3L Tape Leader and Trailer Configuration: F igure 2.0 C arrier Tape C over T ape C omponents Tr ailer Ta pe 300mm minimum or 75 em pty pock ets Leade r T ape 500mm minimum or 125 em pty pockets (c)2001 Fairchild Semiconductor Corporation October 2004, Rev. D1 (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 11 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor SOT-23 Std Tape and Reel Data SOT23-3L Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D0 D1 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT23-3L Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 8mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 October 2004, Rev. D1 (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 12 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor SOT-23 Std Tape and Reel Data, continued BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Mechanical Dimensions ( SOT-23 ) SOT-23 Dimensions in Millimeters (c) 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 www.fairchildsemi.com 13 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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