QS5U28
Transistor
Rev.A 1/4
2.5V Drive
Pch+SBD
MOS FET
QS5U28
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Each lead has same dimensions
TSMT5
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
(1) (3)(2)
(4)
(5)
2.8
1.6
0.4
1.9
2.9
0.950.95
Abbreviated symbol : U28
Schottky Barrier DIODE
zFeatures
1) The QS5U28 combines Pch MOS FET with
a Schottky barrier diode in TSMT5 p ackage.
2) Low on-st ate resistance with fast sw itching.
3) Low volt age drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zApplic ations
Load switch, DC/DC conversion
zPackaging specifications zEquivalent circuit
QS5U28
TR
3000
Type
Package
Code Taping
Basic ordering unit (pieces)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗2
∗1
(1) (2) (3)
(5) (4)
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceede
d.
∗1 ESD protection diode
∗2 Body diode
QS5U28
Transistor
Rev.A 2/4
zAbsolute maximum ratings (Ta=25°C)
∗1
∗1
∗3
∗3
∗3
∗2
Parameter VVDSS
Symbol
−20 VVGSS ±12 AID±2.0 AIDP ±8.0 AIS−1.0 AISP −8.0
PD0.9 °CTch 150
VVRM 25 VVR20 AIF1.0 AIFSM 3.0
PD0.7
°CTj 150
PD1.25
°CTstg −55 to +150
Limits Unit
W/TOTAL
W/ELEMENT
W/ELEMENT
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dispation
Channel temperature
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dispation
Junction temperature
Total power dispation
Range of strage temperature
Continuous
Pulsed
Continuous
Pulsed
<
MOSFET
>
Parameter Symbol Limits Unit
<
Di
>
Parameter Symbol Limits Unit
<
MOSFET AND Di
>
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−−±10 µAV
GS
= ±12V, V
DS
= 0V
VDD −15V
VDD −15V
Typ. Max. Unit Conditions
V
(BR) DSS
−20 −−VI
D
= −1mA, V
GS
= 0V
I
DSS
−−−1µAV
DS
= −20V, V
GS
= 0V
V
GS (th)
−0.7 −−2.0 V V
DS
= −10V, I
D
= −1mA
−90 125 mΩI
D
= −2A, V
GS
= −4.5V
R
DS (on)
−97 135 mΩI
D
= −2A, V
GS
= −4.0V
−175 245 mΩI
D
= −1A, V
GS
= −2.5V
1.6 −−SV
DS
= −10V, I
D
= −1A
C
iss
−450 −pF V
DS
= −10V
C
oss
−70
52 −pF V
GS
= 0V
C
rss
−10 −pF f=1MHz
t
d (on)
−16 −ns
I
D
= −1A
t
r
−32 −ns
t
d (off)
−15 −ns
V
GS
= −4.5V
t
f
−
4.8
−ns R
L
= 15Ω
Q
g
−
1.0
−nC R
G
= 10Ω
R
L
= 7.5Ω
R
G
= 10Ω
Q
gs
−
1.3
−nC V
GS
= −4.5V
Q
gd
−−nC
I
D
= −2A
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
<
MOSFET
>
∗ Pulsed
I
S
= −1.0V , V
GS
= 0V
Parameter Symbol Min. Typ. Max. Unit Conditions
−1.2V
SD
−− V
Forward voltage
<
MOSFET
>
Body diode (Source-drain)
I
F
= −1.0V
Parameter Symbol Min. Typ. Max. Unit Conditions
0.45V
F
−− V
Forward voltage
<
Di
>
V
R
= 20V
200I
R
−− µA
Reverse current
QS5U28
Transistor
Rev.A 3/4
zElectrical characteristic curves
0 0.5 1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : −V
GS
(V)
Fig.1
Typical Transfer Characteristic
s
0.001
0.01
DRAIN CURRENT :
−I
D
(A)
10
0.1
1
Ta=125°C
25°C
−25°C
75°C
V
DS
= −10V
Pulsed
DRAIN CURRENT : −I
D
(A)
Fig.2
Static Drain-Source On-State
Resistance vs. Drain Current (Ι
)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
0.10.01 1 1
0
10
100
1000
Ta=125°C
75°C
25°C
−25°C
VGS= −4.5V
Pulsed
0.10.01 1 10
10
100
DRAIN CURRENT : −I
D
(A)
Fig.3
Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ
)
1000
Ta=125°C
75°C
25°C
−25°C
V
GS
= −4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
DRAIN CURRENT : −I
D
(A)
Fig.4
Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ
)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
0.10.01 1 10
10
100
1000
Ta=125°C
75°C
25°C
−25°C
V
GS
= −2.5V
Pulsed
024681012
0
100
200
300
GATE-SOURCE VOLTAGE :
−
V
GS
(
V)
Fig.5 Static Drain-Source On-Sta
te
Resistance vs. Gate-Source
Voltage
400
500
I
D
= −1A
I
D
= −2A
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
0.01 0.1 1 1
0
10
100
DRAIN CURRENT : −I
D
(A)
1000
V
GS
=−2.5V
−4.0V
−4.5V
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
Fig.6
Static Drain-Source On-State
Resistance vs. Drain Current
0 0.4 0.6 1.00.2 0.8 1.2 1.4 1
.6
0.01
0.1
1
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.7 Reverse Drain Current vs
.
Source-Drain Voltage
REVERCE DRAIN CURRENT : −IDR (A
)
10
Ta=125°C
75°C
25°C
−25°C
V
GS
=0V
Pulsed
0.01 0.1 1 10 10
0
10
100
1000
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
CAPACITANCE : C (pF)
Ta=25°C
f=1MH
Z
V
GS
=0V
C
iss
C
oss
C
rss
0.01 0.1 1 1
0
1
10
100
DRAIN CURRENT : −I
D
(A)
Fig.9 Switching Characteristic
s
SWITCHING TIME : t (ns)
1000
td(off)
tr
td(on)
tf
Ta=25°C
VDD= −15V
VGS= −4.5V
RG=10Ω
Pulsed
QS5U28
Transistor
Rev.A 4/4
024135
0
1
2
3
4
5
6
7
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : −VGS (V)
8
6
Ta=25°C
V
DD
= −15V
I
D
= −2A
R
G
=10Ω
Pulsed
Fig.10 Dynamic Input Characteristic
s
zMeasurement circuit s
F
ig.11 Switching Time Measurement Circuit Fig.12 Switching Waveforms
Fig.13 Gate Charge Measurement Circuit Fig.14 Gate Charge Waveforms
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
90% 90%
10% 10
%
10%
50% 50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
r
t
d(off)
V
GS
I
G(Const)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
